Title:
Elimination of Oxygen Defects in In-Si-O Film and Thin Film Transistor Performance

Authors:
E. K. Palupi, A. Fujiwara

Abstract:
Effect of storage in air on silicon doped indium oxide (In-Si-O) thin-film transistors fabricated via solution processing has been investigated. The on/off ratio drastically increased from 10¹ just after fabrication to 10⁵ on the 10-day storage, whereas the mobility slightly decreased from 1.4 cm²/Vs to 0.38 cm²/Vs. Time constant of aging effect was 3.6 days. The behavior suggests that oxygen defects in In-Si-O films, which may be produced during thermal evaporation of Al electrodes under high vacuum, are eliminated.

Link:
Solid State Phenomena 324 (2021) 81–86.
DOI: 10.4028/www.scientific.net/SSP.324.81