Strain-Controlled Spin Transition in Heterostructured Metal−Organic Framework Thin Film



Strain-Controlled Spin Transition in Heterostructured Metal−Organic Framework Thin Film


T. Haraguchi, K. Otsubo, O. Sakata, A. Fujiwara, H. Kitagawa


Metal−organic framework (MOF) thin films have recently attracted much attention as a new platform for surface/interface research, where unconventional structural and physical properties emerge. Among the many MOFs as candidates for fabrication of thin films, Hofmann-type MOFs {Fe(pz)[M(CN)4]} [pz = pyrazine; M = Ni (Nipz), M = Pt (Ptpz)] are attractive, because they undergo spin transitions with concomitant structural changes. Here, we demonstrate the first example of a strain-controlled spin transition in heterostructured MOF thin films. The spin transition temperature of Ptpz can be controlled in the temperature range of 300−380 K by fabricating a nanometer-sized heterostructured thin film with a Nipz buffer layer, where the smaller lattice of Nipz causes epitaxial compressive strain to the Ptpz layer. The fabricated heterostructured thin film exhibited a remarkable increase in spin transition temperature with a dynamic structural transformation, confirmed by variable-temperature (VT) X-ray diffraction and VT Raman spectroscopy. By verifying interfacial strain in a heterostructured thin film, we can rationally control the characteristics of MOFs−not only spin transition but also various physical properties such as gas storage, catalysis, sensing, proton conductivity, and electrical properties, among others.


J. Am. Chem. Soc. 143 (2021) 16128–16135.
DOI: 10.1021/jacs.1c06662

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