Y. Inoue, W. Tochizaki, T. Iwai, K. Tanabe, and N. Ohtani, "Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals," Materials Science in Semiconductor Processing 176, 108266 (2024): https://doi.org/10.1016/j.mssp.2024.108266

T. Ota, S. Asano, Y. Inoue, and N. Ohtani, "Experimental and simulation studies of surface segregation-limited nitrogen incorporation at the growth front of physical vapor transport-grown 4H-SiC crystals," Journal of Applied Physics 134, 045702 (2023): https://doi.org/10.1063/5.0156457

M. Yodo, A. Nakai, S. Tamura, and N. Ohtani, "Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals," Journal of Crystal Growth 597, 126856 (2022): https://doi.org/10.1016/j.jcrysgro.2022.126856

T. Hashiguchi, T. Ota, S. Asano, and N. Ohtani, "Enhanced nitrogen incorporation in the <11−20> directions on the (000−1) facet of 4HSiC crystals," Japanese Journal of Applied Physics 61, 095501 (2022): https://doi.org/10.35848/1347-4065/ac829c

A new book on wide bandgap power semiconductor materials and devices has been published from Wiley-VCH. The book was edited by Prof. N. Ohtani together with Prof. Peter Wellmann of University of Erlangen-Nürnberg and Dr. Roland Rupp of Infineon Technologies, Germany: https://onlinelibrary.wiley.com/doi/book/10.1002/9783527824724

H. Shinya, M. Nakano, and N. Ohtani, "Undulated Step Structure on the (000−1) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals," Materials 14, 6816 (2021): https://doi.org/10.3390/ma14226816

T. Izawa, H. Okano, S. Morita, and N. Ohtani, "Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers," Journal of Applied Physics 130, 095702 (2021): https://doi.org/10.1063/5.0057627

K. Yokomoto, M. Yabu, T. Hashiguchi, and N. Ohtani, "Correlation between the step–terrace structure and the nitrogen doping variation observed on the (000−1) facet of 4H-SiC crystals," Journal of Applied Physics 128, 135701 (2020): https://aip.scitation.org/doi/full/10.1063/5.0009784

N. Shinagawa, T. Izawa, M. Manabe, T. Yamochi, and N. Ohtani, "Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography," Japanese Journal of Applied Physics 59, 091002 (2020): https://doi.org/10.35848/1347-4065/abab46

K. Shimada, K. Asada, M. Yodo, and N. Ohtani, "Raman scattering microscopy imaging of basal plane stacking faults and associated partial dislocations in 4H-SiC crystals," Journal of Applied Physics 127, 165704 (2020): https://doi.org/10.1063/5.0007219 (Featured Article)

K. Yokomoto, K. Shioura, M. Yabu, M. Nakano, and N. Ohtani, "Novel characterization method for the nitrogen doping concentration in heavily nitrogen-doped 4H-SiC crystals by Raman scattering microscopy," Japanese Journal of Applied Physics 59, 051003 (2020): https://doi.org/10.35848/1347-4065/ab8758

T. Nakano, N. Shinagawa, M. Yabu, and N. Ohtani, "Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals," Journal of Crystal Growth 516, 51 (2019): https://doi.org/10.1016/j.jcrysgro.2019.03.027

K. Shioura, N. Shinagawa, T. Izawa, and N. Ohtani, "Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography," Journal of Crystal Growth 515, 58 (2019): https://doi.org/10.1016/j.jcrysgro.2019.03.015

Y. Mannen, K. Shimada, K. Asada, and N. Ohtani, "Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions," Journal of Applied Physics 125, 085705 (2019): https://doi.org/10.1063/1.5074150

A new book chapter on SiC bulk crystal growth has been published from Elsevier. The chapter was co-authored by Prof. N. Ohtani and Prof. Didier Chaussende of University of Grenoble Alpes, France: https://www.elsevier.com/books/single-crystals-of-electronic-materials/fornari/978-0-08-102096-8

M. Sonoda, T. Nakano, K. Shioura, N. Shinagawa, and N. Ohtani, "Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography," Journal of Crystal Growth 499, 24 (2018): https://doi.org/10.1016/j.jcrysgro.2018.07.029

Y. Mannen, K. Shimada, C. Taniguchi, and N. Ohtani, "Stability of multiple Shockley type basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals," Journal of Crystal Growth 498, 328 (2018): https://doi.org/10.1016/j.jcrysgro.2018.06.029

N. Matsumoto, H. Shinya, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, H. Tsuge, S. Sato, and T. Fujimoto, "Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals," Materials Science Forum 924, 19 (2018): https://doi.org/10.4028/www.scientific.net/MSF.924.19

M. Sonoda, K. Shioura, T. Nakano, N. Ohtani, M. Katsuno, H. Tsuge, S. Sato, and T. Fujimoto, "Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method," Materials Science Forum 924, 15 (2018): https://doi.org/10.4028/www.scientific.net/MSF.924.15

K. Okawa, Y. Mannen, K. Shioura, N. Ohtani, M. Katsuno, H. Tsuge, S. Sato, and T. Fujimoto, "Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals," Materials Science Forum 924, 293 (2018): https://doi.org/10.4028/www.scientific.net/MSF.924.293

K. Ohtomo, N. Matsumoto, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge, and T. Fujimoto, "Formation of basal plane stacking faults on the (000-1) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth," Journal of Crystal Growth 478, 174 (2017): https://doi.org/10.1016/j.jcrysgro.2017.09.008

Y. Tabuchi, K. Ashida, M. Sonoda, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge, and T. Fujimoto, "Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface," Journal of Applied Physics 122, 075702 (2017): http://dx.doi.org/10.1063/1.4999480

D. Fukunaga, N. Ohtani, M. Katsuno, H. Tsuge, S. Sato, and T. Fujimoto, "Micro-Raman scattering study of strain fields in homo-epitaxial layer on nitrogen-doped 4H-SiC substrate," Materials Science Forum 897, 283 (2017): http:/www.scientific.net/MSF.897.283

Y. Tabuchi, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, H. Tsuge, S. Sato, and T. Fujimoto, "SEM and ECC imaging study of step-bunched structure on 4H-SiC epitaxial layers," Materials Science Forum 897, 205 (2017): http://www.scientific.net/MSF.897.205

K. Ohtomo, N. Matsumoto, N. Ohtani, M. Katsuno, H. Tsuge, S. Sato, and T. Fujimoto, "Investigation of the surface morphology and stacking fault nucleation on the (000-1)C facet of heavily nitrogen-doped 4H-SiC boules," Materials Science Forum 897, 189 (2017): http://www.scientific.net/MSF.897.189

C. Taniguchi, A. Ichimura, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, and T. Yano, "Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals," Journal of Applied Physics 119, 145704 (2016): http://dx.doi.org/10.1063/1.4945773

Y. Teramoto, Y. Tabuchi, D. Fukunaga, K. Ohtomo, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, and T. Yano, "Characterization of lattice plane bending and stress distribution in physical vapor transport-grown 4H-SiC crystals," Materials Science Forum 858, 53 (2016): http://www.scientific.net/MSF.858.53

C. Taniguchi, A. Ichimura, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, and T. Yano, "Temperature-dependent stability of stacking faults in heavily nitrogen-doped 4H-SiC crystals," Materials Science Forum 858, 109 (2016): http://www.scientific.net/MSF.858.109

T. Yamaguchi, K. Ohtomo, Shunsuke Sato, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge, and T. Yano, "Surface morphology and step instability on the (000-1)C facet of physical vapor transport-grown 4H-SiC single crystal boules," Journal of Crystal Growth 431, 24 (2015): https://doi.org/10.1016/j.jcrysgro.2015.09.002

T. Takahashi, C. Ohshige, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, T. Yano, H. Matsuhata, and M. Kitabatake, "Structural and electrical characterization of the initial stage of physical vapor transport growth of 4H-SiC crystals," Materials Science Forum 821-823, 90 (2015): http://www.scientific.net/MSF.821-823.90

T. Yamaguchi, Shunsuke Sato, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge, and T. Yano, "Observation of the surface morphology on the (000-1)C facet of 4H-SiC boules," Materials Science Forum 821-823, 64 (2015): http://www.scientific.net/MSF.821-823.64

C. Ohshige, T. Takahashi, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, T. Yano, H. Matsuhata, and M. Kitabatake, "Defect formation during the initial stage of physical vapor transport growth of 4H-SiC in the [110] direction," Journal of Crystal Growth 408, 1 (2014): https://doi.org/10.1016/j.jcrysgro.2014.09.012

N. Ohtani, C. Ohshige, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, W. Ohashi, T. Yano, H. Matsuhata, and M. Kitabatake, "Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals," Journal of Crystal Growth 386, 9 (2014): https://doi.org/10.1016/j.jcrysgro.2013.09.026