Authors:
T. Kizu, S. Aikawa, T. Nabatame, A. Fujiwara, K. Ito, M. Takahashi, K. Tsukagoshi

Abstract:
We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm2/V s) and normallyoff characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (VO) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO
TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense VO in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration
in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

Link:
J. Appl. Phys. 120 (2016) 045702.
DOI: 10.1063/1.4959822