Defect physics in SiC power semiconductor crystals, leading to energy saving

Solving the problem of climate change is a great challenge before us, and energy conservation combined with a more efficient use of electricity can mitigate the problem since it is the most widely used energy source at home and in industry. Hence, power electronics is now expected to play a vital role in the global energy conservation scenario. Present-day Si power electronics, however, suffer from performance limitations due to their material properties. Wide band gap semiconductor silicon carbide (SiC) is a possible solution to this problem and has attracted considerable attention in recent years. In our laboratories, we pursue research topics related to semiconductor SiC together with several industrial partners. Our current research focuses on crystal growth and defect physics in SiC crystals. The research topics include studies of the following: the formation mechanisms of structural defects in SiC single crystals; the growth surface morphology of SiC crystals; the structural and surface defects in SiC epitaxial films and their influence on electrical properties of SiC power devices.