Title:
Silicon-doped indium oxide – a promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method

Authors:
H. Hoang, K. Sasaki, T. Hori, K. Tsukagoshi, T. Nabatame, Bui N.Q. Trinh, A. Fujiwara

Abstract:
Silicon-doped indium oxide (In-Si-O or ISO) has been investigated as the channel material of thin-film transistor (TFT) for the application of next generation flat panel displays. Because solution processing is simple, low cost and low power consumption in comparison with physical vapour deposition, it is a potential candidate for TFTs fabrication. We have been exploring research on TFT using ISO system via spin coating method. In this work, the performance of 3 at.% Si-doped indium oxide TFT has been improved with the highest mobility of 3.8 cm²/Vs without the passivation layer.

Link (OPEN ACCESS):
IOP Conf. Ser.: Mater. Sci. Eng. 625 (2019) 012002-1 – 012002-5.
DOI: 10.1088/1757-899X/625/1/012002