**Publication List**

**Publication list 2005-1990**

Thermal decay of superheated 7×7 islands and supercooled “1×1″ vacancy islands on Si(111),H. Hibino, Y. Watanabe, C.-W. Hu, and I. S. T. Tsong, Phys. Rev. B 72, 245424 (2005). |

Arrangement of Au-Si alloy islands at atomic steps,H. Hibino and Y. Watanabe, Surf. Sci. 588, L233 (2005). |

Growth of twinned epitaxial layers on Si(111)R3xR3-B studied by low-energy electron microscopy,H. Hibino and Y. Watanabe, Jpn. J. Appl. Phys. 44, 358 (2005). |

Ultrahigh vacuum scanning electron microscope system combined with wide-movable scanning tunneling microscope, A. Kaneko, Y. Homma, H. Hibino, and T. Ogino, Rev. Sci. Instrum. 76, 083709 (2005). |

Structural and morphological changes on surfaces with multiple phases studied by low-energy electron microscopy,H. Hibino, Y. Homma, C.-W. Hu, M. Uwaha, T. Ogino, and I. S. T. Tsong, Appl. Surf. Sci. 237, 51 (2004). |

Site-controlled InP nanowires grown on patterned Si substrates, Y. Watanabe, H. Hibino, S. Bhunia, K. Tateno, and T. Skiguchi, Physica E 24, 133 (2004). |

Step wandering induced by homoepitaxy on Si(111) during “1×1″-7×7 phase transition,H. Hibino, Y. Homma, M. Uwaha, and T. Ogino, Surf. Sci. 527, L222 (2003). |

Step wandering due to the gap in diffusion coefficient on the upper and the lower terraces, R. Kato, M. Uwaha, H. Hibino, and Y. Saito, Surf. Sci. 522, 64 (2003). |

A study of mass transport on Si(111) surfaces by low-energy electron microscopy,H. Hibino, C.-W. Hu, T. Ogino, and I. S. T. Tsong, Hyoumen-Kagaku 23, 277 (2002) (in Japanese). |

Ultrafine and well-defined patterns on silicon through reaction selectivity, K. Prabhakaran, H. Hibino, and T. Ogino, Advanced Materials 14, 1418 (2002). |

Design of Si surfaces for self-assembled nano architecture, T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, D. J. Bottomley, F. Ling, and A. Kaneko, Surf. Sci. 514, 1 (2002). |

Growth of Si twinning superlattice,H. Hibino and T. Ogino, Mat. Sci. Eng. B87, 214 (2001). |

Diffusion barrier caused by 1×1 and 7×7 on Si(111) during phase transition,H. Hibino, C.-W. Hu, T. Ogino, and I. S. T. Tsong, Phys. Rev. B 64, 245401 (2001). |

Decay kinetics of two-dimansional islands and holes on Si(111) studied by low-energy electron microscopy,H. Hibino, C.-W. Hu, T. Ogino, and I. S. T. Tsong, Phys. Rev. B 63: 245402 (2001). |

Si twinning superlattice,H. Hibino and T. Ogino, Materia 40, 990 (2001) (in Japanese). |

Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure, J.-F. Nielsen; J. P. Pelz; H. Hibino, C.-W. Hu; I. S. T. Tsong; and J. Kouvetakis, Appl. Phys. Lett. 79, 3857 (2001). |

Enhanced terrace stability for preparation of step-free Si(001)-(2×1) surfaces, J.-F. Nielsen; J. P. Pelz; H. Hibino, C.-W. Hu; and I. S. T. Tsong, Phys. Rev. Lett. 87, 136103 (2001). |

Hysteresis in the (1×1)-(7×7) first-order phase transition on the Si(111) surface, C.-W. Hu, H. Hibino, T. Ogino, and I. S. T. Tsong, Surf. Sci. 487, 191 (2001). |

Si twinning superlattice: growth of new single crystal Si,H. Hibino and T. Ogino, Surf. Rev. Lett. 7, 631 (2000). |

Si twinning superlattice -growth of novel single crystal Si-,H. Hibino and T. Ogino, Kotai-butsuri 35, 259 (2000) (in Japanese). |

Self-organization of steps and domain boundaries of 7×7 reconstruction on Si(111),H. Hibino, Y. Homma, and T. Ogino, Mat. Res. Soc. Symp. Proc. 584, 59 (2000). |

Step bunching during SiGe growth on vicinal Si(111) surfaces,H. Hibino and T. Ogino, Mat. Res. Soc. Symp. Proc. 584, 77 (2000). |

RHEED analysis of twinned homoepitaxial layers grown on Si(111)R3xR3-B,H. Hibino, T. Kawamura, and T. Ogino, Thin Solid Films 369, 5 (2000). |

Observation of incomplete surface melting of Si using medium-energy ion scattering spectroscopy, K. Sumitomo, H. Hibino, Y. Homma, and T. Ogino, Jpn. J. Appl. Phys. 7B, 4421 (2000). |

Dynamics of the silicon (111) surface phase transition, J. B. Hannon, H. Hibino, N. C. Bartelt, B. S. Swartzentruber, T. Ogino, and G. L. Kellogg, Nature (London) 405, 552 (2000). |

Transformation of surface structures on vicinal Si(111) during heating, Y. Homma, H. Hibino, Y. Kunii, and T. Ogino, Surf. Sci.. 445, 327 (2000). |

Transformation of artificial structures on silicon surfaces due to evaporation, Y. Homma, H. Hibino, Y. Kunii, and T. Ogino, Hyomen-kagaku 20, 859 (1999) (in Japanese). |

Kinetics and thermodynamics of surface steps on semiconductors, T. Ogino, H. Hibino, and Y. Homma, Crtical Reviews in Solid State and Materials Sciences 24, 227 (1999). |

Fabrication and integration of nanostructures on Si surfaces, T. Ogino, H. Hibino, Y. Homma, Y. Kobayashi, K. Prabhakaran, K. Sumitomo, and H. Omi, Acc. Chem. Res. 32, 447 (1999). |

Origin of reducing domain boundaries of Si(111)-7×7 during homoepitaxial growth, T. Kawamura, H. Hibino, and T. Ogino, Jpn. J. Appl. Phys. 38, 1530 (1999). |

Sublimation of Si(111) surfaces observed by Ultrahigh vacuum scanning electron microscopy, Y. Homma, H. Hibino, and T. Ogino, Shinku 42, 79 (1999) (in Japanese). |

Disordering of Si(111) at high temperatures,H. Hibino, K. Sumitomo, T. Fukuda, Y. Homma, and T. Ogino, Phys. Rev. B 58, 12587 (1998). |

Triangular-tiled arrangement of 7×7 and ‘1×1′ domains on Si(111),H. Hibino, Y. Homma, and T. Ogino, Phys. Rev. B 58, R7500 (1998). |

Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)R3xR3-B,H. Hibino and T. Ogino, Surf. Sci. 412/413, 132 (1998). |

Twinned epitaxial layers formed on Si(111)R3xR3-B,H. Hibino, K. Sumitomo, and T. Ogino, J. Vac. Sci. Technol. A 16, 1934 (1998). |

Growth process of twinned epitaxial layers on Si(111)R3xR3-B and their thermal stability,H. Hibino, K. Sumitomo, and T. Ogino, Appl. Surf. Sci. 130-132, 41 (1998). |

Sublimation of heavily B-doped Si(111) surface, Y. Homma, H. Hibino, T. Ogino, and N. Aizawa, Phys. Rev. B 58, 13146 (1998). |

Wafer-scale control of nanostructures on Si by using self-organization processes, T. Ogino, Y. Homma, H. Hibino, Y. Kobayashi, K. Sumitomo, K. Prabhakaran, and H. Omi, Hyomen-kagaku 19, 557 (1998) (in Japanese). |

Phase transitions on Si(113): a high-temperature scanning tunneling microscopy study,H. Hibino and T. Ogino, Phys. Rev. B 56, 4092 (1997). |

Substitution of In for Si adatoms and exchanges between In and Si adatoms on a Si(111)-7×7 surface,H. Hibino and T. Ogino, Phys. Rev. B 55, 7018 (1997). |

Control of atomic-step arrangement on Si surfaces, T. Ogino, H. Hibino, and Y. Homma, Oyobutsuri 66, 1289 (1997) (in Japanese). |

Step arrangement design and nanostructure self-organization on Si surfaces, T. Ogino, H. Hibino, and Y. Homma, Appl. Surf. Sci. 117, 642 (1997). |

Sublimation of Si(111) in ultrahigh vacuum, Y. Homma, H. Hibino, T. Ogino, and N. Aizawa, Phys. Rev. B 55, R10237 (1997). |

Exchanges between group-III and Si atoms on Si(111)-R3xR3 surfaces,H. Hibino and T. Ogino, Phys. Rev. B 54, 5763 (1996). |

‘1×1′-to-7×7 phase transition under heating current,H. Hibino, Y. Homma, and T. Ogino, Surf. Sci. 364, L587 (1996). |

Two-stage phase transition of 12×1 reconstruction on Si(331),H. Hibino and T. Ogino, Phys. Rev. B 53, 15682 (1996). |

Phase transition of 12×1 reconstruction on Si(331),H. Hibino and T. Ogino, Surf. Sci. 357-358, 102 (1996). |

Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self-organization processe, T. Ogino, H. Hibino, and K. Prabhakaran, J. Vac. Sci. Technol. B 14, 4134 (1996). |

Step arrangement design and nanostructure self-organization on Si(111) surfaces by patterning-assisted control, T. Ogino, H. Hibino, and Y. Homma, Appl. Surf. Sci. 107, 1 (1996). |

Reducing domain boundaries of surface reconstruction during molecular-beam epitaxy on Si(111),H. Hibino and T. Ogino, Appl. Phys. Lett. 67, 915 (1995). |

Exchanges between Si and Pb adatoms on Si(111),H. Hibino and T. Ogino, Surf. Sci. 328, L547 (1995). |

Real-space observation of (111) facet formation on vicinal Si(111) surfaces,H. Hibino, Y. Homma, and T. Ogino, Phys. Rev. B 51, 7753 (1995). |

Scanning-tunneling-microscopy observations of Ge solid-phase epitaxy on Si(111),H. Hibino and T. Ogino, Hyomenkagaku 16, 113 (1995) (in Japanese). |

Patterning-assisted control for ordered arrangement of atomic steps on Si(111) surfaces, T. Ogino, H. Hibino, and Y. Homma, Jpn. J. Appl. Phys. 34, L668 (1995). |

Direct evidence for Ge prferential growth at steps and out-of-phase boundaries of (7×7) domains on Si(111) in solid phase epitaxy, Y. Homma, N. Aizawa, and H. Hibino, Surf. Sci. 324, L333 (1995). |

Secondary electron imaging of (7×7) domains on Si(111) surfaces, Y. Homma, M. Suzuki, H. Hibino, and N. Aizawa, Hyomenkagaku 16, 415 (1995) (in Japanese). |

Scanning tunneling microscopy observations of Ge solid-phase epitaxy on Si(111),H. Hibino and T. Ogino, Appl. Surf. Sci. 82/83, 374 (1994). |

Periodic arrangement of Ge islands on Si(111),H. Hibino, N. Shimizu, Y. Shinoda, and T. Ogino, Mat. Res. Soc. Symp. Proc. 317, 41 (1994). |

Trace of interface reconstruction in Ge solid-phase epitaxy on Si(111),H. Hibino and T. Ogino, Phys. Rev. B 49, 5765 (1994). |

Transient step buncing on a vicinal Si(111) surface,H. Hibino and T. Ogino, Phys. Rev. Lett. 72, 657 (1994). |

Pb preadsorption facilitates island formation during Ge growth on Si(111),H. Hibino, N. Shimizu, K. Sumitomo, Y. Shinoda, and T. Ogino, J. Vac. Sci. Technol. A12, 23 (1994). |

Mesh pattern of Ge islands grown using solid phase epitaxy,H. Hibino, N. Shimizu, and Y. Shinoda, J. Vac. Sci. Technol. A11, 2358 (1993). |

High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surface,H. Hibino, T. Fukuda, M. Suzuki, Y. Homma, T. Sato, M. Iwatsuki, K. Miki, and H. Tokumoto, Phys. Rev. B 47, 13027 (1993). |

Initial growth stages of Ge on Si(111), Y. Shinoda, Y. Kobayashi, H. Hibino, and K. Sugii, Hyomenkagaku 14, 105 (1993) (in Japanese). |

Real-time observation of (1×1)-(7×7) phase transition on vicinal Si(111) surfaces by scanning tunneling microscopy, >M. Suzuki, H. Hibino, Y. Homma, T. Fukuda, T. Sato, M. Iwatsuki, K. Miki, and H. Tokumoto, Jpn. J. Appl. Phys. 32, 3247 (1993). |

Real-time scanning tunneling microscopy of (1×1)-(7×7) phase transition on a vicinal Si(111) surface, M. Suzuki, Y. Homma, H. Hibino, T. Fukuda, T. Sato, M. Iwatsuki, K. Miki, and H. Tokumoto, J. Vac. Sci. Technol. A11, 1640 (1993). |

Step band structures on vicinal Si(111) surfaces created by DC resistive heating, Y. Homma, M. Suzuki, and H. Hibino, Appl. Surf. Sci. 60/61, 460 (1992). |

Surface structural changes during the initial growth of Ge on Si(111)7×7, Y. Shinoda, N. Shimizu, H. Hibino, T. Nishioka, C. Heimlich, Y. Kobayashi, S. Ishizawa, K. Sugii, and M. Seki, Appl. Surf. Sci. 60/61, 112 (1992). |

TEM moire pattern and scanning Auger electron microscope analysis of anomalous Si incorporation into MBE-grown Ge on Si(111), K. Sugii, S. Ishizawa, Y. Kobayashi, H. Hibino, and M. Seki, Jpn. J. Appl. Phys. 31, 3296 (1992). |

Reflection high-energy electron diffraction studies of vicinal Si(111) surfaces,H. Hibino, Y. Shinoda, Y. Kobayashi, and K. Sugii, Jpn. J. Appl. Phys. 30, 1337 (1991). |

RHEED studies on vicinal Si(111), (100) surfaces,H. Hibino, Y. Shinoda, Y. Kobayashi, and K. Sugii, Hyomenkagaku 11, 500 (1990) (in Japanese). |

DC-resistive-heating-induced step bunching on vicinal Si(111), Y. Homma, R. J. McClelland, and H. Hibino, Jpn. J. Appl. Phys. 29, L2254 (1990). |