Title:
Fabrication and Characterization of Thin-Film ZnO/Cu-O Heterostructure Prepared by Spin Coating Technique

Authors:
K. Nakata, K. Hirabayashi, A. Fujiwara

Abstract:
Oxide semiconductors are promising materials for electronic devices because of their low
cost, earth abundance and good optical properties. Silicon-based solar cells have been common but
there are concerns about cost and conversion efficiency. To overcome the problems, Cu-O based solar
cell must be developed. In this work, ZnO/CuO and ZnO/Cu2O heterojunction on indium tin oxide
(ITO) coated glass substrates, glass/ITO, were deposited via spin-coating technique. Spin-coated Cu-
O films were annealed at varied range of temperatures, time, and atmosphere to find out the optimal
condition. X-ray diffraction (XRD) studies for the structural characterization of the thin films
revealed that the optimal condition for Cu2O films was at annealed temperature of 400 °C for 1.5
hours under N2 atmosphere, while that of CuO films was at that of 550 °C for 30 minutes under
ambient atmosphere. From the results, we concluded that Cu2O and CuO on glass/ITO/ZnO can be
selectively fabricated by controlling fabrication conditions.

Link:
Materials Science Forum 1055 (2022) 13–17.
DOI: 10.4028/p-6tqfz2