Invited talk list

02/17/2016

List of invited talks at international conferences

H. Hibino, K. Ogawa, T. Suzuki, H. Kageshima, S. Uemura, D. Dojima, T. Kaneko, and Y. Ozaki, “Tip-enhanced Raman spectroscopy imaging of two-dimensional materials,” 6th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2017), Como, Italy (Sep. 2017).
H. Hibino, “Structural analysis of 2D materials and heterostructures using low-energy electron microscopy and diffraction,” 7th International Symposium on Practical Surface Analysis (PSA-16), Daejeon, South Korea (Oct. 2016).
H. Hibino, “Structural analysis of heterostructures of 2D materials by low-energy electron microscopy and diffraction,” 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Aichi, Japan (Aug. 2016).
H. Hibino, “Growth and low-energy electron microscopy characterizations of graphene and hexagonal boron nitride,” 16th International Summer School on Crystal Growth (ISSCG-16), Lake Biwa, Shiga, Japan (Aug. 2016).
H. Hibino, “Low-energy electron microscopy of 2D materials and their heterostructures,” 5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2015), Hsinchu, Taiwan (Sep. 2015).
H. Hibino, S. Wang, C. M. Orofeo and S. Suzuki, “Synthesis and Functionalization of Two-Dimensional Materials,” 22nd International Workshop on Active-Matrix Flatpanel Displays -TFT Technologies and FPD Materials- (AM-FPD’15), Kyoto, Japan (Jul. 2015).
H. Hibino, S. Wang, C. M. Orofeo and S. Suzuki, “Growth, characterization, and functionalization of graphene and hexagonal boron nitride,” International Conference on Solid State Devices and Materials (SSDM2014), Tsukuba, Japan (Sep. 2014).
H. Hibino, “Low-energy electron microscopy of graphene and hexagonal boron nitride,” The International Union of Materials Research Societies IUMRS International Conference in Asia (IUMRS-ICA 2014), Fukuoka, Japan (Aug. 2014).
H. Hibino, C. M. Orofeo, and S. Suzuki, “Fabrication and characterization of BN/graphene heterostructures,” 9th International Symposium on Atomic Level Characterizations for New Materials and Devices ’13 (ALC’13), Hawaii, U.S.A. (Dec. 2013).
H. Hibino, S. Tanabe, M. Takamura, and Y. Murata, “Electrical transport properties and nanostructure self-organization of quasi-freestanding graphene on SiC,” Recent Progress in Graphene Research (RPGR2013), Tokyo, Japan (Sep. 2013).
F. Maeda and H. Hibino, “Growth of graphene by molecular beam epitaxy using cracked ethanol and ethylene,” PDI Topical Workshop on MBE-Grown Graphene 2013, Berlin, Germany (Sep. 2013).
K. Furukawa and H. Hibino, “AFM Study of Collision of Self-spreading Lipid Bilayers within Micro Pattern,” 20th International Colloquium on Scanning Probe Microscopy, Naha, Japan (Dec. 2012).
Y. Ueno, K. Furukawa, K. Matsuo, K. Hayashi, S. Inoue, H. Hibino, E. Tamechika,, “Aptamer Modified Graphene Oxide Installed in a Microchannel Device: A New Lab-on-a-chip Protein Detection System,” 6th International Symposium on Nanomedicine (ISNM2012), Matsue, Japan (Nov.-Dec. 2012).
H. Hibino, S. Tanabe, and H. Kageshima, “Carrier transport in epitaxial and quasi-freestanding graphene on SiC,” International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM2012), Yokohama, Japan (Sep. 2012).
H. Hibino, S. Tanabe, and H. Kageshima, “Carrier transport in epitaxial graphene grown on SiC(0001),” 3rd International Symposium on the Science and Technology of Epitaxial Graphene (STEG3), Saint Augustine, U.S.A. (Oct. 2011).
H. Ago, C. M. Orofeo, Y. Ogawa, B. Hu, Y. Ito, K. Kawahara, M. Tsuji, K. Ikeda, S. Mizuno, and H. Hibino, “CVD Growth of Epitaxial Graphene and Influence of Domain Structure on Transport Property,” 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Japan (Sep. 2011).
H. Hibino, S. Tanabe, and H. Kageshima, “Growth and electronic transport properties of monolayer and bilayer graphene on SiC,” XX International Material Research Congress 2011 (IMRC 2011), Cancun, Mexico (Aug. 2011).
H. Hibino, “Dynamics of Si surface morphology,” A minisemester on evolution of interfaces, Sapporo, Japan (Jul. 2011).
H. Hibino, S. Tanabe, and H. Kageshima, “Growth, structure, and transport properties of epitaxial graphene on SiC,” 8th International Symposium on Atomic Level Characterizations for New Materials and Devices ’11 (ALC’11), Seoul, Korea (May 2011).
H. Hibino, S. Tanabe, and H. Kageshima, “Growth and characterization of graphene on SiC,” Graphene Workshop in Tsukuba 2011, Tsukuba, Japan (Jan. 2011).
H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, “Theoretical study on growth, structure, and physical properties of graphene on SiC,” Japan-Korea Symposium on Surface and Nanostructure 9th (JKSSN9), Sendai, Japan (Nov. 2010).
H. Hibino, H. Kageshima, S. Tanabe, and M. Nagase, “Growth, structure, and transport properties of epitaxial graphene on SiC,” International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD 2010), Sendai, Japan (Oct. 2010).
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, “Electrical contact properties of few-layer epitaxial on SiC substrate,” International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD 2010), Sendai, Japan (Oct. 2010).
H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, “Theoretical study on functions of graphene,” International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD 2010), Sendai, Japan (Oct. 2010).
H. Hibino, “Surface electron microscopy of epitaxial graphene,” 2nd International Symposium on the Science and Technology of Epitaxial Graphene, Amelia Island, U.S.A. (Sep. 2010).
H. Hibino, “Dynamics of Si surface morphology/Epitaxial graphene growth on SiC surfaces,” The 14th International Summer School on Crystal Growth (ISSCG-14), Dalian, China (Aug. 2010).
H. Hibino, H. Kageshima, and M. Nagase, “In-situ surface electron microscopy observations of growth and etching of epitaxial few-layer graphene on SiC,” International Workshop on in situ characterization of near surface processes 2010, Eisenerz, Austria (May 2010).
H. Hibino, H. Kageshima, and M. Nagase, “Microscopic evaluations of structure and electronic properties of epitaxial graphene,” 7th International Symposium on Atomic Level Characterizations for New Materials and Devices, Hawaii, U.S.A. (Dec. 2009).
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, “Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe,” 17th Int. Colloquium on Scanning Probe Microscopy (ICSPM17), Izu, Japan (Dec. 2009).
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, “Microscopic characterization of few-layer graphene on SiC,” Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN2009), Hawaii, USA (Nov. 2009).
H. Hibino, H. Kageshima, and M. Nagase, “Structure and electronic properties of epitaxial graphene grown on SiC studied by surface electron microscopy,” 22nd International Microprocesses and Nanotechnology Conference, Sapporo, Japan (Nov. 2009).
H. Hibino, H. Kageshima, M. Kotsugi, and Y. Watanabe, “Local work function measurements of epitaxial few-layer graphene,” 5th International Symposium on Surface Science and Nanotechnology, Tokyo, Japan (Nov. 2008).
H. Kageshima, H. Hibino, and M. Nagase, “Epitaxial graphene growth using LEEM and first-principles,” 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009), Nürnberg, Germany, (Oct. 2009).
H. Hibino, “Number-of-layers dependence of electronic properties of epitaxial graphene investigated by SPELEEM,” 5th International Workshop on Nanoscale Spectroscopy and Nanotechnology, Athens, U.S.A. (Jul. 2008).
H. Hibino, Y. Homma, C.-W. Hu, M. Uwaha, T. Ogino, and I. S. T. Tsong, “Structural and morphological changes on surface with multiple phases studied by low-energy electron microscopy,” 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan (Nov. 2003).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi and Z. Zhang, “Strain engineering for control of Ge quantum nanostructures on Si surfaces,” The 10th international Colloquium on SPM, Waikiki, USA (Oct. 2002).
T. Ogino, Y. Homma, Y. Kobayashi and H. Hibino, “Atomic-structure and strain engineering for control of self-organized Ge quantum nanostructures,” E-MRS, Strasbourg, France (Jun. 2002).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo and H. Omi, “Control of nanostructure self-assembly by atomic-structure and strain engineering,” IUVSTA Workshop, Trofaiach, Austria (Jun. 2002).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, A. Kaneko and F. Lin, “Integration of semiconductor nanostructures and interconnections of future self-assembled nanoarchitecture,” Electorochemical Society Spring Meeting 2002, Philadelphia, USA (May 2002).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, F. Lin, and A. Kaneko, “Integration of semiconductor nanostructures and interconnections for future self-assembled nano-architechture,” Nanoarchitectonics Using Suprainteractions, Los Angels, USA (Mar. 2002).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, F. Lin, and A. Kaneko, “Bottom-up approach for future Si integration technology,” Flip Chip & Chip Scale Europa 2002, Bueblingen, Germany (Mar. 2002).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, A. Kaneko, and F. Ling, “Atomic-structure and strain engineering for control of self-organized Ge quantum nanostructures on Si surfaces,” Dr. Rohrer’s JSPS Award Workshop (International Workshop at IMR Tohoku University), Sendai, Japan (Mar. 2002).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, D. Bottomley, F. Lin, and A. Kaneko, “Design and functionalization of Si surfaces for self-assembled nano-architechture,” Yamada Conference LVII, Atomic-Scale Surface Designing for Functional Low-Dimensional Materials, Tsukuba, Japan (Nov. 2001).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, D. Bottomley, F. Lin, Z. H. Zhang, and A. Kaneko, “Atomic structure control on Si surfaces and its application to nanofabrication,” International Workshop on Atomic-Scale Surface Dynamics of Advanced Materials, Izunagaoka, Japan (Nov. 2001).
H. Hibino and T. Ogino, “Epitaxial growth of Si twinnig superlattice,” 6th International Symposium on Advanced Physics Field-Growth of Well-Defined Nanostructures (APF-6), Tsukuba, Japan (Mar. 2001).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, D. Bottomley, and Zhaohui Zhang, “Self-assembly process for quantum structures on Si wafers,” 6th International Symposium on Advanced Physics Field-Growth of Well-Defined Nanostructures (APF-6), Tsukuba, Japan (Mar. 2001).
H. Hibino and T. Ogino, “Growth of Si twinning superlattice,” Lawrence Symposium on Critical Issues in Expitaxy, Scottsdale, USA (Jan. 2001).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, and Zhaohui Zhang, “Si surface design for nanostructure self-assembly,” Symposium on Surface Science, 2001 (3S’01), Furano, Japan (Jan. 2001).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, and Zhaohui Zhang, “Bottom-up approach for nanointegration,” Nanoarchitectonics using Suprainteraction (NASI1), Tsukuba, Japan (Nov. 2000).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, and Zhaohui Zhang, “Control of Si surface for quantum-dot network devices,” 4th International Workshop on Quantum Functional devices (QFD2000), Kanazawa, Japan (Nov. 2000) .
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, and Zhaohui Zhang, “Control of atomic structures on Si surfaces for wafer-scale nanointegration,” International Symposium on Advanced Science and Technology of Si Materials, Kona, USA (Nov. 2000).
H. Hibino and T. Ogino, “Si twinning superlattice: Growth of new single crystal Si,” US-Japan seminar on Mesoscopic Phenomena on Surfaces, Park city, USA (Apr. 2000).
T. Ogino, Y. Homma, H. Hibino, Y. Kobayashi, K. Prabhakaran, K. Sumitomo, H. Omi, and P. Finnie, “Control of Si surfaces for fabrication of integrated functional nanostructures,” American Chemical Society National Meeting (ACS), San Francisco, USA (Mar. 2000).
H. Hibino, Y. Homma, and T. Ogino, “Self-organization of steps and domain boundaries of 7×7 reconstruction on Si (111),” The 1999 Fall Meeting of the Materials Research Society (1999 MRS Fall Meeting), Boston, USA (Nov. 1999).
T. Ogino, H. Hibino, Y. Homma, Y. Kobayashi, K. Prabhakaran, K. Sumitomo, H. Omi, and P. Finnie, “Nano-integration and novel material growth through Si surface structure control,” First Workshop on Advanced Material (IUPAC), Hong Kong, China (Jul. 1999).
T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, and P. Finnie, “Control of atomic level structures on a wafer scale,” 5th International Conference on Atomically Controlled Surfaces Interfaces and Nanostructures (ACSIN-5), Aix en Provence, France (Jul. 1999).
T. Ogino, Y. Homma, H. Hibino, Y. Kunii, and H. Omi, “Atomic-step-networks for nanopatterning on Si surfaces,” International Microprocesses and Nanotechnology Conference, 1998 (MNC’98), Kyoungju, Korea (Jul. 1998).
T. Ogino, H. Hibino, and Y. Homma, “Step Arrangement Design and Nanostructure Self-organization on Si Surfaces,” Second International Symposium on Control of Semiconductor Interfaces, Karuizawa (Oct.-Nov. 1996).
T. Ogino, H. Hibino, and K. Prabhakaran, “Fabrication of Nanostructures on Si Surfaces on a Wafer Scale by Controlling Self-Organization Processes,” The 40th Int. Conf. on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN) 1996, Atlanta (May 1996).

 

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