論文リスト
論文リスト 2010
| Growth and characterization of epitaxial graphene on SiC, H. Hibino, H. Kageshima, S. Tanabe, M. Nagase, and S. Mizuno, Kotai-Butsuri 45, 645 (2010) (in Japanese). |
| Theoretical study of epitaxial graphene growth on SiC, H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, J. of the Jpn. Association for Crystal Growth 37, 190 (2010) (in Japanese). |
| Atomic structure and physical properties of epitaxial graphene islands embedded in SiC(0001) surfaces, H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, Appl. Phys. Express 3, 115103 (2010). |
| Epitaxial few-layer graphene: toward single crystal growth, H. Hibino, S. Tanabe, and H. Kageshima, NEW DIAMOND 99, 23 (2010) (in Japanese). |
| Epitaxial few-layer graphene: toward single crystal growth, H. Hibino, H. Kageshima, and M. Nagase, J. Phys. D: Appl. Phys. 43, 374005 (2010). |
| Graphene growth on silicon carbide, H. Hibino, H. Kageshima, and M. Nagase, NTT Technical Review Vol. 8, No. 8 (2010). |
| Graphene growth on silicon carbide, H. Hibino, H. Kageshima, and M. Nagase, NTT Gijutsu Journal 22(6), 18 (2010) (in Japanece). |
| Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices, S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Appl. Phys. Express 3, 075102 (2010). |
| Contact conductance measurement of locally suspended graphene on SiC, M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, Appl. Phys. Express 3, 045101 (2010). |
| Analysis of number of layers in epitaxial few-layer graphene grown on SiC towards single-crystal graphene substrate, H. Hibino, H. Kageshima, and M. Nagase, J. Vac. Soc. Jpn. 53, 101 (2010) (in Japanese). |
| Epitaxial graphene growth studied by low-energy electron microscopy and first-principles, H. Kageshima, H. Hibino, and M. Nagase, Mater. Sci. Forum 645-648, 597 (2010). |
| Thin graphitic structure formation on various substrates by gas-source molecular beam epitaxy using cracked-ethanol, F. Maeda and H. Hibino, Jpn. J. Appl. Phys.49, 04DH13 (2010). |
| Growth of few-layer graphene by gas-source molecular beam epitaxy using cracked ethanol, F. Maeda and H. Hibino, Phys. Stat. Solidi B 247, 916 (2010). |
| Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces, S. Tanaka, K. Morita, and H. Hibino, Phys. Rev. B 81, 041406(R) (2010). |
