Publication list

カテゴリ:未分類 

04/02/2023

Articles

  1. G. Zhang, K. Tateno, S. Sasaki, T. Tawara, H. Hibino, H. Gotoh, and H. Sanada,
    Improving optoelectronic properties of InP/InAs nanowire p-i-n devices with telecom-band electroluminescence,
    Opt. Contin. 2, 176 (2024).
  2. Y. Kawai, T. Nakao. T. Oda, N. Ohtani, and H. Hibino,
    Influence of substrate sapphire orientation on direct CVD growth of graphene,
    Jpn. J. Appl. Phys. 62, 085503 (2023).
  3. R. Sakakibara, J. Bao, N. Hayashi, T. Ito, H. Hibino, and W. Norimatsu,
    Control of rotation angles of multilayer graphene on SiC (000-1) by substrate off-direction and angle,
    J. Phys.: Condens. Matter 35, 385001 (2023).
  4. Y. Sekine, K. Oguri, H. Hibino, H. Kageshima, and Y. Taniyasu,
    Polarized Raman scattering spectroscopy of array of embedded graphene ribbons grown on 4H-SiC(0001),
    Appl. Phys. Express 16, 065001 (2023).
  5. H. Hibino and H. Kageshima,
    Carbonization-driven motion of Si islands on epitaxial graphene,
    Phys. Rev. Mater. 7, 054003 (2023).
  6. H. Kageshima, S. Wang, and H. Hibino,
    Theoretical study on origin of CVD growth direction difference in graphene/hBN heterostructures,
    e-J. Surf. Sci. Nanotechnol. 21, 251 (2023).
  7. F. Maeda, M. Takamura, and H. Hibino,
    Core-level photoelectron spectroscopy study on the buffer-layer formed in approximately atmospheric pressure argon on n-type and semi-insulating SiC(0001) ,
    Surf. Sci. 733, 122292 (2023).
  8. Y. Hsin, P. Solís-Fernández, H. Hibino, and H. Ago,
    Surface etching and edge control of hexagonal boron nitride assisted by triangular Sn nanoplates,
    Nanoscale Adv. 4, 3786 (2022).
  9. K. Sato, N. Hayashi, T. Ito, N. Masago, M. Takamura, M. Morimoto, T. Maekawa, D. Lee, K. Qiao, J. Kim, K. Nakagahara, K. Wakabayashi, H. Hibino, and W. Norimatsu,
    Observation of a flat band and bandgap in millimeter-scale twisted bilayer graphene,
    Commun. Mater. 2, 117 (2021).
  10. S. Mizuno, A. Ohta, T. Suzuki, H. Kageshima, J. Yuhara, and H. Hibino,
    Correlation between structures and vibration properties of germanene grown by Ge segregation,
    Appl. Phys. Express 14, 125501 (2021).
  11. S. Wang, J. Crowther, H. Kageshima, H. Hibino, and Y. Taniyasu,
    Epitaxial Intercalation Growth of Scalable Hexagonal Boron Nitride/Graphene Bilayer Moire Materials with Highly Convergent Interlayer Angles,
    ACS Nano 15, 14384 (2021).
  12. H. Kageshima, S. Wang, and H. Hibino,
    Theoretical study on role of edge termination for growth direction selectivity in chemical vapor deposition of hBN/graphene heterostructure on Cu surface,
    Appl. Phys. Express 14, 085502 (2021).
  13. S. Fuke, T. Sasaki, M. Takahasi, and H. Hibino,
    In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates,
    Jpn. J. Appl. Phys. 59, 070902 (2020).
  14. R. Makino, S. Mizuno, H. Kageshima, and H. Hibino,
    Controlled CVD growth of lateral and vertical graphene/h-BN heterostructures,
    Appl. Phys. Express 13, 065007 (2020).
  15. P. Solís-Fernández, Y. Terao, K. Kawahara, W. Nishiyama, T. Uwanno, Y.-C. Lin, K. Yamamoto, H. Nakashima, K. Nagashio, H. Hibino, K. Suenaga, and H. Ago,
    Isothermal growth and stacking evolution in highly uniform Bernal-stacked bilayer graphene,
    ACS Nano 14, 6834 (2020).
  16. Y. Sekine, H. Hibino, K. Oguri, A. Iwamoto, M. Nagase, H. Kageshima, and T. Akazaki,
    Surface-enhanced Raman scattering from buffer layer under graphene on SiC in a wide energy range from visible to near-infrared,
    Jpn. J. Appl. Phys. 59, 040902 (2020).
  17. H. Kageshima, S. Wang, and H. Hibino,
    Theoretical study on C adsorbate at graphene/Cu(111) or h-BN/Cu(111) interfaces,
    e-J. Surf. Sci. Nanotechnol. 18, 70 (2020).
  18. D. Nakamura, H. Saito, H. Hibino, K. Asano, and S. Takeyama,
    Electron-hole asymmetry of cyclotron resonance in monolayer graphene revealed by megagauss magnetic fields up to 560 T,
    Phys. Rev. B (accepted).
  19. R. Kou, Y. Kobayashi, S. Inoue, T. Tsuchizawa, Y. Ueno, S. Suzuki, H. Hibino, T. Yamamoto, H. Nakajima, and K. Yamada,
    Dopamine detection on activated reaction field consisting of graphene-integrated silicon photonic cavity,
    Opt. Exp. 27, 32058 (2019).
  20. A. B. Taslim, H. Nakajima, Y.-C. Lin, Y. Uchida, K. Kawahara,d T. Okazaki, K. Suenaga, H. Hibino, and H. Ago,
    Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on epitaxial Ni film,
    Nanoscale 11, 14668 (2019).
  21. T. Aoyama, H. Hibino, K. Okuda, and Š. Mikmeková,
    Visualization of three different phases in a multiphase steel by scanning electron microscopy at 1 eV landing energy,
    Ultramicroscopy 204, 1 (2019).
  22. A. E. B. Amend, T. Matsui, H. Hibino, and H. Fukuyama,
    STM/S Observations of Graphene on SiC(0001) Etched by H-plasma,
    Jpn. J. Appl. Phys. 58, SIIA13 (2019).
  23. S. Wang, A. E. Dearle, M. Maruyama, Y. Ogawa, S. Okada, H. Hibino, and Y. Taniyasu,
    Catalyst-Selective Growth of Single-Orientation Hexagonal Boron Nitride towards High-Performance Atomically Thin Electric Barriers,
    Adv. Mater. 31, 1900880 (2019).
  24. K. Suenaga, H. G. Ji, Y.-C. Lin, T. Vincent, M. Maruyama, A. S. Aji, Y. Shiratsuchi, D. Ding, K. Kawahara, S. Okada, V. Panchal, O. Kazakova, H. Hibino, K. Suenaga, and H. Ago,
    Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire,
    ACS Nano 12, 10032 (2018).
  25. Y. Ogawa, Y. Murata, S. Suzuki, H. Hibino, S. Heun, Y. Taniyasu, and K. Kumakura,
    Surface structures of graphene covered Cu (103),
    Jpn. J. Appl. Phys. 57, 100301 (2018).
  26. G. Yumoto, R. Matsunaga, H. Hibino, and R. Shimano,
    Ultrafast terahertz nonlinear optics of Landau level transitions in a monolayer graphene,
    Phys. Rev. Lett. 120, 107401 (2018).
  27. T. Cavallucci, Y. Murata, M. Takamura, H. Hibino, S. Heun, and V. Tozzini,
    Unraveling localized states in quasi free standing monolayer graphene by means of density functional theory,
    Carbon 130, 466 (2018).
  28. M. Ohtomo, Y. Sekine, H. Hibino, and H. Yamamoto,
    Graphene nanoribbon field-effect transistors fabricated by etchant-free transfer from Au(788),
    Appl. Phys. Lett. 112, 021602 (2018).
  29. Y. Murata, T. Cavallucci, V. Tozzini, N. Pavlicek, L. Gross, G. Meyer, M. Takamura, H. Hibino, F. Beltram, and S. Heun,
    Atomic and electronic structure of Si dangling bonds in quasi-free standing monolayer graphene,
    Nano Res. 11, 864 (2018).
  30. D. Ding, H. Hibino, and H. Ago,
    Grain boundaries and gas barrier property of graphene revealed by dark-filed optical microscopy,
    J. Phys. Chem. C 122, 902 (2018).
  31. F. Maeda, M. Takamura, and H. Hibino,
    Very gradual and anomalous oxidation at the interface of hydrogen-intercalated graphene/4H-SiC(0001),
    J. Phys. Chem. C 121, 26389 (2017).
  32. E. Maeda, Y. Miyata, H. Hibino, Y. Kobayashi, R. Kitaura, and H. Shinohara,
    Epitaxial growth of orientation-controlled hexagonal boron nitride monolayers from graphene edges,
    Appl. Phys. Express 10, 055102 (2017).
  33. D. Ding, P. Solis-Fern?ndez, R. M. Yunus, H. Hibino, and H. Ago,
    Behavior and role of superficial oxygen in Cu for the growth of large single-crystalline graphene,
    Appl. Surf. Sci. 408, 142 (2017).
  34. H. A. Hafez, X. Chai, Y. Sekine, Takamura, K. Oguri, I. Al-Naib, M. M. Dignam, H. Hibino, and T. Ozaki,
    Effects of environmental conditions on the ultrafast carrier dynamics in graphene revealed by terahertz spectroscopy,
    Phys. Rev. B 95, 165428 (2017).
  35. R. Kou, Y. Hori, T. Tsuchizawa, K. Warabi, Y. Kobayashi, Y. Harada, H. Hibino, T. Yamamoto, H. Nakajima, and K. Yamada,
    Ultra-fine metal gate operated graphene optical intensity modulator,
    Appl. Phys. Lett. 109, 251101 (2016).
  36. D. Ding, P. Sol?s-Fern?ndez, H. Hibino, and H. Ago,
    Spatially controlled nucleation of single-crystal graphene on Cu assisted by stacked Ni,
    ACS Nano 10, 11196 (2016).
  37. F. D. Parmentier, T. Cazimajou, Y. Sekine, H. Hibino, H. Irie, D. C. Glattli, N. Kumada, and P. Roulleau,
    Quantum Hall effect in epitaxial graphene with permanent magnets,
    Sci. Rep. 6, 38393 (2016).
  38. M. Takamura, H. Okamoto, K. Furukawa, H. Yamaguchi, and H. Hibino,
    Energy dissipation in graphene mechanical resonators with and without free-edges,
    Micromachines 7, 158 (2016).
  39. S. Wang, H. Hibino, S. Suzuki, and H. Yamamoto,
    Atmospheric pressure chemical vapor deposition growth of millimeter-scale single-crystalline graphene on the copper surface with native oxide layer,
    Chem. Mater. 28, 4893 (2016).
  40. Y. Takesaki, K. Kawahara, H. Hibino, S. Okada, M. Tsuji, and H. Ago,
    Highly uniform bilayer graphene on epitaxial Cu-Ni(111) alloy,
    Chem. Mater. 28, 4583 (2016).
  41. M. Takamura, H. Hibino, and H. Yamamoto,
    Applying Strain into Graphene by SU-8 Resist Shrinkage,
    J. Phys. D: Appl. Phys. 49, 285303 (2016).
  42. H. Hibino, C.M. Orofeo, S. Wang, and H. Kageshima,
    Growth and low-energy electron microscopy characterizations of graphene and hexagonal boron nitride,
    Prog. Cryst. Growth Charact. Mater. 62, 155 (2016).
  43. M. Ohtomo, Y. Sekine, S. Wang, H. Hibino, and H. Yamamoto,
    Etchant-free graphene transfer using facile intercalation of alkanethiol self-assembled molecules at graphene/metal interfaces,
    Nanoscale 8, 11503 (2016).
  44. K. Furukawa, Y. Ueno, M. Takamura, and H. Hibino,
    Graphene FRET Aptasensor,
    ACS Sensors 1, 710 (2016).
  45. H. Kageshima and H. Hibinio,
    Theoretical Study of Graphene on SiC(112??0) a-Face,
    e-J. Surf. Sci. Nanotechnol. 14, 113 (2016).
  46. M. Hattori, H. Ikenoue, D. Nakamura, K. Furukawa, M. Takamura, H. Hibino, and T. Okada,
    Direct growth of graphene on SiC(0001) by KrF-excimer-laser irradiation,
    Appl. Phys. Lett. 108, 093107 (2016).
  47. N. Kumada, F. D. Parmentier, H. Hibino, C. Glattli, and P. Roulleau,
    Shot noise generated by graphene p?n junctions in the quantum Hall effect regime,
    Nature Commun. 6, 8068 (2015).
  48. S Wang, Y Sekine, S Suzuki, F Maeda, and H Hibino,
    Photocurrent generation of a single-gate graphene p?n junction fabricated by interfacial modification,
    Nanotechnology 26, 385203 (2015).
  49. K. Takase, H. Hibino, and K. Muraki,
    Probing the extended-state width of disorder-broadened Landau levels in epitaxial graphene,
    Phys. Rev. B 92, 125407 (2015).
  50. H. Ago, Y. Ohta, H. Hibino, D. Yoshimura, R. Takizawa, Y. Uchida, M. Tsuji, T. Okajima, H. Mitani, and S. Mizuno,
    Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces,
    Chem. Mater. 27, 5377 (2015).
  51. Y. Ueno, K. Furukawa, A. Tin, and H. Hibino,
    On-chip FRET Graphene Oxide Aptasensor: Quantitative Evaluation of Enhanced Sensitivity by Aptamer with a Double-stranded DNA Spacer,
    Anal. Sci. 31, 875 (2015).
  52. S. Suzuki and H. Hibino,
    Large optical anisotropy for terahertz light of stacked graphene ribbons with slight asymmetry,
    J. Appl. Phys. 117, 174302 (2015).
  53. Y. Kobayashi, S. Sasaki, S. Mori, H. Hibino, Z. Liu, K. Watanabe, T. Taniguchi, K. Suenaga, Y. Maniwa, and Y. Miyata,
    Growth and Optical Properties of High-Quality Monolayer WS2 on Graphite,
    ACS Nano 9, 4056 (2015).
  54. A. Iagallo, S. Tanabe, S. Roddaro, M. Takamura, Y. Sekine, H. Hibino, V. Miseikis, C. Coletti, V. Piazza, F. Beltram, and S. Heun,
    Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene,
    Semicond. Sci. Technol. 30, 055007 (2015).
  55. Y. Ueno, K. Furukawa, K. Matsuo, S. Inoue, K. Hayashi, and H. Hibino,
    On-chip graphene oxide aptasensor for multiple protein detection,
    Anal. Chim. Acta 866, 1 (2015).
  56. H. A. Hafez, I. Al-Naib, M. M. Dignam, Y. Sekine, K. Oguri, F. Blanchard, D. G. Cooke, S. Tanaka, F. Komori, H. Hibino, and T. Ozaki,
    Nonlinear terahertz field-induced carrier dynamics in photoexcited epitaxial monolayer graphene,
    Phys. Rev. B 91, 035422 (2015).
  57. R.-S. O, M. Takamura, K. Furukawa, M. Nagase, and, H. Hibino,
    Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene,
    Jpn. J. Appl. Phys. 54, 036502 (2015).
  58. Y. Murata, T. Mashoff, M. Takamura, S. Tanabe, H. Hibino, F. Beltram, and S. Heun,
    Correlation between morphology and transport properties of quasi-free-standing monolayer graphene,
    Appl. Phys. Lett. 105, 221604 (2014).
  59. N. Kumada, P. Roulleau, B. Roche, M. Hashisaka, H. Hibino, I. Petkovic, and D. C. Glattli,
    Resonant edge magnetoplasmons and their decay in graphene,
    Phys. Rev. Lett. 113, 266601 (2014).
  60. S. Wang, S. Suzuki, and H. Hibino,
    Raman spectroscopic investigation of polycrystalline structures of CVD-grown graphene by isotope labeling,
    Nanoscale 6, 13838 (2014).
  61. Y. Momiuchi, K. Yamada, K. Kato, Y. Homma, H. Hibino, G. Odahara, and C. Oshima,
    In-situ scanning electron microscopy of graphene nucleation during segregation of carbon on polycrystalline Ni substrate,
    J. Phys. D: Appl. Phys. 47, 455301 (2014).
  62. H. A. Hafez, I. Al-Naib, K. Oguri, Y. Sekine, M. M. Dignam, A. Ibrahim, D.G. Cooke, S. Tanaka, F. Komori, H. Hibino, and T. Ozaki,
    Nonlinear transmission of an intense terahertz field through monolayer graphene,
    AIP Adv. 4, 117118 (2014).
  63. C. M. Orofeo, S. Suzuki, Y. Sekine, and H. Hibino,
    Scalable synthesis of layer-controlled WS2 and MoS2 sheets by sulfurization of thin metal films,
    Appl. Phys. Lett 105, 083112 (2014).
  64. S. Tanabe, K. Furukawa, and H. Hibino,
    Etchant-free and damageless transfer of monolayer and bilayer graphene grown on SiC,
    Jpn. J. Appl. Phys. 53, 115101 (2014).
  65. M. Okada, T. Sawazaki, K. Watanabe, T. Taniguchi, H. Hibino, H. Shinohara, and R. Kitaura,
    Direct chemical vapor deposition growth of WS2 atomic layers on hexagonal boron nitride,
    ACS Nano 8, 8273 (2014).
  66. M. Takamura, H. Okamoto, K. Furukawa, H. Yamaguchi, and H. Hibino,
    Energy dissipation in edged and edgeless graphene mechanical resonators,
    J. Appl. Phys 116, 064304 (2014).
  67. R. M. Yunus, M. Miyashita, M. Tsuji, H. Hibino, and H. Ago,
    Formation of oriented graphene nanoribbons over heteroepitaxial Cu surfaces by chemical vapor deposition,
    Chem. Mater. 26, 5215 (2014).
  68. N. Kumada, R. Dubourget, K. Sasaki, S. Tanabe, H. Hibino, H. Kamata, M. Hashisaka, K. Muraki, and T. Fujisawa,
    Plasmon transport and its guiding in graphene,
    New J. Phys. 16, 063055 (2014).
  69. K. Warabi, R. Kou, S. Tanabe, T. Tsuchizawa, S. Suzuki, H. Hibino, H. Nakajima, and K. Yamada,
    Optical absorption characteristics and polarization dependence of single-layer graphene on Si waveguides,
    IEICE Trans. Electron. E97-C, 736 (2014).
  70. H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase,
    Stability and reactivity of [11-20] step in initial stage of epitaxial graphene growth on SiC(0001),
    Mater. Sci. Forum 778-780, 1150 (2014).
  71. R. Kou, S. Tanabe, T. Tsuchizawa, T. Yamamoto, H. Hibino, H. Nakajima, and K. Yamada,
    Influence of graphene on quality factor variation in a silicon ring resonator,
    Appl. Phys. Lett. 104, 091122 (2014).
  72. S. Tanabe, M. Takamura, Y. Harada, H. Kageshima, and H. Hibino,
    Effect of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene,
    Jpn. J. Appl. Phys. 53, 04EN01 (2014).
  73. C. M. Orofeo, S. Suzuki, and H. Hibino,
    Ultrathin CVD-grown hexagonal boron nitride as a high-quality dielectric for tunneling devices on rigid and flexible substrates,
    J. Phys. Chem. C 118, 3340 (2014).
  74. S. Wang, S. Suzuki, K. Furukawa, C. M. Orofeo, M. Takamura, and H. Hibino,
    Selective charge doping of chemical vapor deposition-grown graphene by interface modification,
    Appl. Phys. Lett. 103, 253116 (2013).
  75. A. Iagallo, S. Tanabe, S. Roddaro, M. Takamura, and H. Hibino, and S. Heun,
    Tuning of quantum interference in top-gated graphene on SiC,
    Phys. Rev. B 88, 235406 (2013).
  76. H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase,
    Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface,
    Phys. Rev. B 88, 235405 (2013).
  77. H. Ago, I. Tanaka, Y. Ogawa, R. M. Yunus, M. Tsuji, and H. Hibino,
    Lattice-oriented catalytic growth of graphene nanoribbons on heteroepitaxial nickel films,
    ACS Nano 7, 10825 (2013).
  78. S. Suzuki, C. M. Orofeo, S. Wang, F. Maeda, M. Takamura, and H. Hibino,
    Structural instability of transferred graphene grown by chemical vapor deposition against heating,
    J. Phys. Chem. C 117, 22123 (2013).
  79. Y. Ueno, K. Furukawa, K. Matsuo, S. Inoue, K. Hayashi, and H. Hibino,
    Molecular design for enhanced sensitivity of a FRET aptasensor built on the graphene oxide surface,
    Chem. Commun. 49, 10346 (2013).
  80. F. Maeda, S. Tanabe, S. Isobe and H. Hibino,
    Core-level photoelectron spectroscopy study of interface structure of hydrogen-intercalated graphene on n-type 4H-SiC(0001),
    Phys. Rev. B 88, 085422 (2013).
  81. T. Mashoff, M. Takamura, S. Tanabe, H. Hibino, F. Beltram, and S. Heun,
    Hydrogen storage with titanium-functionalized graphene,
    Appl. Phys. Lett. 103, 013903 (2013).
  82. H. Fukidome, Y. Kawai, H. Handa, H. Hibino, H. Miyashita, M. Kotsugi, T. Ohkouchi, M.-H. Jung, T. Suemitsu, T. Kinoshita, T. Otsuji, and M. Suemitsu,
    Site-selective epitaxy of graphene on Si wafers,
    Proc. IEEE 101, 1557 (2013).
  83. S. Suzuki, R. M. Pallares, C. M. Orofeo, and H. Hibino,
    Boron nitride growth on metal foil using solid sources,
    J. Vac. Sci. Technol. B 31, 041804 (2013).
  84. R. Kou, S. Tanabe, T. Tsuchizawa, K. Warabi, S. Suzuki, H. Hibino, H. Nakajima, and K. Yamada,
    Characterization for optical absorption and polarization dependence of single-layer graphene integrated on a silicon wire waveguide,
    Jpn. J. Appl. Phys. 52, 060203 (2013).
  85. R. Shimano, G. Yumoto, J. Y. Yoo, R. Matsunaga, S. Tanabe, H. Hibino, T. Morimoto, and H. Aoki,
    Quantum Faraday and Kerr rotations in graphene,
    Nature Commun. 4, 1841 (2013).
  86. M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
    Graphene-based nanoelectromechanical switch with high on/off ratio,
    Appl. Phys. Express 6, 055101 (2013).
  87. Y. Murata, M. Takamura, H. Kageshima, and H. Hibino,
    Self-organization of a hexagonal network of quasi-free-standing monolayer graphene nanoribbons,
    Phys. Rev. B 87, 165408 (2013).
  88. C. M. Orofeo, S. Suzuki, H. Kageshima, and H. Hibino,
    Growth and low-energy electron microscopy characterization of monolayer hexagonal boron nitride on epitaxial cobalt,
    Nano Res. 6, 335 (2013).
  89. F. Maeda and H. Hibino,
    Molecular beam epitaxial growth of graphene using cracked ethylene -advantage over ethanol growth-,
    Diamond Relat. Mater. 34, 84 (2013).
  90. F. Maeda and H. Hibino,
    Molecular beam epitaxial growth of graphene using cracked ethylene,
    J. Crystal Growth 378, 404 (2013).
  91. K. Kanzaki, H. Hibino, and T. Makimoto,
    Graphene layer formation on polycrystalline nickel grown by chemical vapor deposition,
    Jpn. J. Appl. Phys. 52, 035103 (2013).
  92. K. Furukawa, Y. Ueno, E. Tamechika, and H. Hibino,
    Protein recognition on single graphene oxide surface fixed on solid support,
    J. Mater. Chem. B 1, 1119 (2013).
  93. N. Kumada, S. Tanabe, H. Hibino, H. Kamata, M. Hashisaka, K. Muraki, and T. Fujisawa,
    Plasmon transport in graphene investigated by time-resolved electrical measurements,
    Nature Commun. 4, 1363 (2013).
  94. M. Takamura, K. Furukawa, H. Okamoto, S. Tanabe, H. Yamaguchi, and H. Hibino,
    Epitaxial trilayer graphene mechanical resonators obtained by electrochemical etching combined with hydrogen intercalation,
    Jpn. J. Appl. Phys. 52, 04CH01 (2013).
  95. Y. Ueno, K. Furukawa, K. Hayashi, M. Takamura, H. Hibino, and E. Tamechika,
    Graphene-modified interdigitated array electrode: fabrication, characterization, and electrochemical immunoassay application,
    Anal. Sci. 29, 55 (2013).
  96. S. Tanabe, M. Takamura, Y. Harada, H. Kageshima, and H. Hibino,
    Quantum Hall effect and carrier scattering in quasi-free-standing monolayer graphene,
    Appl. Phys. Express 5, 125101 (2012).
  97. K. Furukawa and H. Hibino,
    Self-spreading of supported lipid bilayer on SiO2 surface bearing graphene oxide,
    Chem. Lett. 41, 1259 (2012).
  98. K. Takase, S. Tanabe, S. Sasaki, H. Hibino, and K. Muraki,
    Impact of graphene quantum capacitance on transport spectroscopy,
    Phys. Rev. B 86, 165435 (2012).
  99. Y. Ueno, K. Furukawa, S. Suzuki, E. Tamechika, and H. Hibino,
    Near-infrared photoluminescence spectral imaging of chemically oxidized graphene flakes,
    e-J. Surf. Sci. Nanotechnol. 10, 513 (2012).
  100. S. Suzuki, R. M. Pallares, and H. Hibino,
    Growth of atomically thin hexagonal boron nitride films by diffusion through a metal film and precipitation,
    J. Phys. D: Appl. Phys. 45, 385304 (2012).
  101. H. Ago, Y. Ogawa, M. Tsuji, S. Mizuno, and H. Hibino,
    Catalytic growth of graphene: toward large-area single-crystalline graphene,
    J. Phys. Chem. Lett. 3, 2228 (2012).
  102. R.-S. O, A. Iwamoto, Y. Nishi, Y. Funase, T. Yuasa, T. Tomita, M. Nagase, H. Hibino, and H. Yamaguchi,
    Microscopic Raman mapping of epitaxial graphene on 4H-SiC(0001),
    Jpn. J. Appl. Phys. 51, 06FD06 (2012).
  103. S. Suzuki and H. Hibino,
    Chemical vapor deposition of hexagonal boron nitride,
    e-J. Surf. Sci. Nanotechnol. 10, 133 (2012).
  104. S. Suzuki, Y. Takei, K. Furukawa, G. Webber, S. Tanabe, and H. Hibino,
    Graphene growth from spin-coated polymers without a gas,
    Jpn. J. Appl. Phys. 51, 06FD01 (2012).
  105. S. Kamoi, K. Kisoda, N. Hasuike, H. Harima, K. Morita, S. Tanaka, A. Hashimoto, and H. Hibino,
    A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC,
    Diamond Relat. Mater. 25, 80 (2012).
  106. H. Kageshima, H. Hibino, and S. Tanabe,
    Physics of epitaxial graphene on SiC(0001),
    J. Phys.: Condens. Matter 24, 314215 (2012).
  107. F. Maeda and H. Hibino,
    Formation of graphene nanofin networks on graphene/SiC(0001) by molecular beam epitaxy,
    Jpn. J. Appl. Phys. 51, 06FD16 (2012).
  108. G. Odahara, H. Hibino, N. Nakayama, T. Shimbata, C. Oshima, S. Otani, M. Suzuki, T. Yasue, and T. Koshikawa,
    Macroscopic single-domain graphene growth on polycrystalline nickel surface,
    Appl. Phys. Express 5, 035501 (2012).
  109. C. M. Orofeo, H. Hibino, K. Kawahara, Y. Ogawa, M. Tsuji, K. Ikeda, S. Mizuno, and H. Ago,
    Influence of Cu metal on domain structure and mobility of single-layer graphene,
    Carbon 50, 2189 (2012).
  110. K. Takahashi, K. Yamada, H. Kato, H. Hibino, and Y. Homma,
    In-situ scanning electron microscopy of graphene growth on polycrystalline Ni substrate,
    Surf .Sci. 606, 728 (2012).
  111. H. Hibino, S. Tanabe, S. Mizuno, and H. Kageshima,
    Growth and electronic transport properties of epitaxial graphene on SiC(0001),
    J. Phys. D: Appl. Phys. 45, 154008 (2012).
  112. S. Tanabe, Y. Sekine, H. Kageshima, and H. Hibino,
    Electrical characterization of bilayer graphene formed by hydrogen intercalation of monolayer graphene on SiC(0001),
    Jpn. J. Appl. Phys. 51, 02BN02 (2012).
  113. S. Suzuki and H. Hibino,
    Chemical vapor deposition of boron- and nitrogen-containing graphene thin films,
    Mat. Sci. Eng. B 177, 233 (2012).
  114. Y. Ogawa, B. Hu, C. M. Orofeo, M. Tsuji, K. Ikeda, S. Mizuno, H. Hibino, and H. Ago,
    Domain structure and boundary in single-layer graphene grown on Cu(111) and Cu(100) films,
    J. Phys. Chem. Lett. 3, 219 (2012).
  115. F. Maeda and H. Hibino,
    Molecular beam epitaxial growth of graphene and ridge-structure networks of graphene,
    J. Phys. D: Appl. Phys. 44, 435305 (2011).
  116. S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino,
    Carrier transport mechanism in graphene on SiC(0001),
    Phys. Rev. B 84, 115458 (2011).
  117. H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase,
    Theoretical study on epitaxial graphene growth by Si sublimation from SiC(0001) surface,
    Jpn. J. Appl. Phys. 50, 095601 (2011).
  118. S. Suzuki, Y. Takei, K. Furukawa, and H. Hibino,
    Graphene growth from a spin-coated polymer without a reactive gas,
    Appl. Phys. Express 4, 065102 (2011).
  119. S. Kondo, M. Sato, M. Uwaha, and H. Hibino,
    Pattern formation of a step induced by a moving linear source,
    Phys. Rev. B 84, 045420 (2011).
  120. S. Suzuki and H. Hibino,
    Characterization of doped single-wall carbon nanotubes by Raman spectroscopy,
    Carbon 49, 2264 (2011).
  121. F. Maeda and H. Hibino,
    Study of graphene growth by gas-source molecular beam epitaxy using cracked ethanol: influence of gas flow rate on graphitic material deposition,
    Jpn. J. Appl. Phys.50, 06GE12 (2011).
  122. H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi,
    Theoretical study on magnetoelectric and thermoelectric properties for graphene devices,
    Jpn. J. Appl. Phys. 50, 070115 (2011).
  123. F. Maeda and H. Hibino, I. Hirosawa, and Y. Watanabe,
    Evaluation of few-layer graphene grown by gas-source molecular beam epitaxy using cracked ethanol,
    e-J. Surf. Sci. Nanotechnol. 9, 58 (2011).
  124. S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino,
    Observation of bandgap in epitaxial bilayer graphene field effect transistor,
    Jpn. J. Appl. Phys. 50, 04DN04 (2011).
  125. H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi,
    Atomic structure and physical properties of epitaxial graphene islands embedded in SiC(0001) surfaces,
    Appl. Phys. Express 3, 115103 (2010).
  126. H. Hibino, H. Kageshima, and M. Nagase,
    Epitaxial few-layer graphene: toward single crystal growth,
    J. Phys. D: Appl. Phys. 43, 374005 (2010).
  127. S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino,
    Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices,
    Appl. Phys. Express 3, 075102 (2010).
  128. M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
    Contact conductance measurement of locally suspended graphene on SiC,
    Appl. Phys. Express 3, 045101 (2010).
  129. H. Kageshima, H. Hibino, and M. Nagase,
    Epitaxial graphene growth studied by low-energy electron microscopy and first-principles,
    Mater. Sci. Forum 645-648, 597 (2010).
  130. F. Maeda and H. Hibino,
    Thin graphitic structure formation on various substrates by gas-source molecular beam epitaxy using cracked-ethanol,
    Jpn. J. Appl. Phys.49, 04DH13 (2010).
  131. F. Maeda and H. Hibino,
    Growth of few-layer graphene by gas-source molecular beam epitaxy using cracked ethanol,
    Phys. Stat. Solidi B 247, 916 (2010).
  132. S. Tanaka, K. Morita, and H. Hibino,
    Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces,
    Phys. Rev. B 81, 041406(R) (2010).
  133. M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
    Local conductance measurements of double-layer graphene on SiC substrate,
    Nanotechnology 20, 445704 (2009).
  134. H. Hibino, S. Mizuno, H. Kageshima, M. Nagase, and H. Yamaguchi,
    Stacking domains of epitaxial few-layer graphene on SiC(0001),
    Phys. Rev. B 80, 085406 (2009).
  135. H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi,
    Theoretical study of epitaxial graphene growth on SiC(0001) surfaces,
    Appl. Phys. Express 2, 065502 (2009).
  136. H. Hibino, H. Kageshima, M. Kotsugi, F. Maeda, F.-Z. Guo,and Y. Watanabe,
    Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy,
    Phys. Rev. B 79, 125437 (2009).
  137. N. Akutsu, H. Hibino, and T. Yamamoto,
    A lattice model for thermal decoration and step bunching in vicinal surface with sub-monolayer adsorbates,
    e-J. Surf. Sci. Nanotechnol. 7, 39 (2009).
  138. F. Maeda, H. Hibino, S. Suzuki, and F.-Z. Guo,
    Oxide-mediated formation of alpha-FeSi2 on Si(001) studied by x-ray absorption near edge structure analysis using SPELEEM,
    Surf. Int. Anal. 40, 1747 (2008).
  139. M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
    In-plane conductance measurement of graphene nanoislands using integrated nanogap probe,
    Nanotechnology 19, 495701 (2008).
  140. H. Hibino, H. Kageshima, and M. Uwaha,
    Instability of steps during Ga deposition on Si(111),
    Surf. Sci. 602, 2421 (2008).
  141. H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, Y. Kobayashi, and H. Yamaguchi,
    Thickness determination of graphene layers formed on SiC using low-energy electron microscopy,
    e-J. Surf. Sci. Nanotechnol. 6, 107 (2008).
  142. H. Hibino, H. Kageshima, F.-Z. Guo, F. Maeda, M. Kotsugi, and Y. Watanabe,
    Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001),
    Appl. Surf. Sci. 254, 7596 (2008).
  143. H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi,
    Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons,
    Phys. Rev. B 77, 075413 (2008).
  144. D. Takagi, Y. Kobayashi, H. Hibino, S. Suzuki, and Y. Homma,
    Mechanism of gold-catalyzed carbon material growth,
    Nano Lett. 8, 832 (2008).
  145. D. Takagi, H. Hibino, S. Suzuki, Y. Kobayashi, and Y. Homma,
    Carbon nanotube growth from semiconductor nanoparticles,
    Nano Lett. 7, 2272 (2007).
  146. Y. Kobayashi, H. Hibino, T. Nakamura, T. Akasaka, T. Makimoto, and N. Matsumoto,
    Boron nitride thin films grown on graphitized 6H-SiC substrates by metalorganic vapor phase epitaxy,
    Jpn. J. Appl. Phys. 46, 2554 (2007).
  147. C. S. Ramanujan, K. Sumitomo, M. R. R. de Planque, H. Hibino, K. Torimitsu, and J. F. Ryan,
    Self-assembly of vesicle nanoarrays on Si: A potential route to high-density functional protein arrays,
    Appl. Phys. Lett. 90, 033901 (2007).
  148. D. Takagi, Y. Homma, H. Hibino, S. Suzuki, and Y. Kobayashi,
    Single-walled carbon nanotube growth from highly activated metal nanoparticles,
    Nano Lett. 6, 2642 (2006).
  149. H. Hibino, M. Uematsu, and Y. Watanabe,
    Void growth during thermal decomposition of silicon oxide layers studied by low-energy electron microscopy,
    J. Appl. Phys. 100, 113519 (2006).
  150. K. Tateno, H. Hibino, H. Gotoh, and H. Nakano,
    Vertical GaP nanowires arranged at atomic steps on Si(111) substrates,
    Appl. Phys. Lett. 89, 033114 (2006).
  151. F. Maeda, H. Hibino, S. Suzuki, Y. Kobayashi, Y. Watanabe, and F.-Z. Guo,
    Surface Reactions of Co on SiO2 thin layer/Si substrate Studied by LEEM and PEEM,
    e-J. Surf. Sci. Nanotechnol. 4, 155 (2006).
  152. H. Hibino, Y. Watanabe, C.-W. Hu, and I. S. T. Tsong,
    Thermal decay of superheated 7×7 islands and supercooled “1×1” vacancy islands on Si(111),
    Phys. Rev. B 72, 245424 (2005).
  153. H. Hibino and Y. Watanabe,
    Arrangement of Au-Si alloy islands at atomic steps,
    Surf. Sci. 588, L233 (2005).
  154. H. Hibino and Y. Watanabe,
    Growth of twinned epitaxial layers on Si(111)√3x√3-B studied by low-energy electron microscopy,
    Jpn. J. Appl. Phys. 44, 358 (2005).
  155. A. Kaneko, Y. Homma, H. Hibino, and T. Ogino,
    Ultrahigh vacuum scanning electron microscope system combined with wide-movable scanning tunneling microscope,
    Rev. Sci. Instrum. 76, 083709 (2005).
  156. H. Hibino, Y. Homma, C.-W. Hu, M. Uwaha, T. Ogino, and I. S. T. Tsong,
    Structural and morphological changes on surfaces with multiple phases studied by low-energy electron microscopy,
    Appl. Surf. Sci. 237, 51 (2004).
  157. Y. Watanabe, H. Hibino, S. Bhunia, K. Tateno, and T. Skiguchi,
    Site-controlled InP nanowires grown on patterned Si substrates,
    Physica E 24, 133 (2004).
  158. H. Hibino, Y. Homma, M. Uwaha, and T. Ogino,
    Step wandering induced by homoepitaxy on Si(111) during “1×1”-7×7 phase transition,
    Surf. Sci. 527, L222 (2003).
  159. R. Kato, M. Uwaha, H. Hibino, and Y. Saito,
    Step wandering due to the gap in diffusion coefficient on the upper and the lower terraces,
    Surf. Sci. 522, 64 (2003).
  160. K. Prabhakaran, H. Hibino, and T. Ogino,
    Ultrafine and well-defined patterns on silicon through reaction selectivity,
    Adv. Mater. 14, 1418 (2002).
  161. T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, D. J. Bottomley, F. Ling, and A. Kaneko,
    Design of Si surfaces for self-assembled nano architecture,
    Surf. Sci. 514, 1 (2002).
  162. H. Hibino and T. Ogino,
    Growth of Si twinning superlattice,
    Mat. Sci. Eng. B87, 214 (2001).
  163. H. Hibino, C.-W. Hu, T. Ogino, and I. S. T. Tsong,
    Diffusion barrier caused by 1 x 1 and 7 x 7 on Si(111) during phase transition,
    Phys. Rev. B 64, 245401 (2001).
  164. H. Hibino, C.-W. Hu, T. Ogino, and I. S. T. Tsong,
    Decay kinetics of two-dimensional islands and holes on Si(111) studied by low-energy electron microscopy,
    Phys. Rev. B 63, 245402 (2001).
  165. J.-F. Nielsen; J. P. Pelz; H. Hibino, C.-W. Hu; I. S. T. Tsong; and J. Kouvetakis,
    Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure,
    Appl. Phys. Lett. 79, 3857 (2001).
  166. J.-F. Nielsen; J. P. Pelz; H. Hibino, C.-W. Hu; and I. S. T. Tsong,
    Enhanced terrace stability for preparation of step-free Si(001)-(2×1) surfaces,
    Phys. Rev. Lett. 87, 136103 (2001).
  167. C.-W. Hu, H. Hibino, T. Ogino, and I. S. T. Tsong,
    Hysteresis in the (1×1)-(7×7) first-order phase transition on the Si(111) surface,
    Surf. Sci. 487, 191 (2001).
  168. H. Hibino and T. Ogino,
    Si twinning superlattice: growth of new single crystal Si,
    Surf. Rev. Lett. 7, 631 (2000).
  169. H. Hibino, T. Kawamura, and T. Ogino,
    RHEED analysis of twinned homoepitaxial layers grown on Si(111)√3x√3-B,
    Thin Solid Films 369, 5 (2000).
  170. K. Sumitomo, H. Hibino, Y. Homma, and T. Ogino,
    Observation of incomplete surface melting of Si using medium-energy ion scattering spectroscopy,
    Jpn. J. Appl. Phys. 7B, 4421 (2000).
  171. J. B. Hannon, H. Hibino, N. C. Bartelt, B. S. Swartzentruber, T. Ogino, and G. L. Kellogg,
    Dynamics of the silicon (111) surface phase transition,
    Nature (London) 405, 552 (2000).
  172. Y. Homma, H. Hibino, Y. Kunii, and T. Ogino,
    Transformation of surface structures on vicinal Si(111) during heating,
    Surf. Sci.. 445, 327 (2000).
  173. T. Ogino, H. Hibino, and Y. Homma,
    Kinetics and thermodynamics of surface steps on semiconductors,
    Critical Reviews in Solid State and Materials Sciences 24, 227 (1999).
  174. T. Ogino, H. Hibino, Y. Homma, Y. Kobayashi, K. Prabhakaran, K. Sumitomo, and H. Omi,
    Fabrication and integration of nanostructures on Si surfaces,
    Acc. Chem. Res. 32, 447 (1999).
  175. T. Kawamura, H. Hibino, and T. Ogino,
    Origin of reducing domain boundaries of Si(111)-7×7 during homoepitaxial growth,
    Jpn. J. Appl. Phys. 38, 1530 (1999).
  176. H. Hibino, K. Sumitomo, T. Fukuda, Y. Homma, and T. Ogino,
    Disordering of Si(111) at high temperatures,
    Phys. Rev. B 58, 12587 (1998).
  177. H. Hibino, Y. Homma, and T. Ogino,
    Triangular-tiled arrangement of 7×7 and ‘1×1’ domains on Si(111),
    Phys. Rev. B 58, R7500 (1998).
  178. H. Hibino and T. Ogino,
    Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)√3x√3-B,
    Surf. Sci. 412/413, 132 (1998).
  179. H. Hibino, K. Sumitomo, and T. Ogino,
    Twinned epitaxial layers formed on Si(111)√3x√3-B,
    J. Vac. Sci. Technol. A 16, 1934 (1998).
  180. H. Hibino, K. Sumitomo, and T. Ogino,
    Growth process of twinned epitaxial layers on Si(111)√3x√3-B and their thermal stability,
    Appl. Surf. Sci. 130-132, 41 (1998).
  181. Y. Homma, H. Hibino, T. Ogino, and N. Aizawa,
    Sublimation of heavily B-doped Si(111) surface,
    Phys. Rev. B 58, 13146 (1998).
  182. H. Hibino and T. Ogino,
    Phase transitions on Si(113): a high-temperature scanning tunneling microscopy study,
    Phys. Rev. B 56, 4092 (1997).
  183. H. Hibino and T. Ogino,
    Substitution of In for Si adatoms and exchanges between In and Si adatoms on a Si(111)-7×7 surface,
    Phys. Rev. B 55, 7018 (1997).
  184. T. Ogino, H. Hibino, and Y. Homma,
    Step arrangement design and nanostructure self-organization on Si surfaces,
    Appl. Surf. Sci. 117, 642 (1997).
  185. Y. Homma, H. Hibino, T. Ogino, and N. Aizawa,
    Sublimation of Si(111) in ultrahigh vacuum,
    Phys. Rev. B 55, R10237 (1997).
  186. H. Hibino and T. Ogino,
    Exchanges between group-III and Si atoms on Si(111)-√3x√3 surfaces,
    Phys. Rev. B 54, 5763 (1996).
  187. H. Hibino, Y. Homma, and T. Ogino,
    ‘1×1’-to-7×7 phase transition under heating current,
    Surf. Sci. 364, L587 (1996).
  188. H. Hibino and T. Ogino,
    Two-stage phase transition of 12×1 reconstruction on Si(331),
    Phys. Rev. B 53, 15682 (1996).
  189. H. Hibino and T. Ogino,
    Phase transition of 12×1 reconstruction on Si(331),
    Surf. Sci. 357-358, 102 (1996).
  190. T. Ogino, H. Hibino, and K. Prabhakaran,
    Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self-organization processes,
    J. Vac. Sci. Technol. B 14, 4134 (1996).
  191. T. Ogino, H. Hibino, and Y. Homma,
    Step arrangement design and nanostructure self-organization on Si(111) surfaces by patterning-assisted control,
    Appl. Surf. Sci. 107, 1 (1996).
  192. H. Hibino and T. Ogino,
    Reducing domain boundaries of surface reconstruction during molecular-beam epitaxy on Si(111),
    Appl. Phys. Lett. 67, 915 (1995).
  193. H. Hibino and T. Ogino,
    Exchanges between Si and Pb adatoms on Si(111),
    Surf. Sci. 328, L547 (1995).
  194. H. Hibino, Y. Homma, and T. Ogino,
    Real-space observation of (111) facet formation on vicinal Si(111) surfaces,
    Phys. Rev. B 51, 7753 (1995).
  195. T. Ogino, H. Hibino, and Y. Homma,
    Patterning-assisted control for ordered arrangement of atomic steps on Si(111) surfaces,
    Jpn. J. Appl. Phys. 34, L668 (1995).
  196. Y. Homma, N. Aizawa, and H. Hibino,
    Direct evidence for Ge preferential growth at steps and out-of-phase boundaries of (7×7) domains on Si(111) in solid phase epitaxy,
    Surf. Sci. 324, L333 (1995).
  197. H. Hibino and T. Ogino,
    Scanning tunneling microscopy observations of Ge solid-phase epitaxy on Si(111),
    Appl. Surf. Sci. 82/83, 374 (1994).
  198. H. Hibino and T. Ogino,
    Trace of interface reconstruction in Ge solid-phase epitaxy on Si(111),
    Phys. Rev. B 49, 5765 (1994).
  199. H. Hibino and T. Ogino,
    Transient step bunching on a vicinal Si(111) surface,
    Phys. Rev. Lett. 72, 657 (1994).
  200. H. Hibino, N. Shimizu, K. Sumitomo, Y. Shinoda, and T. Ogino,
    Pb preadsorption facilitates island formation during Ge growth on Si(111),
    J. Vac. Sci. Technol. A12, 23 (1994).
  201. H. Hibino, N. Shimizu, and Y. Shinoda,
    Mesh pattern of Ge islands grown using solid phase epitaxy,
    J. Vac. Sci. Technol. A11, 2358 (1993).
  202. H. Hibino, T. Fukuda, M. Suzuki, Y. Homma, T. Sato, M. Iwatsuki, K. Miki, and H. Tokumoto,
    High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surface,
    Phys. Rev. B 47, 13027 (1993).
  203. M. Suzuki, H. Hibino, Y. Homma, T. Fukuda, T. Sato, M. Iwatsuki, K. Miki, and H. Tokumoto,
    Real-time observation of (1×1)-(7×7) phase transition on vicinal Si(111) surfaces by scanning tunneling microscopy,
    Jpn. J. Appl. Phys. 32, 3247 (1993).
  204. M. Suzuki, Y. Homma, H. Hibino, T. Fukuda, T. Sato, M. Iwatsuki, K. Miki, and H. Tokumoto,
    Real-time scanning tunneling microscopy of (1×1)-(7×7) phase transition on a vicinal Si(111) surface,
    J. Vac. Sci. Technol. A11, 1640 (1993).
  205. Y. Homma, M. Suzuki, and H. Hibino,
    Step band structures on vicinal Si(111) surfaces created by DC resistive heating,
    Appl. Surf. Sci. 60/61, 460 (1992).
  206. Y. Shinoda, N. Shimizu, H. Hibino, T. Nishioka, C. Heimlich, Y. Kobayashi, S. Ishizawa, K. Sugii, and M. Seki,
    Surface structural changes during the initial growth of Ge on Si(111)7×7,
    Appl. Surf. Sci. 60/61, 112 (1992).
  207. K. Sugii, S. Ishizawa, Y. Kobayashi, H. Hibino, and M. Seki,
    TEM moire pattern and scanning Auger electron microscope analysis of anomalous Si incorporation into MBE-grown Ge on Si(111),
    Jpn. J. Appl. Phys. 31, 3296 (1992).
  208. H. Hibino, Y. Shinoda, Y. Kobayashi, and K. Sugii,
    Reflection high-energy electron diffraction studies of vicinal Si(111) surfaces,
    Jpn. J. Appl. Phys. 30, 1337 (1991).
  209. Y. Homma, R. J. McClelland, and H. Hibino,
    DC-resistive-heating-induced step bunching on vicinal Si(111),
    Jpn. J. Appl. Phys. 29, L2254 (1990).

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