Authors:
H. Hoang, T. Hori, T. Yasuda, T. Kizu, K. Tsukagoshi, T. Nabatame, Bui N.Q. Trinh, A. Fujiwara
Abstract:
In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si-doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs was characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850°C regardless the film thickness. The best ISO TFT showed the value of VT of -5 V, µ of 1.32 cm2/Vs, SS of 1 V/dec, and on/off current ratio about 107 .
Keywords: ISO, Annealing, Thin film transistors, Indium, X-ray scattering, Fabrication, Silicon
Link:
IEEE Xplore Proceedings of 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) (2018) P-12.
DOI: 10.23919/AM-FPD.2018.8437420
