For selecting better dopants into an amorphous oxide semiconductor

A paper on amorphous oxide semiconductors by collaboration with Dr. Tsukagoshi Group (NIMS, MANA, Japan), entitled

“Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants”
has been published in Appl. Phys. Lett.