- R. S. Low, J. T. Asubar, A. Baratov, S. Kamiya, I. Nagase, S. Urano, S. Kawabata, H. Tokuda, M. Kuzuhara, Y. Nakamura, K. Naito, T. Motoyama, and Z. Yatabe, “GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and enivironmental-friendly mist-CVD technique,” Appl. Phys. Express 14, 031004 (2021).
- K. C. Herbert, K. Shibata, J. T. Asubar, and M. Kuzuhara, “Stoichiometric imbalances in Mg-implanted GaN,” Jpn. J. Appl. Phys. 60, 066504 (2021).
- A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, Y. Honda, S. Roy, H. Amano, B. Sarkar, “Generalized frequency dependent small signal model for high frequency analysis of AlGaN/GaN MOS-HEMTs,” IEEE J. Electron Devices Soc. 9, 570 (2021).
- T. Tanaka, N. Ito, S. Takano, M. Kuzuhara, and K. Nakahara, “Deep-donor-induced suppression of current collapse in an AlGaN-GaN heterojunction structure on Si,” IEICE Trans. Electronics, E103-C, 186 (2020).
- H. Tokuda, J. T. Asubar, and M. Kuzuhara, “Design consideration for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs,” Jpn. J. Appl. Phys. 59, 084002 (2020).
- J. T. Asubar, S. Kawabata, H. Tokuda, A. Yamamoto, and M. Kuzuhara, “Enhancement-mode AlGaN/GaN MIS-HEMTs with high Vth and high Idmax using recessed-structure with regrown AlGaN barrier,” IEEE Electron Device Lett. 41, 693 (2020).
- A. Yamamoto, K. Kanatani, N. Yoneda, J. T. Asubar, H. Tokuda, and M. Kuzuhara, “Enhancement-mode AlGaN/GaN vertical trench metal-insulator-semiconductor high-electron-mobility transistors with ahigh drain current fabricated using the AlGaN regrowth technique,” Phys. Status Solidi A 217, 1900622 (2020).
- H. Tokuda, S. Harada, J. T. Asubar, and M. Kuzuhara, “Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes,” Jpn. J. Appl. Phys. 58, 106503 (2019).
- M. C. S. Escano, J. T. Asubar, Z. Yatabe, M. Y. David, M. Uemura, H. Tokuda, Y. Uraoka, M. Kuzuhara, and M. Tani, “On the presence of Ga2O sub-oxide in high pressure water vapor annealed AlGaN surface by combined XPS and first-principle methods,” Appl. Surf. Sci. 481, 1120 (2019).
- A. Yamamoto, K. Kanatani, S. Makino, and M. Kuzuhara, “Metalorganic vapor phase epitaxial growth of AlGaN directly on reactive-ion etching-treated GaN surfaces to prepare AlGaN/GaN heterostructure with high electron mobility (~1500 cm2V-1s-1): Impacts of reactive-ion etching-damaged layer removal,” Jpn. J. Appl. Phys. 57, 125501 (2018).
- H. Tokuda, K. Suzuki, J. T. Asubar, and M. Kuzuhara, “Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe,” Jpn. J. Appl. Phys. 57, 071001 (2018).
- R. Hattori, O. Oku, R. Sugie, K. Murakami, and M. Kuzuhara, “Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy,” Appl. Phys. Express 11, 075501 (2018).
- T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara, “Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron transistors,” Appl. Phys. Express 11, 054102 (2018).
- A. Yamamoto, S. Makino, K. Kanatani, and M. Kuzuhara, “AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2V-1s-1),” Jpn. J. Appl. Phys. 57, 045502 (2018).
- S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara, “Correlation of AlGaN/GaN HEMTs electroluminescence characteristics with current collapse,” Appl. Phys. Express 11, 024101 (2018).
- H. Tokuda, J. T. Asubar, and M. Kuzuhara, “Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors,” Jpn. J. Appl. Phys. 56, 104101 (2017).
- H. Tokuda, J. T. Asubar, and M. Kuzuhara, “AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5×1010 achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator,” Jpn. J. Appl. Phys. 55, 120305 (2016).
- M. Kuzuhara, J. T. Asubar, and H. Tokuda, “AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation,” Jpn. J. Appl. Phys. 55, 070101 (2016).
- A. Yamamoto, K. Kodama, N. Shigekawa, T. Matsuoka, and M. Kuzuhara, “Low-temperature growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst,” Jpn. J. Appl. Phys. 55, 05FD04 (2016).
- J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara, “Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures,” Jpn. J. Appl. Phys. 55, 04EG07 (2016).
- J. T. Asubar, Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara, “Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing,” IEEE Trans. Electron Devices 62, 2423 (2015).
- A. Yamamoto, Md. T. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara, “Thick (~1 µm) p-type InxGa1-xN (x~0.36) grown by MOVPE at a low temperature (~570 ºC),” Phys. Status Solidi B 252, 909 (2015).
- M. Kuzuhara, and H. Tokuda, “Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications,” IEEE Trans. Electron Devices 62, 405 (2015).
- A. Yamamoto, Md. T. Hasan, K. Kodama, N. Shigekawa, M. Kuzuhara, “Growth temperature dependent critical thickness for phase separation in thick InxGa1-xN (x=0.2–0.4),” J. Crystal Growth 419, 64 (2015).
- M. Hatano, Y. Taniguchi, S. Kodama, H. Tokuda, and M. Kuzuhara, “Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack,” Appl. Phys. Express 7, 044101 (2014).
- N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, H. Tokuda, and M. Kuzuhara, “AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation,” Electronics Lett. 50, 211 (2014).
- A. Yamamoto, Md. T. Hasan, A. Mihara, N. Narita, N. Shigekawa, and M. Kuzuhara, “Phase separation of thick (>1 μm) InGaN (x > 0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN,” Appl. Phys. Express 7, 035502 (2014).
- Md. T. Hasan, T. Asano, H. Tokuda, and M. Kuzuhara, “Current collapse suppression by gate field plate in AlGaN/GaN HEMTs,” IEEE Electron Device Lett. 34, 1379 (2013).
- H. Tokuda, T. Kojima, and M. Kuzuhara, “A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures,” Appl. Phys. Lett. 101, 082111 (2012).
- M. Hatano, N. Yafune, H. Tokuda, Y. Yamamoto, S. Hashimoto, K. Akita, and M. Kuzuhara, “Superior DC and RF performance of AlGaN-channel HEMT at high temperature,” IEICE Trans. Electron. E95-C, 1332 (2012).
- H. Tokuda, T. Kojima, and M. Kuzuhara, “Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures,” Appl. Phys. Lett. 101, 262104 (2012).
- Md. T. Hasan, H. Tokuda, and M. Kuzuhara, “Surface barrier height lowering at above 540K in AlInN/AlN/GaN heterostructures,” Appl. Phys. Lett. 99, 132102 (2011).
- N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara, “Low-resistive ohmic contacts for AlGaN channel high-electron-mobility transistors using Zr/Al/Mo/Au metal stack,” Jpn. J. Appl. Phys. 50, 100202 (2011).
- H. Tokuda, M. Hatano, N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara, “High Al composition AlGaN-channel high-electron-mobility transistor on AlN substrate,” Appl. Phys. Express 3, 121003 (2010).
- H. Tokuda, J. Yamazaki, and M. Kuzuhara, “High temperature electron transport properties in AlGaN/GaN heterostructures,” J. Appl. Phys. 108, 104509 (2010).
- H. Tokuda, K. Kodama, and M. Kuzuhara, “Temperature dependence of electron concentration and mobility in n-GaN measured up to 1020 K,” Appl. Phys. Lett. 96, 252103 (2010).
- N. Yafune, M. Nagamori, H. Chikaoka, F. Watanabe, K. Sakuno, and M. Kuzuhara, “Low-resistivity V/Al/Mo/Au ohmic contacts on AlGaN/GaN annealed at low temperatures,” Jpn. J. Appl. Phys. 49, 04DF10 (2010).