研究業績

  1. R. S. Low, J. T. Asubar, A. Baratov, S. Kamiya, I. Nagase, S. Urano, S. Kawabata, H. Tokuda, M. Kuzuhara, Y. Nakamura, K. Naito, T. Motoyama, and Z. Yatabe, “GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and enivironmental-friendly mist-CVD technique,” Appl. Phys. Express 14, 031004 (2021). 
  2. K. C. Herbert, K. Shibata, J. T. Asubar, and M. Kuzuhara, “Stoichiometric imbalances in Mg-implanted GaN,” Jpn. J. Appl. Phys. 60, 066504 (2021).
  3. A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, Y. Honda, S. Roy, H. Amano, B. Sarkar, “Generalized frequency dependent small signal model for high frequency analysis of AlGaN/GaN MOS-HEMTs,” IEEE J. Electron Devices Soc. 9, 570 (2021).
  4. T. Tanaka, N. Ito, S. Takano, M. Kuzuhara, and K. Nakahara, “Deep-donor-induced suppression of current collapse in an AlGaN-GaN heterojunction structure on Si,” IEICE Trans. Electronics, E103-C, 186 (2020).
  5. H. Tokuda, J. T. Asubar, and M. Kuzuhara, “Design consideration for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs,” Jpn. J. Appl. Phys. 59, 084002 (2020).
  6. J. T. Asubar, S. Kawabata, H. Tokuda, A. Yamamoto, and M. Kuzuhara, “Enhancement-mode AlGaN/GaN MIS-HEMTs with high Vth and high Idmax using recessed-structure with regrown AlGaN barrier,” IEEE Electron Device Lett. 41, 693 (2020).
  7. A. Yamamoto, K. Kanatani, N. Yoneda, J. T. Asubar, H. Tokuda, and M. Kuzuhara, “Enhancement-mode AlGaN/GaN vertical trench metal-insulator-semiconductor high-electron-mobility transistors with ahigh drain current fabricated using the AlGaN regrowth technique,” Phys. Status Solidi A 217, 1900622 (2020).
  8. H. Tokuda, S. Harada, J. T. Asubar, and M. Kuzuhara, “Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes,” Jpn. J. Appl. Phys. 58, 106503 (2019).
  9. M. C. S. Escano, J. T. Asubar, Z. Yatabe, M. Y. David, M. Uemura, H. Tokuda, Y. Uraoka, M. Kuzuhara, and M. Tani, “On the presence of Ga2O sub-oxide in high pressure water vapor annealed AlGaN surface by combined XPS and first-principle methods,” Appl. Surf. Sci. 481, 1120 (2019).
  10. A. Yamamoto, K. Kanatani, S. Makino, and M. Kuzuhara, “Metalorganic vapor phase epitaxial growth of AlGaN directly on reactive-ion etching-treated GaN surfaces to prepare AlGaN/GaN heterostructure with high electron mobility (~1500 cm2V-1s-1): Impacts of reactive-ion etching-damaged layer removal,” Jpn. J. Appl. Phys. 57, 125501 (2018).
  11. H. Tokuda, K. Suzuki, J. T. Asubar, and M. Kuzuhara, “Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe,” Jpn. J. Appl. Phys. 57, 071001 (2018).
  12. R. Hattori, O. Oku, R. Sugie, K. Murakami, and M. Kuzuhara, “Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy,” Appl. Phys. Express 11, 075501 (2018).
  13. T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara, “Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron transistors,” Appl. Phys. Express 11, 054102 (2018).
  14. A. Yamamoto, S. Makino, K. Kanatani, and M. Kuzuhara, “AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2V-1s-1),” Jpn. J. Appl. Phys. 57, 045502 (2018).
  15. S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara, “Correlation of AlGaN/GaN HEMTs electroluminescence characteristics with current collapse,” Appl. Phys. Express 11, 024101 (2018).
  16. H. Tokuda, J. T. Asubar, and M. Kuzuhara, “Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors,” Jpn. J. Appl. Phys. 56, 104101 (2017).
  17. H. Tokuda, J. T. Asubar, and M. Kuzuhara, “AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5x1010 achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator,” Jpn. J. Appl. Phys. 55, 120305 (2016).
  18. M. Kuzuhara, J. T. Asubar, and H. Tokuda, “AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation,” Jpn. J. Appl. Phys. 55, 070101 (2016).
  19. A. Yamamoto, K. Kodama, N. Shigekawa, T. Matsuoka, and M. Kuzuhara, “Low-temperature growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst,” Jpn. J. Appl. Phys. 55, 05FD04 (2016).
  20. J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara, “Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures,” Jpn. J. Appl. Phys. 55, 04EG07 (2016).
  21. J. T. Asubar, Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara, “Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing,” IEEE Trans. Electron Devices 62, 2423 (2015).
  22. A. Yamamoto, Md. T. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara, "Thick (~1 µm) p-type InxGa1-xN (x~0.36) grown by MOVPE at a low temperature (~570 ºC)," Phys. Status Solidi B 252, 909 (2015).
  23. M. Kuzuhara, and H. Tokuda, “Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications,” IEEE Trans. Electron Devices 62, 405 (2015).
  24. A. Yamamoto, Md. T. Hasan, K. Kodama, N. Shigekawa, M. Kuzuhara, “Growth temperature dependent critical thickness for phase separation in thick InxGa1-xN (x=0.2–0.4),” J. Crystal Growth 419, 64 (2015).
  25. M. Hatano, Y. Taniguchi, S. Kodama, H. Tokuda, and M. Kuzuhara, “Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack,” Appl. Phys. Express 7, 044101 (2014).
  26. N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, H. Tokuda, and M. Kuzuhara, “AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation,” Electronics Lett. 50, 211 (2014).
  27. A. Yamamoto, Md. T. Hasan, A. Mihara, N. Narita, N. Shigekawa, and M. Kuzuhara, “Phase separation of thick (>1 μm) InGaN (x > 0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN,” Appl. Phys. Express 7, 035502 (2014).
  28. Md. T. Hasan, T. Asano, H. Tokuda, and M. Kuzuhara, “Current collapse suppression by gate field plate in AlGaN/GaN HEMTs,” IEEE Electron Device Lett. 34, 1379 (2013).
  29. H. Tokuda, T. Kojima, and M. Kuzuhara, “A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures,” Appl. Phys. Lett. 101, 082111 (2012).
  30. M. Hatano, N. Yafune, H. Tokuda, Y. Yamamoto, S. Hashimoto, K. Akita, and M. Kuzuhara, “Superior DC and RF performance of AlGaN-channel HEMT at high temperature,” IEICE Trans. Electron. E95-C, 1332 (2012).
  31. H. Tokuda, T. Kojima, and M. Kuzuhara, “Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures,” Appl. Phys. Lett. 101, 262104 (2012).
  32. Md. T. Hasan, H. Tokuda, and M. Kuzuhara, “Surface barrier height lowering at above 540K in AlInN/AlN/GaN heterostructures,” Appl. Phys. Lett. 99, 132102 (2011).
  33. N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara, “Low-resistive ohmic contacts for AlGaN channel high-electron-mobility transistors using Zr/Al/Mo/Au metal stack,” Jpn. J. Appl. Phys. 50, 100202 (2011).
  34. H. Tokuda, M. Hatano, N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara, “High Al composition AlGaN-channel high-electron-mobility transistor on AlN substrate,” Appl. Phys. Express 3, 121003 (2010).
  35. H. Tokuda, J. Yamazaki, and M. Kuzuhara, “High temperature electron transport properties in AlGaN/GaN heterostructures,” J. Appl. Phys. 108, 104509 (2010).
  36. H. Tokuda, K. Kodama, and M. Kuzuhara, “Temperature dependence of electron concentration and mobility in n-GaN measured up to 1020 K,” Appl. Phys. Lett. 96, 252103 (2010).
  37. N. Yafune, M. Nagamori, H. Chikaoka, F. Watanabe, K. Sakuno, and M. Kuzuhara, “Low-resistivity V/Al/Mo/Au ohmic contacts on AlGaN/GaN annealed at low temperatures,” Jpn. J. Appl. Phys. 49, 04DF10 (2010).

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2021.11.19.Fri

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査読付き論文(2010以降)

R. S. Low, J. T. Asubar, A. Baratov, S. Kamiya, I. Nagase, S. Urano, S. Kawabata, H. Tokuda, M. Ku…

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