Publication list 2010

05/01/2015

論文リスト

 

論文リスト 2010

Growth and characterization of epitaxial graphene on SiC,
H. Hibino, H. Kageshima, S. Tanabe, M. Nagase, and S. Mizuno, Kotai-Butsuri 45, 645 (2010) (in Japanese).
Theoretical study of epitaxial graphene growth on SiC,
H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, J. of the Jpn. Association for Crystal Growth 37, 190 (2010) (in Japanese).
Atomic structure and physical properties of epitaxial graphene islands embedded in SiC(0001) surfaces,
H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, Appl. Phys. Express 3, 115103 (2010).
Epitaxial few-layer graphene: toward single crystal growth,
H. Hibino, S. Tanabe, and H. Kageshima, NEW DIAMOND 99, 23 (2010) (in Japanese).
Epitaxial few-layer graphene: toward single crystal growth,
H. Hibino, H. Kageshima, and M. Nagase, J. Phys. D: Appl. Phys. 43, 374005 (2010).
Graphene growth on silicon carbide,
H. Hibino, H. Kageshima, and M. Nagase, NTT Technical Review Vol. 8, No. 8 (2010).
Graphene growth on silicon carbide,
H. Hibino, H. Kageshima, and M. Nagase, NTT Gijutsu Journal 22(6), 18 (2010) (in Japanece).
Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices,
S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Appl. Phys. Express 3, 075102 (2010).
Contact conductance measurement of locally suspended graphene on SiC,
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, Appl. Phys. Express 3, 045101 (2010).
Analysis of number of layers in epitaxial few-layer graphene grown on SiC towards single-crystal graphene substrate,
H. Hibino, H. Kageshima, and M. Nagase, J. Vac. Soc. Jpn. 53, 101 (2010) (in Japanese).
Epitaxial graphene growth studied by low-energy electron microscopy and first-principles,
H. Kageshima, H. Hibino, and M. Nagase, Mater. Sci. Forum 645-648, 597 (2010).
Thin graphitic structure formation on various substrates by gas-source molecular beam epitaxy using cracked-ethanol,
F. Maeda and H. Hibino, Jpn. J. Appl. Phys.49, 04DH13 (2010).
Growth of few-layer graphene by gas-source molecular beam epitaxy using cracked ethanol,
F. Maeda and H. Hibino, Phys. Stat. Solidi B 247, 916 (2010).
Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces,
S. Tanaka, K. Morita, and H. Hibino, Phys. Rev. B 81, 041406(R) (2010).

 

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