研究業績

  • 書籍  Books
  • 14) 次世代パワー半導体の開発動向と応用展開 第2章4(2021)シーエムシ―出版、鹿田真一 ISBN978-4-7813-1613-0
  • 13) DLCの基礎と応用展開  第2章11 (2016)シーエムシ―出版、鹿田真一
  •        ISBN978-7813-1167-8
  • 12) 次世代パワー半導体の高性能化と産業展開 第7章(2015)シーエムシ―出版、鹿田真一
  •        ISBN978-4-7813-1076-3
  • 11) パワーエレクトロニクスの新展開 3章、普及版 (2015) シーエムシ―出版、鹿田真一
  •        ISBN978-4-7813-1029-9
  • 11) パワーエレクトロニクスの新展開 3章、 (2009) シーエムシ―出版、鹿田真一
  •        ISBN978-4-7813-0137-2
  • 9) ダイヤモンドエレクトロニクスの最前線 普及版 (監修 及び17章)(2014)シーエムシ―出版、 鹿田真一
  •        ISBN978-4-7813-0889-0
  • 10) 次世代パワー半導体 第二編 第三章、 (2009)エヌティーエス出版、鹿田真一
  •       ISBN978-4-86043-262-1
  • 9) ダイヤモンドエレクトロニクスの最前線 (監修 及び17章)(2008) シーエムシ―出版、監修 藤森直治、鹿田真一 17章 鹿田真一
  •       ISBN978-4-7813-0049-8
  • 8)ダイヤモンド技術総覧 ISBN978-4-9902720-9-8 (2004)6章5、9章3エヌジーティー出版、 鹿田真一
  • 7) "Diamond Surface Acoustic Wave Device", Thin Film Diamond, Chapter 8, (2004) Elsevier Inc. Academic Press,   S. Shikata, H. Nakahata
  •       ISBN0-12-752186-0
  • 6) 弾性波デバイス技術   3章、  (2004)オーム社 、鹿田真一
  •       ISBN4-274-03630-8
  • 5) 高周波用電子材料とデバイス   第4章、 (2003)  TIC社、鹿田真一
  • 4) 先端高機能材料     5編、  (2001) NGT社 鹿田真一
  • 3) "Semiconduting Diamond and Diamond Devices",  Electric Refractory Materials,   Chapter 17,  (2000) Marcel Dekker, Inc. New York,  S. Shikata and N.Fujimori
  •        ISBN0-8247-0049-X
  • 2) "CVD Diamond for Surface Acoustic Wave Filters", Low-Pressure Synthetic Diamond, Chapter 14 (1998)Springer Verlag、 Berlin Heidelberg, S.Shikata
  •        ISBN3-540-63619-6
  • 1) 高周波セラミックス材料とその応用   4章、 (1998)  TIC社、鹿田真一
  • Thin Film Diamond400Electric Refractory Materials弾性波デバイスダイヤモンドエレクトロニクスダイヤエレ普及版
  • パワーエレクトロニクスパワーエレ普及版次世代パワー半導体06101026_5577925305fab
 
  • 査読論文  Papers
  • 2021
  • 220) “Analysis method of diamond dislocation vectors using reflectance mode X-ray topography”,
  • S.Shikata, K.Miyajima, and N.Akashi
  • Diam.Relat.Mat., 118 (2021) 108502
  • doi.org/10.1016/j.diamond.2021.108502
  • 219) “Forbidden X-ray diffraction of highly B doped diamond substrate”,
  • K. Kouda, Y.Sato, M.Takeuchi, H.Takahashi and S. Shikata
  • Jap.J.Appl.Phys., 60 (2021) 071002
  • doi.org/10.35848/1347-4065/ac0b23
  • 218) “Polarized Raman spectroscopy of phophorous doped diamond films”,
  • M.Matsuoka, Y.Tsuchida, N.Ohtani, T.Yamada, S.Koizumi and S.Shikata
  • Diam.Relat. Mat., 114 (2021) 108283
  • doi.org/10.1016/j.diamond.2021.108283
  • 217) “High frequency surface acoustic wave resonator with ScAlN / hetero-epitaxial diamond”,
  • Y. Kobayashi , T. Tsuchiya, M. Okazaki, Y. Asao , K. Hashimoto, and S. Shikata
  • Diam. Relat. Mat., 111 (2021) 108190
  • doi.org/10.1016/j.diamond.2020.108190
  • 2020
  • 216) “Influence of threading dislocation on diamond Schottky barrier diode characteristics”,
  • N.Akashi, N.Fujimaki, and S.Shikata
  • Diam.Relat..Mat., 109 (2020) 108024
  • doi.org/10.1016/j.diamond.2020.108024
  • 215) “X-ray absorption near edge structure and extended X-ray absorption fine structure study of P doped (111) diamond”,
  • S.Shikata, K.Yamaguchi , A.Fujiwara, Y.Tamenori, K.Tsuruta, T.Yamada, S.S.Nicley, K.Haenen and S.Koizumi
  • Diam.Relat.Mat., 105 (2020)107769
  • doi.org/10.1016/j.diamond.2020.107769
  • 214) “Dislocation vector analysis method of deep dislocation having c-axis segment in diamond”,
  • S.Shikata and N.Akashi,
  • Material Science Forum, 1004 (2020) PP.519-524
  • 213)“Intrinsic exciton transitions of isotopically purified 13C studied by photoluminescence and transmission spectroscopy”,
  • R.Ishii, S. Shikata, T. Teraji, H. Kanda, H. Watanabe, M. Funato, and Y. Kawakami,
  • Jap.J.Appl.Phys., 59 (2020) 010903
  • doi.org/10.7567/1347-4065/ab5b77
  • 212)“Evaluation of diamond mosaic wafer crystallinity by electron backscatter diffraction”,
  • A.Matsushita, N. Fujimori, Y. Tsuchida, N. Ohtani, D. Dojima, K. Koide, T. Kaneko and S.Shikata 
  • Diam.Relat.Mat., 101 (2020) 107558
  • doi.org/10.1016/j.diamond.2019.107558
  • 2019
  •  211)“Removing Non-Size-Dependent Electron Spin Decoherence of Nanodiamond Quantum Sensorsby Aerobic Oxidation”,
  • R. Tsukahara, M. Fujiwara, Y. Sera, Y.Nishimura,Y. Sugai, C. Jentgens, Y. Teki, H.Hashimoto, and S.Shikata,
  • ACS Applied Nano Materials, 2 (2019) pp.3701-3710
  • 210)“Evaluation of highly B doped high pressure and high temperature diamond crystallinity by electron backscatter diffraction”,
  • A.Matsushita, Y.Tsuchida, M.Matsuoka, N.Ohtani, K.Ashida, D.Dojima, K.Koide, T.Kaneko and S.Shikata,
  • Jap.J.Appl.Phys., 58,  (2019)065504
  • doi:10.7567/1347-4065/ab1c8a
  • 209)“Monitoring spin coherence of single nitrogen-vacancy centers in nanodiamonds during pH changes in aqueous buffer solutions”,
  • M.Fujiwara, R.Tsukahara,Y.Sera, H.Yukawa,Y.Baba, S.Shikata, and H.Hashimoto,
  • RSC Advances, 9 (2019) pp.12606-12614
  • doi: 10.1039/c9ra02282a
  • 208) “Dislocation analysis of homoepitaxial diamond (001) film grown with oxygen feeding by synchrotron radiation light X-ray topography”,
  • S.Shikata, Y. Matsuyama, and T.Teraji
  • Jap.J.Appl.Phys.,58(2019)045503 doi: 10.7567/1347-4065/ab0541
  • 2018
  • 207) “Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy”,
  • R.Ishii, S.Shikata, T.Teraji, H.Kanda, H. Watanabe, M. Funato, and Y.Kawakami,
  • Jap.J.Appl.Phys.,58 (2018) 010904           http://iopscience.iop.org/article/10.7567/1347-4065/aaef3e/meta
  • 206)Observation of rotational Brownian motion of single diamond nanoparticles”,
  • M.Fujiwara, Y.Shikano, R.Tsukahara, S.Shikata, and H.Hashimoto,
  • Scientific Reports, 8 (2018) 14773           DOI:10.1038/s41598-018-33041-6
  • 205) “Precise measurements of diamond lattice constant”,
  • S.Shikata, T.Tanno, T.Teraji, H.Kanda,T.Yamada and J.Kushibiki,
  • Jap.J.Appl.Phys., 57(2018) 111301          https://doi.org/10.7567/JJAP.57.111301
  • 204) ” Influence of dislocations to the diamond SBD reverse characteristics”,
  • N.Akashi, A.Seki, H.Saitoh, F.Kawai and S.Shikata,
  • Material Science Forum, 924(2018) pp.212-216  https://doi.org/10.4028/www.scientific.net/MSF.924.212
  • 203) “Dislocation analysis of p type and insulating HPHT diamond seed crystals”,
  • S.Shikata, E.Kamei, K.Yamaguchi, Y. Tsuchida and H. Takahashi,
  • Material Science Forum, 924(2018) pp.208-211   https://doi.org/10.4028/www.scientific.net/MSF.924.208
  • 202) “Prospect and challenges of diamond wafer toward power electronics”,
  • S.Shikata,
  • Int’l J. Automation Technol., 12 (2018) pp.175-178 doi: 10.20965/ijat.2018.p0175
  • 2017
  • 201)“Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate”,
  • H.Umezawa, S.Shikata, Y.Kato, Y.Mokuno, A.Seki, H.Suzuki, T.Bessho,
  • Jpn. J. Appl. Phys., 56 (2017) 011301
  • 200) “X-ray absorption fine structure study on heavily P doped (111) and (001) diamond”,
  • S.Shikata, K.Yamaguchi, A.Fujiwara, Y.Tamenori, J.Yahiro, M.Kunisu and T.Yamada
  • Applied Physics Letters, 110 (2017) 072106http://dx.doi.org/10.1063/1.4975062
  • 199)“Evaluation of p+ HPHT diamond substrate for power device application”,
  • S.Shikata, Y.Tsuchida, K.Yamaguchi, E.Kamei, D.Fukunaga, Y.Tabuchi and N.Ohtani,
  • Diamond and Related Materials, 73(2017) pp.241-247
  • 2016
  • 198)“High performance diamond radiation detectors fabricated using productive lift-off method”,
  • T.Shimaoka, J.Kaneko, M.Tsubota, H.Watanabe, A.Chayahara, H.Umezawa and S.Shikata,
  • European Physical Letter, 113 (2016) 62001
  • 197)“Single crystal diamond wafer for high power electronics”,
  • S.Shikata,
  • Diamond and Related Materials,  65 (2016) pp.168-175
  • Open access: http://www.sciencedirect.com/science/article/pii/S0925963516300759
  • 196)“Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition”,
  • H.Watanabe, H.Umezawa,T.Ishikawa, K.Kaneko, S.Shikata, J.I.Hayase, and K.M.Itoh,
  • IEEE Transactions on Nanotechnology, 15 (2016) pp.614-618
  • 195)“A diamond 14MeV neutron energy spectrometer with energy resolusion”,
  • T.Shimaoka, J.H.Kaneko, K.Ochiai,M.Tsubota,H.Shinmmyo, A.Chayahara, H.Umezawa, H.Watanabe, S.Shikata, M.Isobe and M.Osakabe,
  • Review of Scientific Instruments, 87(2016) 023503
  • 194) “Investigation of Electrically-active Deep Levels in Single-crystalline Diamond by Particle-induced Charge Transient Spectroscopy”,
  • W.Kada, Y. Kambayashi, Y.Ando, S.Onoda, H.Umezawa, Y. Mokuno, S.Shikata, Makino, M. Koka, O.Hanaizumi, T.Kamiya, and T.Ohshima,
  • Instruments and Methods in Physics Research B, 372 (2016) pp.151-155
  • 193) “Whole diamond stylus for the long play phonograph”,
  • S.Shikata, S.Yamamoto, K.Maeda, K.Nakagawa, and S.Kitaoka,
  • Diamond and Related Materials, 63(2016) pp.232-235
  • 192) “Boron inhomogeneity of single-crystal diamond substrates caused by structural defects: confocal micro-Raman mapping investigations”,
  • K. Srimongkon, S.Ohmagari, Y. Kato, V.Amornkitbamrung, and S.Shikata,
  • Diamond and Related Materials, 63 (2016) pp.21-25
  • 191) “Crystal Orientation Dependence of Piezoresistivity in Boron Doped Single Crystalline Diamond Films”,
  • K.Takenaka, H. Umezawa, S.Kato, A. Chayahara, and S.Shikata,
  • Diamond and Related Materials, 63 (2016) pp.218-221
  • 190) “Characterizations of etch pits formed on single crystal diamond surface using oxygen/hydrogen plasma surface treatment”,
  • N. Tsubouch, Y. Mokuno, and S.Shikata,
  • Diamond and Related Materials, 63 (2016) pp.43-46
  • 2015
  • 189) “Unintentional tungsten incorporation in diamond during hot-filament chemical vapor deposition”,
  • S.Ohmagari, K.Srimongkon, V.Amornkitbamrung, H.Yamada, A.Chayahara, and S.Shikata,
  • Trans. Mat. Soc. Japan 40 (2015) pp.47-50
  • 188) “Status of beam line detectors for the Big RIPS fragment separator at RIKEN RI Beam Factory: issues on high rates and resolution”,
  • Y. Sato, N. Fukuda, H. Takeda, D. Kameda, H. Suzuki, Y. Shimizu, D.S.Ahn, D. Murai, N. Inabe, T. Shimaoka, M.Tsubota, J.H.Kaneko, A.Chayahara, H.Umezawa, S.Shikata, H.Kumagai, H. Murakami, H. Sato, K. Yoshida, and T. Kubo,
  • J. Phy. Soc. Jpn, 6 (2015) 030124
  • 187) “Response measurement of single crystal CVD diamond radiation detector for intense X-rays aiming at burn-history measurement on an inertial confinement fusion with fast ignition”,
  • T. Shimaoka, J.H. Kaneko, Y. Arikawa, M. Isobe, Y. Sato, M. Tsubota, T. Nagai, S. Kojima, Y. Abe, T. Sakata, S. Fujioka, M. Nakai, H. Shiraga, H. Azechi, A. Chayahara, H. Umezawa, and S. Shikata,
  • Rev. Sci. Insturm., 86 (2015) 053503
  • 186) ” High-temperature characteristics of charge collection efficiency using single CVD diamond detectors”,
  • M.Tsubota, J.H. Kaneko, D.Miyazaki, T. Shimaoka, K.Ueno, T.Tadokoro, A.Chayahara, H.Watanabe, Y.Kato, S.Shikata, and H. Kuwabara,
  • Nucl. Instrum. Meth. A, 789(2015)50-56,.
  • 185) “Low resistivity p+ diamond (100) films fabricated by hot-filament chemical vapor deposition”,
  • S.Ohmagari, K.Srimongkon, H.Yamada, H.Umezawa, N.Tsubouchi, A.Chayahara, S.Shikata and Y.Mokuno,
  • Diamond and Related Materials, 58 (2015) pp.110-114
  • 184) “Friction modification by shifting of phonon energy dissipation in solid atoms”,
  • A.Kajita, M.Tohyama, H.Washizu, T.Ohmori, H.Watanabe and S.Shikata,
  • Tribology,10 (2015)pp.156-161
  • (Paper Award 2015 Japanese Society of Tribologist)
  • 183)”Effects of crystallographic orientation on the homoepitaxial overgrowth on tiled single crystal diamond clones”,
  • H. Yamada, A. Chayahara, Y.Mokuno, Y. Kato, and S.Shikata,
  • Diamond and Related Materials, 57 (2015) pp.17-21
  • 1882) “X-ray topographic study of defect in p− diamond layer of Schottky barrier diode”,
  • Y.Kato, H. Umezawa, and S.Shikata,
  • Diamond and Related Materials, 57(2015) pp.22-27
  • 181) “Numerical microwave plasma discharge study for the growth of large single-crystal diamond”,
  • H.Yamada, A. Chayahara, Y.Mokuno, and S.Shikata,
  • Diamond and Related Materials, 54, April (2015) pp.9-14
  • 2014
  • 180) “Radiation hardness of single crystal CVD diamond detector for MeV energy protons “,Y. Sato, T. Shimaoka, J.H. Kaneko, H. Murakami, M. Isobe, M. Osakabe, M. Tsubota, A. Chayahara, H. Umezawa, S. Shikata, Nucl. Instrum. Meth. A, 784(2014)147-150,.
  • 179) “Diamond Metal-Semiconductor Field Effect Transistor With Breakdown Voltage Over 1.5kV”,H.Umezawa, T.Matsumoto and S.Shikata, IEEE Electron Device Letters, 35,(2014) pp.1112-1114
  • 178)“Large-area high-quality single crystal diamond”, M.Schreck , J.Asmussen , S.Shikata , J-C. Arnault ,and N. Fujimori, MRS Bulletin 39,(2014)pp.504-510
  • 177) “Evaluation method for grown-in dislocations in CVD single crystal diamond using plasma surface treatment”, N.Tsubouchi and S. Shikata, Jap.J.Appl.Phys., 53(2014)068010
  • 176) ”Nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by lift-off process”, Y. Mokuno, Y Kato, N. Tsubouchi, A. Chayahara, H. Yamada, and S. Shikata, Applied Physics Letters, 104 (2014) 252109
  • 175) ”Characterization of free-standing single-crystal diamond prepared by hot-filament chemical vapor deposition”, S.Ohmagari, H.Yamada, H.Umezawa,A.Chayahara,T.Teraji and S.Shikata, Diamond and Related Materials, 48(2014) pp.19-23
  • 174) “Pulse shape distortion of output signals from single-crystal CVD diamond detector in few-GHz broadband amplifiers”,Y.Sato, T.Shimaoka, J.H. Kaneko, H.Murakami, D.Miyazaki, M.Tsubota, A.Chayahara, H.Umezawa, and S.Shikata, Euro. Phys. Let., 106(2014) 22001
  • 173)” X-ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-irradiated Precision Polished Substrate”,Y.Kato, H.Umezawa and S.Shikata,   Acta physica polonica A,125 (2014)pp. 969-971
  • 172) “Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications”,H.Umezawa, S.Shikata, and T.Funaki, Jap. J. Appl. Phys., 53 (2014) 05FP06
  • 171) “Investigation of Surface Magnetic Noise by Shallow Spins in Diamond”, T. Rosskopf, A. Dussaux, K. Ohashi, M. Loretz, R. Schirhagl, H. Watanabe, S. Shikata, K. M. Itoh, and C. L. Degen,Phys. Rev. Lett. 112, (214)147602
  • 170) “Effect on Surface Paramagnetism on Spin Relaxation in Nitrogen-Vacancy Centers in Diamond”,T.Rosskopf, A.Dussaux, K.Ohashi, M.Loretz, R.Schirhagl, H.Watanabe, S.Shikata, K.M.Itoh, and C.L.Degen, Phys.Rev.Lett., 112, 147602 (2014)
  • 169)”A 2-in. mosaic wafer made of a single-crystal diamond”, H.Yamada, A.Chayahara, Y.Mokuno, Y.Kato and S.Shikata, Appl. Phys. Lett. 104 , 102110 (2014)
  • 2013
  • 168) “1 ohm on-resistance diamond vertical Schottky barrier diode at 250C”, H.Umezawa, Y.Kato and S.Shikata, Applied Physics Express, 6 (2013) 011302
  • 167)”Atomic force microscopy observations of a single crystal diamond surface lifted-off via ion implantation”, Y. Mokuno, A. Chayahara, N. Tsubouchi, H. Yamada and S. Shikata, Diamond and Related Materials, 31(2013) pp. 6-9
  • 166) “Effect of an Ultraflat Substrate on the Epitaxial Growth of Chemical Vapor Deposited Diamond”, Y.Kato, H.Umezawa, S.Shikata and M.Touge, Applied Physics Express,6 (2013)025506
  • 165) “Uniform growth and repeatable fabrication of inch size wafers of single-crystal diamond”, H.Yamada, A.Chayahara, Y.Mokuno, N.Tsubouchi and S.Shikata, Diamond and Related Materials, 33(2013)pp.27-31
  • 164) “Low propagation loss in a one-port SAW resonator fabricated on single-crystal diamond for super high frequency applications”, S.Fujii, T.Odawara, H.Yamada, T.Omori, K.Hashimoto, H.Torii, H.Umezawa and S.Shikata, IEEE Ultrasonics, Ferroelectrics and frequency control, 60 (2013)pp.986-992
  • 163) “Vertical Diamond Schottky Barrier Diode Fabricated on Insulating Diamond Substrate Using Deep Etching Technique”, M.Nagase, H.Umezawa and S.Shikata, IEEE Trans. Electron Device,60 (2013)pp.1416-1420
  • 162) “High-sensitivity magnetometry based on quantum beats in diamond nitrogen-vacancy centers”,K.Fang, V.M. Acosta, C. Santori, Z.Huang, K. Itoh, H.Watanabe, S. Shikata,and R. G. Beausoleil, Phys.Review Lett., 110 (2013) 130802
  • 161) ”One-port SAW Resonators Fabricated on Single-Crystal Diamond”, S.Fujii, H.Yamada, T. Omori, K.Hashimoto, H. Torii, H.Umezawa, and S. Shikata, IEEE MTT-S, (2013) pp. TU1D-6-1~4
  • 160) “Development of diamond power electronics devices”, S.Shikata, and H.Umezawa, Synthesiology, 6 (2013) pp.152-161
  • 159) “Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model”, A.Nawawi, K.J.Tseng, Rusli, G.A.J.Amartunga, H.Umezawa and S.Shikata, Diamond and Related Materials, 35(2013)pp.1-6
  • 158) “Design and optimization of planar mesa termination for diamond Schottky barrier diodes”, A.Nawawi, K.J.Tseng, Rusli, G.A.J.Amartunga, H.Umezawa and S.Shikata, Diamond and Related Materials, 35 (2013) pp.51-57
  • 157) "Negatively Charged Nitrogen-Vacancy Centers in a 5 nm Thin 12C Diamond Films,” K. Ohashi, T. Rosskopf, H.Watanabe, M. Loretz, Y. Tao, R. Hauert, S. Tomizawa, T. Ishikawa, J. Ishi-Hayase, S.Shikata, C. L. Degen, and K. M. Itoh, Nano Lett. 13, (2013), pp. 4733-4738.
  • 156) “Isotope composition dependence of the band-gap energy in diamond”,H.Watanabe, T.Koretsune, S.Nakashima, S.Saito and S.Shikata, Phsical Review B88, (2013) 205420
  • 155) “Leakage current analysis of diamond Schottky barrier diodes by defect imaging”,H.Umezawa, N.Tatsumi,Y.Kato and S.Shikata, Diamond and Related Materials, 40(2013)pp.56-59
  • 154) “Structure, radiation damage and annealing effects in diamond implanted with a high fluence of a few MeV carbons”, N.Tsubouchi and S.Shikata, Nuclear Instruments and Methods in Physics Research B315(213)pp.165-168
  • 153)“One-port SAW Resonators Fabricated on Single-Crystal Diamond,” S.Fujii, H.Yamada, T.Omori, K.Hashimoto, H.Torii, H.Umezawa, and S.Shikata, International Microwave Symp. (2013) TU-1D6-1~4
  • 152) “Pulse height reduction effects of single crystal CVD diamond detector for low-energy heavy ions”,Y. Sato, T. Shimaoka, J.H. Kaneko, H. Murakami, D. Miyazaki, M. Tsubota, A.Chayahara, H.Umezawa, S.Shikata, Euro. Phys. Let., 104(2013)22003 1-4
  • 151) “Optical absorptions, electrical properties and related band structures of diamond with high-dose B, C, N or P implantation at elevated temperatures”, N.Tsubouchi and S.Shikata, Transactions of the Materials Research Society of Japan,38-3,(2013)pp.431-434
  • 2012
  • 150) “High temperature switching operation of a power diamond Schottky barrier diode”, T.Funaki, M.Hirano, H.Umezawa and S.Shikata, IEICE Electronics Express, 9 (2012) pp.1835-1841
  • 149) "High temperature application of diamond power device", H.Umezawa, M. Nagase, Y. Kato and S. Shikata, Diamond and Related Materials 24, (2012) pp. 201-205
  • 148) "Local stress distribution of dislocations in homoepitaxial chemical vapor deposite single-crystal diamond", Y. Kato, H. Umezawa, S. Shikata and T.Teraji, Diamond and Related Materials 23 (2012) pp.109-111
  • 147) "Optical and Spin Coherence Properties of Nitrogen-Vacancy Centers Placed in a 100 nm Thick Isotopically Purified Diamond Layer", T.Ishikawa, K.M.C. Fu, C.Santori, V. M. Acosta, R.G. Beausoleil,H. Watanabe, S.Shikata, and K.M. Itoh, Nano Lett. 12 (4) 2012, pp.2083-2087
  • 146) "Characterization of a sandwich-type large CVD single crystal diamond particle detector fabricated using a lift-off method", N.Tsubouchi, Y.Mokuno, A.Kakimoto, Y.Konno, H.Yamada, A.Chayahara, J.H. Kaneko, F.Fujita and S.Shikata, Diamond and Related Materials 24 (2012) pp.74-77
  • 145) "Growth and evaluation of self-standing CVD diamond single crystals on off-axis (001) surface of HP/HT type IIa substrates", J.H.Kaneko, F.Fujita, Y.Konno, T.Gotoh, N.Nishi, H.Watanabe, A.Chayahara, H.Umezawa, N.Tsubouchi, S.Shikata, M.Isobe, Diamond and Related Materials 26 (2012), pp.45-49
  • 144) "Structural analysis of dislocations in type-IIa single-crystal diamond", Y. Kato, H.Umezawa, H. Yamaguchi,S.Shikata, Diamond and Related Materials 29 (2012), pp.37-41
  • 143) "X-ray Topography Used to Observe Dislocations in Epitaxially Grown Diamond Film", Y. Kato, H.Umezawa, H. Yamaguchi, and S.Shikata, Jpn. J. Appl. Phys. 51 (2012) pp. 090103-1~5
  • 142) "Selective-Area Growth of Thick Diamond Films Using Chemically Stable Masks of Ru/Au and Mo/Au", M.Nagase, K.Watanabe, H.Umezawa, and S.Shikata, Japanese Journal of Applied Physics 51 (2012) 070202
  • 141) "Lattice structure of a freestanding nitrogen doped large single crystal diamond plate fabricated using the lift-off process: X-ray diffraction studies", N.Tsubouchi, H.Umezawa, Y. Mokuno, A.Chayahara and S.Shikata, Diamond and Related Materials, 25(2012) pp.119-123
  • 140) “High Q surface acoustic wave resonators in 2-3GHz range using ScAlN/single crystalline diamond structure”, K.Hashimoto, T.Fujii, S.Sato, T.Omori, C.Ahn, A.Teshigahara, K.Kano, H.Umezawa and S.Shikata, IEEE Ultrasonics Symp. proc. (2012) pp.1926-1929
  • 139) “Fabrication and fundamental characterizations of tiled-clones of single crystal diamond with 1-inch size”, H.Yamada, A.Chayahara, H. Umezawa, N. Tsubouchi, Y. Mokuno and S.Shikata, Diamond and Related Materials 24 (2012) pp.29-33
  • 138) “Freestanding single crystal chemical vapor deposited diamond films produced using a lift-off method: Response to α-particles from 241Am and crystallinity”, N.Tsubouchi, Y.Mokuno, A.Kakimoto, F.Fujita, J.H. Kaneko, H. Yamada, A. Chayahara and S. Shikata, Nucl. Instrum. Methods Phys. Res. B, 286 (2012) pp.313-317
  • 2011
  • 137) “Improvement of crystal quality of a homoepitaxially grown diamond layer by a plasma etching treatment for a diamond substrate”, Yuta Konno, Junichi H Kaneko, Fumiyuki Fujita, Hideyuki Watanabe, Kei Sato, Akinori Kakimoto, Sinichi Shikata, Akira Homma, Michihiro Furusaka, Progress in Nuclear Science and Technology, 1(2011)255
  • 136) "Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence", H.Umezawa, Y.Kato, H.Watanabe, A.M.M.Omer, H.Yamaguchi, and S.Shikata, Diamond and Related Materials 20 (2011) pp 523-526
  • 135) "Developments of elemental technologies to produce inch-size single-crystal diamond wafers", H.Yamada, A. Chayahara, Y. Mokuno, N. Tsubouchi, S. Shikata, and N. Fujimori, Diamond and Related Materials 20 (2011) pp. 616-619
  • 134) "A model of reactive microwave plasma discharge for growth of single-crystal-diamond”, H.Yamada, A.Chayahara, Y.Mokuno and S. Shikata, Japanese Journal of Applied Physics 50 (1), pp. 01AB02-1-6
  • 133) "Characterization of fast switching capability for Diamond Schottky barrier diode", T.Funaki, K.Kodama, H.Umezawa and S.Shikata, Materials Science Forum 679-680, (2011) pp.820-823
  • 132) "Superlattice structures from diamond", H.Watanabe and S.Shikata, Diamond and Related Materials 20 (2011) pp. 980-982
  • 131) "Low propagation loss in a one-port resonator fabricated on single-crystal diamond", S.Fujii, T.Odawara, T.Omori, K.Hashimoto, H.Torii, H.Umezawa, and S.Shikata, IEEE Ultrasonics Symp. Proc. (2011) pp.555-558
  • 130) "Change of structural and electrical properties of diamond with high-dose ion implantation at elevated temperatures: dependences on donor/acceptor impurity species" N.Tsubouchi and S.Shikata, Nucl. Instrum. Methods Phys. Res. B, 286 (2012) pp.303-307
  • 129) “Local stress-strain structure in CVD diamond observed by Raman peakshift mapping”, Y.Kato, H.Umezawa and S.Shikata, MRS proc., (2011)1282-0404
  • 128) “CVD diamond dislocation observed by Xray topography,birefringence image abd cathodoluminescence mapping”, Y.Kato, H.Umezawa, H.Yamaguchi and S.Shikata, MRS proc., (2011) 1282-0519
  • 2010
  • 127) “Fabrication of 1 inch mosaic crystal diamond wafers”, H.Yamada, A.Chayahara, Y. Mokuno, H. Umezawa, S. Shikata, and N.Fujimori , Applied Physics Express, 3,(2010)051301
  • 126) ”Crystallinity of freestanding large undoped single crystal diamond plates produced using pre-ion-implanted substrates and lift-off processes”,Nobuteru Tsubouchi, Y. Mokuno, A. Chayahara and S. Shikata, Diamond and Related Materials 19, (2010)  pp. 1259-1262
  • 125) “Characterization of Schottky barrier diodes on a 0.5-inch single-crystalline CVD diamond wafer” H. Umezawa, Y. Mokuno, H.Yamada, A. Chayahara and S. Shikata, Diamond and Related Materials 19, (2010) pp.208-212
  • 124) “High Temperature Characteristics of Diamond SBDs”, H. Umezawa and S. Shikata, Materials Science Forum, 645-648, (2010) pp.1231-1234
  • 123) “Characteristics of Diamond SBD’s fabricated on half inch size CVD wafer made by the direct wafer  fabrication technique”, S. Shikata, H. Umezawa, H. Yamada, N. Tsubouchi, Y. Mokuno and A. Chayahara, Materials Science Forum, 645-648, (2010) pp.1227-1230
  • 122) ”Parasitic resistance analysis of pseudovertical structure diamond Schottky barrier diode”, R.Kumaresan,Umezawa and S. Shikata, Physica Status Solidi A , 207 (2010) pp.1997-2001
  • 121) “Vertical structure Schottky barrier diode fabrication using insulating diamond substrate”,R.Kumaresan,Umezawa and S. Shikata, Diamond and Related Materials 19, (2010) pp. 1324-1329
  • 120) “Switching characteristics of a diamond Schottky barrier diode”, K.Kodama, T.Funaki, H.Umezawa, and S.Shikata, IEICE Electronics Express, 7, (2010)pp.1246-1251
  • 119) “Resonant field emission from 2D-DOS on hydrogen terminated intrinsic diamond”, T. Yamada, S. Shikata and C. Nebel, Journal of Applied Physics 107, (2010) pp. 013705
  • 118) “Measurement of charge carrier's transportation in a large size self-standing CVD single crystal diamond film fabricated using lift-off method”, F. Fujita, A. Kakimoto, J.H. Kaneko, N. Tsubouchi, Y. Mokuno, A. Chayahara, K. Sato, Y. Konno, A. Homma, S. Shikata, M. Furusaka, Diamond and Related Materials 19, (2010) pp. 162-165
  • 117) “Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD”, Z.B.Feng, A.Chayahara, Y.Mokuno, H. Yamada and S.Shikata, Diamond and Related Materials 19, (2010) pp. 171-173
  • 116) “Surface stress measurement with interference microscopy of thick homoepitaxial single-crystal diamond layers”, Z.B.Feng, A.Chayahara, H.Yamada, Y.Mokuno, N.Tsubouchi and S.Shikata, Diamond and Related Materials, 19, (2010) pp.1453-1456
  • 2009
  • 115) “Microwave plasma generated in a narrow gap to achieve high power efficiency during diamond growth”, H.Yamada, A.Chayahara, Y.Mokuno and S. Shikata, Diamond and Related Materials 18, (2009) pp.117-120
  • 114) “Characterization of crystallinity of a large self-standing homoepitaxial diamond film”, N.Tsubouchi, Y. Mokuno, H.Yamaguchi, N.Tatsumi, A.Chayahara and S.Shikata, Diamond and Related Materials 18, (2009) pp.216-219
  • 113) “Thermally Stable Schottky Barrier Diode by Ru / Diamond”,Kazuhiro Ikeda , H.Umezawa , R.Kumaresan and S.Shikata, Applied Physics Express, 2, (2009) 011202
  • 112) “Device processing, fabrication and analysis of diamond pseudo-vertical Schottky barrier diodes with low leak current and high blocking voltage”,R. Kumaresan, H. Umezawa, N.Tatsumi, K. Ikeda, and S. Shikata, Diamond Related and Materials 18, (2009), pp.299-302
  • 111) “Fabrication of a Film Bulk Acoustic Wave Resonator from Nano-Crystalline Diamond”, S. Shikata, S. Fujii, and T. Sharda, Diamond and Related Materials 18, (2009), pp.253-257
  • 110) “Fabrication of a field plate structure for diamond Schottky barrier diodes”, K.Ikeda, H.Umezawa, N.Tatsumi, R.Kumaresan and S. Shikata, Diamond and Related Materials 18 (2009), pp.292-295
  • 109) “Recent progress of diamond device toward power application”, S.Shikata, K.Ikeda, R.Kumaresan, H. Umezawa and N. Tatsumi, Materials Science Forum Vols. 615-617, (2009) pp999-1002
  • 108) “Device Characteristics Dependence on Diamond SDBs Area”, H.Umezawa, K.Ikeda, R. Kumaresan, N.Tatsumi and S.Shikata, Materials Science Forum Vols. 615-617, (2009) pp.1003-1006
  • 107) “Device scaling of pseudo-vertical diamond power Schottky barrier diodes”, H.Umezawa, K. Ikeda, N.Tatsumi, K. Ramanujam, S. Shikata, Diamond and Related Materials, 18,(2009) pp.1196-1199
  • 106)”Increase in Reverse Operation Limit by Barrier Height Control of Diamond Schottky Barrier Diode”, H.Umezawa, N.Tatsumi, S.Shikata, K.Ikeda, R.Kumaresan, IEEE Electron Device Letters, 30 , (2009) pp.960-962
  • 105)”Isotopic Homojunction Band Engineering from Diamond”, H.Watanabe, C.Nebel and S.Shikata, Science, 324, (2009) pp.1425-1427
  • 104) “Cathodoluminescence Characterization of Nitrogen-doped Homoepitaxial Diamond Thin Film”, H.Watanabe, T Kitamura, S.Nakashima and S.Shikata, Journal of Applied Physics 105, (2009)093529
  • 103) “Field emission properties of nano-structured phosphorus-doped diamond”, T.Yamada, C.E.Nebel and S.Shikata, Applied Surface Science 256, (2009) pp. 1006-1009
  • 102) “Core Level Photoelectron Spectroscopic Study on Oxidized Phosphorus-Doped (100) Diamond Surfaces after Vacuum Annealing”, S.Kumaragurubaran, T. Yamada, and S.Shikata, Japanese Journal of Applied Physics 48, (2009) 011602
  • 2008
  • 101) “Simulation with an improved plasma model utilized to design a new structure of microwave plasma discharge for chemical vapor deposition of diamond crystals”, H.Yamada, Y.Mokuno, A.Chayahara, and S.Shikata, Diamond Related Materials. 17, (2008) pp.494-497
  • 100) “Numerical and experimental studies of high growth-rate over area with 1-inch in diameter under moderate input-power by using MWPCVD”,H. Yamada, A.Chayahara, Y.Mokuno and S.Shikata, Diamond and Related Materials 17, (2008) pp.1062-1066
  • 99) “Edge termination technologies of p-type diamond Schottky barrier diodes”, K.Ikeda, H.Umezawa, and S.Shikata, Diamond and Related Materials, 17, (2008) pp.809-812
  • 98) “Annealing effects in H- and O- terminated P doped diamond (111) surface”, S.Kumaragurubaran, T.Yamada, and S.Shikata, Diamond and Related Materials, 17, (2008) pp.472-475
  • 97) “Effect of vacuum annealing on field emission from heavily phosphorus doped homoepitaxial (111) diamond” T. Yamada, S. Kumaragurubaran, C. Nebel and S. Shikata, Diamond Related Materials, 17, (2008) pp.745-748
  • 96)“Simulation of mechanical properties of diamond membrane for application to electron beam extraction window”, S.Shikata and T.Yamada, Diamond and Related Materials, 17, (2008) pp.794-798
  • 95) “Vacuum-annealing induced band bending in phosphorus-doped (111) diamond”, S.Kumaragurubaran, T.Yamada, and S.Shikata, Diamond and Related Materials 17,(2008) pp.1969-1971
  • 94) “ICP etching of polycrystalline diamonds: fabrication of diamond nano-tips for AFM cantilevers”, H. Uetsuka, T, Yamada and S. Shikata, Diamond and Related Materials 17, (2008) pp.728-731
  • 93) “Barrier height difference induced by surface terminations for field emission from Pdoped diamond”, Y.Kudo, T.Yamada, N.Yamagauchi,T.Masuzawa, I.Saitoh, S.Shikata and C.Nebel, MRS proc.,(2008)1039-1512
  • 92) “Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (111) diamond”, T. Yamada, C.E. Nebel, K. Somu, S. Shikata, Applied Surface Science, 254, (2008) pp.7921-7924
  • 2007 
  • 91) “Reverse Leakage Current of Diamond Schottky Barrier Diode”, H.Umezawa, N.Tokuda, M.Ogura, S.Ri, H.Yoshikawa, and S.Shikata, Applied Physics Letters 90, (2007) 073506
  • 90) “Cycle of two-step etching process using ICP for diamond MEMS applications”, T.Yamada, H.Yoshikawa, H. Uetsuka, S. Kumaragurubaran, N. Tokuda and S. Shikata, Diamond and Related Materials, 16, (2007) pp.996-999
  • 89) “Field emission from reconstructed phosphorus-doped homoepitaxial diamond (111)”, T.Yamada, S. Kumaragurubaran, H. Uetsuka, C.E.Nebel, H. Yamaguchi, Ken Okano and S. Shikata, Physica Status Solidi A 204(9) (2007) pp.2957-2964
  • 88) “Field emission characteristics of surface-reconstructed heavily phosphorus-doped homoepitaxial diamond”, T.Yamada, H.Yamaguchi, Y.Kudo, K.Okano, S.Shikata, C.E.Nebel, J. Vac. Sci. Technol. B 25(2), (2007)pp.528 - 531
  • 87) “Predominant physical quantity dominating macroscopic surface morphology of diamond synthesized by microwave plasma CVD”, H. Yamada, Y. Mokuno, A. Chayahara, Y. Horino and S. Shikata, Diamond and Related Materials 16, (2007) pp.576-580
  • 86) “Field emission from surface-modified heavily phosphorus-doped homoepitaxial (111) diamond”,T.Yamada, C.E.Nebel, K.Somu, H.Uetsuka, H.Yamaguchi, Y.Kudo, K.Okano, S.Shikata, Physica Status Solidi A 204, (2007) pp.2957-2964
  • 85) “Field emission characteristics of surface-reconstructed heavily phosphorus-doped homoepitaxial diamond”, T. Yamada,H. Yamaguchi, Y.Kudo, K. Okano, S. Shikata, C.E. Nebel, Journal of Vaccuum Science Technology, B 25, (2007), pp.528-531
  • 84) “Predominant physical quantity dominating macroscopic surface shape of diamond synthesized by microwave plasma CVD”, H. Yamada, Y. Mokuno, A. Chayahara, Y. Horino and S. Shikata, Diamond and Related Materials 16, (2007) pp.576-580
  • 2006 
  • 83) “Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling”,H.Umezawa, N.Tokuda, M. Ogura, S.G. Ri and S.Shikata, Diamond and Related Materials, 15, (2006) pp.1949-1953
  • 82) “Field emission from H- and O-terminated heavily P-doped homoepitaxial diamond”, T.Yamada, H.Kato, S.Shikata, C.E.Nebel, H.Yamaguchi, Y.Kudo, and K.Okano, Journal of Vaccuum Science Technology B 24, (2006) pp. 967-970
  • 81) “Field emission process of O-terminated heavily P- doped homoepitaxial diamond”,T. Yamada, D. Takeuchi, H. Kato, S.Shikata, H.Yamaguchi, K.Okano and C.E.Nebel, Diamond and Related Materials 15, (2006) pp.863-865
  • 80) “Field emission from reconstructed heavily phosphorus-doped homoepitaxial diamond (111)”, T.Yamada, K.Okano,H.Yamaguchi, H.Kato, S.Shikata and C.E.Nebel, Applied Physics Letters 88, (2006) 212114
  • 79) “Field emission characteristics of surface-reconstructed heavily phosphorus-doped homoepitaxial diamond”, T. Yamada, N. Yamaguchi, Y. Kudo, K.Okano, S.Shikata and C.E. Nebel, Journal of Vaccuum Science Technology B 25, (2006)
  • 78) “Leakage current analysis of diamond Schottky barrier diode”, H.Umezawa, T.Saito, N.Tokuda, S-G. Ri, M. Ogura, H. Yoshikawa and S. Shikata, Applied Physics Letters 90, (2006)073506
  • 77) “Smooth Surface Dry Etching of Diamond by Very High Frequency Inductive Coupled Plasma” , H.Yoshikawa, N. Fujimori and S. Shikata, New Diamond and Frontier Carbon Technology 16,(2006)pp.97-106
  • 76)“Qualitative correspondences of experimentally obtained growth rate and morphology of single crystal diamond with numerical predictions of plasma and gas dynamics in microwave discharges for various substrate holder shapes”, H. Yamada, A. Chayahara, Y. Mokuno, Y. Soda, Y. Horino, S. Shikata and N. Fujimori、Japanese Journal of Applied Physics 10B (2006) pp.8177-8182
  • 75)“Simulation of temperature and gas flow distributions in region close to a diamond substrate with finite thickness”, H. Yamada, A. Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15 (2006) pp.1738-1742
  • 74) “Numerical analyses of a microwave plasma chemical vapor deposition reactor for thick diamond syntheses”, H.Yamada, A.Chayahara,Y.Mokuno,Y.Horino and S.Shikata, Diamond and Related Materials, 15 (2006) pp.1389-1394
  • 73) “Simulation of microwave plasmas concentrated on the top surface of a diamond substrate with finite thickness”, H. Yamada, A. Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15, (2006) pp.1383-1388
  • 72)” Field emission from reconstructed heavily phosphorus-doped homoepitaxial diamond (111)”, T.Yamada, K. Okano, H. Yamaguchi, H. Kato, S. Shikata, and C.E. Nebel, Applied Physics Letters 88 , (2006) 212114
  • 71)”Field emission process of O-terminated heavily P-doped homoepitaxial diamond”, T. Yamada, H. Kato, D. Takeuchi, S.Shikata, H.Yamaguchi, K.Okano, C.E. Nebel, Diamond and Related Materials 15, (2006) pp.863-865
  • 70) “Field emission from H- and O-terminated heavily P-doped homoepitaxial diamond”, T. Yamada, H. Kato, S. Shikata, C.E. Nebel, H. Yamaguchi, Y. Kudo, K. Okano, Journal of Vaccuum Science Technology B 24 , (2006) pp.967-969
  • 69)“Simulation of temperature and gas flow distributions in region close to a diamond substrate with finite thickness”,H.Yamada, A.Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15, (2006) pp.1738-1742
  • 68)”Numerical analyses of a microwave plasma chemical vapor deposition reactor for thick diamond syntheses”, H.Yamada, A. Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15, (2006) pp.1389-1394
  • 67)“Simulation of microwave plasmas concentrated on the top surface of a diamond substrate with finite thickness”,H.Yamada, A. Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15, (2006) pp.1383-1388
  • 2005
  • 66)“Simulation of the Characteristics of KNbO3 /Diamond Surface Acoustic Wave”, S.Shikata, A, Hachigo, H.Nakahata, and M.Narita, Diamond and Related Materials, 14, (2005) pp.167-172
  • 65)“Improvements of Diamond SAW Device Characteristics and Applications to Communication Systems”, S.Shikata, S.Fujii, T.Uemura, K.Itakura, A.Hachigo, H.Kitabayashi ,H. Nakahata and Y.Takada, New Diamond and Frontier Carbon Technology 15, (2005) pp.349-361
  • 64)“Self-aligned fabrication of single crystal diamond gated field emitter array”, T. Yamada, P. R. Vinod, D. H. Hwang. H. Yoshikawa, S.Shikata and N. Fujimori, Diamond and Related Materials,14, (2005) pp.2047-2050
  • 63)“High Frequency surface acoustic wave devices based on LiNbO3/diamond multilayered structure”, E.Dogheche, D.Remiens and S. Shikata, Applied Physics Letters 87 (2005), 213503
  • 62)“Effect of Crystalline Quality of Diamond Film to the Propagation Loss of Surface Acoustic Wave Devices”, S Fujii and S. Shikata, IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control 52 (10) (2005), pp.1817- 1822
  • 2004
  • 61)”Simulation of the Characteristics of SiO2/c-axis Oriented LiNbO3 on Diamond Surface Acoustic Wave”, S.Shikata, H.Nakahata and A.Hachigo, IEEE Ultrasonics, Ferroelectrics, and Frequency Control., 51, (2004) pp.1683-1689
  • 60)“Simulation of the Characteristics of LiNbO3 /Diamond Surface Acoustic Wave”, S.Shikata, A.Hachigo, H.Nakahata, and M.Narita, IEEE Ultrasonics, Ferroelectrics, and Frequency Control., 51, (2004) pp.1308-1313
  • 59)“800 V 4H-SiC RESURF-type Lateral JFETs”, K. Fujikawa, K. Shibata, T.Masuda, S.Shikata and H.Hayashi, IEEE Electron Dev. Lett., 25, pp 790-791 (2004)
  • 2003
  • 58)”Diamond-based surface acoustic wave devices”, H.Nakahata, S.Fujii , K.Higaki, A.Hachigo, H.Kitabayashi, S.Shikata, and N.Fujimori, IEEE Semiconductor Science and Technology, 18, (2003) pp.p96-104
  • 2002 
  • 57)” Low loss Diamond Surface Acoustic Wave Devices Using Small Grain Poly-Crystalline Diamond”, T.Uemura, S.Fujii, H.Kitabayashi, K.Itakura, A.Hachigo, H.Nakahata and S.Shikata, Jpn.J.Appl. Phys., 41 (2002) pp.3476~3479
  • 56)”Equivalent Circuit Parameters of Surface Acoustic Wave Interdigital Transducers for ZnO/Diamond and SiO2/ZnO/Diamond Structures”, H.Nakahata, A.Hachigo, S.Fujii and S.Shikata, Jpn.J.Appl.Phys., 41 (2002) pp.3489-3493
  • 55)”Low Loss Diamond SAW Devices by Small Grain Size Poly-crystalline Diamond”, T.Uemura, S.Fujii,H.Kitabayashi, K.Itakura, A.Hachigo, H.Nakahata, and S.Shikata, IEEE Ultrason. Symp. Proc., 416~419 (2002)
  • 2001
  • 54)”Synthesis and Surface Acoustic Wave Property of Aluminum Nitride Thin Films Fabricated on Silicon and Diamond Substrates Using the Sputtering Method”, M. Ishihara, T.Manabe, T.Kumagai, T. Nakamura, S. Fujiwara, Y. Ebata, S.Shikata, H. Nakahata, A. Hachigo and Y. Koga, Jpn.J.Appl. Phys., 40, 5065, (2001)
  • 53) “High frequency SAW Devices using SiO2/ZnO/Diamond”, S.Shikata, H.Nakahata, S.Fujii, A.Hachigo, H.Kitabayashi, K.Itakura, T.Uemura, H.Toyoda, and N.Fujimori, Int'l Symp. Acoustic Wave Devices for Future Mobile Comm. Systems, Proc., 227-230 (2001)
  • 2000
  • 52)”SAW Resonators of SiO2/ZnO/diamond Structure in GHz Range”,H.Nakahata, A.Hachigo, K.Itakura, S.Fujii and S.Shikata, IEEE Freq.Cont. Symp. Proc., 315~320 (2000)
  • 51)”Fabrication of High Frequency SAW Filters from 5 to 10 GHz using SiO2/ZnO/Diamond Structure”Nakahata, A. Hachigo, K.Itakura, and S. Shikata, IEEE Ultrason. Symp. Proc., 349~352 (2000)
  • 1999 
  • 50) “Annealing behaviours of defects in electron-irradiated diamond probed by positron annihilation”, A.Uedono,K.Mori, N.Morishita, H.Itoh, S.Tanigawa, S.Fujii and S.Shikata, J.Physics, Condens.Matter,11 (1999) pp.4925-4930
  • 49) “Defects in synthesized and natural diamond probed by positron annihilation”, A.Uedono, S.Fujii, H.Itoh, S.Tanigawa and S.Shikata, J.Physics,Condens.Matter, 11(1999) pp.4109-4114
  • 48) “New Material Systems for Diamond Surface Acoustic Wave Devices”, S.Shikata, H.Nakahata and A.Hachigo, New Diamond and Frontier Carbon Technology, 9, 75~92 (1999)
  • 1998 
  • 47)”Study on Surface Acoustic Wave Characteristics of SiO2/IDT/ZnO/Diamond Structure and Fabrication of 2.5 GHz narrow band filter”, H. Nakahata, H.Kitabayashi, T.Uemura, A. Hachigo, K. Higaki, S.Fujii, Y. Seki, K. Yoshida and S. Shikata, Jpn.J.Appl. Phys., 37, , 2918~2922 (1998)
  • 46)“The road to commercialization of Vapor Phase Grown Diamond," S. Shikata, MRS Bulletin, 23, p61 (1998)
  • 45)”Diamond SAW filter for 2.488 Gbps retiming”, H. Nakahata, H.Kitabayashi, T.Uemura, A. Hachigo, K. Higaki, S.Fujii and S. Shikata, IEEE Ultrason.Symp. Proc., 319~322 (1998)
  • 44) “Structures and Configurations of Diamond SAW Device and its Characteristics”, S.Shikata, Osaka Univ. Symposium proc.,58-61 (1998)
  • 1997
  • 43)”High Power Durability of Diamond Surface Acoustic Wave Filter”, K. Higaki, H. Nakahata, H.Kitabayashi, S.Fujii, K. Tanabe, Y. Seki and S. Shikata, IEEE Ultrasonics, Ferroelectrics, and Frequency Control, 44, 1395 ~1400 (1997)
  • 42) “Diamond wafers for SAW application”, S.Fujii, Y.Seki, K.Yoshida, H.Nakahata, K.Higaki, H.Kitabayashi and Shikata, IEEE Ultrason. Symp. Proc., 183~186 (1997)
  • 41)”High frequency SAW filter on diamond”, K. Higaki, H. Nakahata, H.Kitabayashi, S. Fujii, K. Tanabe, Y. Seki and S. Shikata, IEEE MTT-S Digest, 829~832 (1997)
  • 40) “Diamond SAW Filter for Optical Fiber Communication Systems”, S. Shikata, H.Nakahata, K. Higaki, H. Kitabayashi, K. Tanabe, S. Fujii, and Y. Seki, Int'l Symp. Advanced Materials Proc., (1997)
  • 1996 
  • 39) “Fabrication of 2.5 GHz SAW retiming filter with SiO2/ZnO/diamondStructure”,H.Nakahata, S.Fujii, H.Kitabayashi, K.Higaki, K.Tanabe, Y.Seki and S.Shikata, IEEE Ultrason. Symp. Proc., pp.285~288, (1996)
  • 1995 
  • 38) “Pulse-doped Diamond P-Channel Metal Semiconductor Field-Effect Transistor”, H.Shiomi, Y.Nishibayashi, N.Toda, and S.Shikata, IEEE Electr. Device Lett., 16, 36 (1995)
  • 37) ”SAW deivce application of diamond”, S.Shikata,Electronic Manufacturing Technology Symp., (1995) pp.379-382
  • 36) “Study of various types of diamonds by measurements of double crystal x-ray diffraction and positron annihilation”, S.Fujii, Y.Nishibayashi, S.Shikata, A.Uedono, and S.Tanigawa, J.Appl.Phys., 78,1510 (1995)
  • 35) “Theoretical Study on SAW Characteristics of Layered Structures Including a Diamond Layer”, H. Nakahata, A. Hachigo, K. Higaki, S.Fujii, A. Hachigo, S. Shikata, and N. Fujimori, IEEE Ultrasonics, Ferroelectrics, and Frequency Control, 42, pp.362~375 (1995)
  • 34) “Characterization of diamond single crystals by means of double-crystal X-ray diffraction and positron annihilation”, S.Fujii, Y.Nishibayashi, S.Shikata, A.Uedono and S.Tanigawa, Appl. Phys.A 61, 331 (1995)
  • 33) “SAW filters based on diamond”, S.Shikata, H.Nakahata, K.Higaki, S.Fujii, A.Hachigo, H.Kitabayashi, Y.Seki, K.Tanabe and N.Fujimori, 3rd Int'l Conf. Appl. of Diamond Films and Related Materials, Proc, pp.21~28 (1995)
  • 32) “SAW Device on Diamond”, H.Nakahata, K.Higaki, S.Fujii, H.Kitabayashi, Y.Seki, K.Tanabe, and S.Shikata, IEEE Ultrason. Symp.pp.361~370 (1995)
  • 1994
  • 31) “Characterization of Single Crystal Diamond by Double-Crystal X-Ray Diffraction”, Y.Nishibayashi, T.Tomikawa, S.Shikata, and N.Fujimori, Trans. Mat.Res.Soc.Jpn., 14B, 1537 (1994)
  • 30) “p-n Junction Diode by B-Doped Diamond heteroepitaxially grown on Si-doped c-BN”, T.Tomikawa,Y.Nishibayashi, and S.Shikata, Diamond and Related Materials,3,pp.1389-1392 (1994)
  • 29) “Diamond (001) single-domain 2×1 surface grown by chemical vapor deposition”, T.Tsuno, T.Tomikawa, and S.Shikata, Appl.Phys.Lett., 64,572 (1994)
  • 28) “Diamond homoepitaxial growth on (111) substrate investigated by scanning tunneling microscope”, T.Tsuno, T.Tomikawa, and S.Shikata, J.Appl.Phys.75, 1526 (1994)
  • 27) “Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering”, A.Hachigo, H.Nakahata, K.Higaki, S.Fujii, and S.Shikata, Appl.Phys.Lett., 65,pp. 2556~2558 (1994)
  • 26) “High frequency surface acoustic wave filter using ZnO/diamond/Si structure”, H. Nakahata, K. Higaki,   A.Hachigo, S. Shikata, N. Fujimori, Y.Takahashi, T.Kajiwara and Y. Yamamoto, Jpn.J.Appl. Phys.,33, pp.324~328, (1994)
  • 25) “2.5GHz SAW bandpass filter using poly-crystalline diamond”, S. Shikata, H.Nakahata, K.Higaki, S.Fujii,A.Hachigo, and N.Fujimori, 4th Int'l Conf..New Diamond Science and Technol., Proc., pp.697~700 (1994)
  • 24) “Fabrication of a Gate-Recessed-Structure MESFET on Diamond Films”, H.Shiomi, Y.Nishibayashi, N.Toda,S.Shikata and N.Fujimori, 4th Int'l Conf..New Diamond Science and Technology, Proc.,pp.669-672 (1994)
  • 23) “Thermally Stable Ohmic Contact to Boron Doped Diamond Films”, Y.Nishibayashi, H.Shiomi, N.Toda, and S.Shikata, 4th Int'l Conf..New Diamond Science and Technology, Proc., pp.717-720 (1994)
  • 22) “Surface structure and morphology of diamond epitaxial film”, T.Tsuno, T. Imai, S. Shikata and N.Fujimori,4th Int'l Conf..New Diamond Science and Technology, Proc. ,pp.249-252 (1994)
  • 1993
  • 21)”High-frequency bandpass filter using polycrystalline diamond”, S. Shikata, H.Nakahata, A.Hachigo, and N.Fujimori, Diamond and Related Materials, 2, 1197~1202 (1993)
  • 20) “Cross-Sectional Transmission Electron Microscopy Observation and Selected-Area Electron Diffraction of Interfaces of Epitaxially Grown Diamond Thin Films on Cubic Boron Nitride Substrates” T.Tomikawa and S.Shikata, Jpn.J.Appl.Phys., 32, 3938 (1993)
  • 19) “1.5GHz SAW bandpass filter using poly-crystalline diamond”, S.Shikata, H.Nakahata, K.Higaki, A.Hachigo and N.Fujimori, IEEE Ultrasonics Symp., Proc., 277~280, (1993)
  • 18)”STM observation of diamond (111) homoepitaxial films”, T.Tsuno, T.Tomikawa and S.Shikata, Trans.Mat.Res.Soc.Jpn., (1993) 1471-1474
  • 17) “Microfabrication Technique for Diamond Devices”, S.Shikata, Y.Nishibayashi, T.Tomikawa, N.Toda, and N.Fujimori, 2nd Int'l Conf. Appl. of Diamond Films and Related Materials, Proc., 377-380 (1993)
  • 16) “High-Frequency Surface Acoustic Wave Filter Using ZnO/Diamond/Si Structure”, H.Nakahata, K.Higaki,A.Hachigo, S. Shikata, N.Fujimori, Y.Takahashi, R.Kajihara, N.Sakairi and Y. Yamamoto, 2nd Int`l Conf.on the Application of Diamond Films and Related Materials, Proc., p.361-364 (1993)
  • 1992 
  • 15) “High Frequency Surface Acoustic Wave Filter Using ZnO/Diamond Structure”, H.Nakahata, A..Hachigo, S.Shikata and N.Fujimori, IEEE Ultrason.Symp. Proc., 377~380 (1992)
  • 14)“The study of Se and Si implanted GaAs by slow positron”, S.Fujii, S.Shikata, L.Wei, and S.Tanigawa, Mat.Sci.For.,2105-110 (1992) pp.1387
  • 13) “Characterization of vacancy-type defects in Se-implanted GaAs by means of a slow positron beam”, S.Fujii, S.Shikata, L.Wei, and S.Tanigawa, J.Appl.Phys. 72, 1405 (1992)
  • 12) “The study of Ion Implanted GaAs by slow positron beam”, S.Fujii, S.Shikata, L.Wei, and S.Tanigawa, GaAs and Related Materials, proc.,pp.241-244 (1992)
  • 11) “Effect of Annealing Method on Vacancy-Type Defects in Si-implanted GaAs Studied by a Slow Positron   Beam”, S.Shikata, S.Fujii, L.Wei and S.Tanigawa, Jpn.J.Appl.Phys., 31, 732~736 (1992)
  • 1991
  • 10)“Thermally stable Pd/Ge ohmic contacts to n‐type GaAs”, J. Tsuchimoto, S.Shikata, and H. Hayashi, J.Appl. Phys., 69, 6556 (1991)
  • 9) “Suppression of emitter size effect on the current gain of AlGaAs/GaAs heterojunction bipolar transistor by   utilizing (NH4)2Sx treatment”, S.Shikata, H.Okada, and H.Hayashi, J. App. Phys., 69,pp.2717~2719 (1991)
  • 8) “Photoluminescence studies on over-passivations of (NH4)2Sx treated GaAs”, S.Shikata and H. Hayashi, J.Appl.Phys. 70, 3721~3725 (1991)
  • 7) “Over-passivation of sulfur treated AlGaAs/GaAs hetero junction bipolar transistors”, S.Shikata, H.Okada, and H.Hayashi, J. Vac. Sci. Technol. B 9, 2479~2482 (1991)
  • 6) “Electrical Characteristics and Reliability of Pt/Ti/Pt/Au Ohmic Contacts to p-Type GaAs”, H.Okada, S.Shikata and H.Hayashi, Jpn. J. Appl. Phys. 30 (1991) L558-L566
  • 1990
  • 5) “A Novel Self-Aligned Gate Process for Half-Micrometer Gate GaAs IC's Using ECR-CVD”, S.Shikata, J.Tsuchimoto and H.Hayashi, IEEE Trans. Electron Devices, 37. 1800~1803 (1990)
  • 4) “A Novel Self-Aligned Gate Process for GaAs LSI using ECR-CVD”, S.Shikata, S.Sawada, J.Tsuchimoto, and H.Hayashi, GaAs IC Symp., Proc., 257-260 (1990)
  • 3) “Suppression of emitter size effect on the current gain of AlGaAs/GaAs HBT by utilizing (NH4)2Sx treatment”, S.Shikata, H.Okada, and H.Hayashi, 17th Int'l Symp. GaAs and Related Compounds, Proc., 251-254 (1990)
  • 1987
  • 2) “A Novel Self-Aligned Process using ECR-CVD”, S.Shikata, H.Hayashi, H.Takahashi and K.Yoshida, SPIE Advanced Processing of Semiconductor Devices, Proc., 126-129 (1987)
  • 1984
  • 1) “The Effects of Material Constants and Device Parameters on Electro-optic Characteristics of Liquid Crystal Devices”, S.Shikata, M.Isogai, K.Iwasaki, and A.Mukoh, Molecular Crystals and Liquid Crystals, 108, 339~348 (1984)
  •  国際学会 招待講演・プレナリー講演
  • 25)” Single crystal diamond wafer for high power electronics”, S.Shikata,International Conference on Diamond and Carbon Materials, Bad Homburg, Germany, Sept.6-10(2015) Invited talk
  • 24) “Diamond Wafer Prospect for the Power Device Application”, S.Shikata, H.Umezawa, Y.Kato, S.Ohmagari, H.Yamada, N.Tsubouchi, Y.Mokuno, and A.Chayahara, 6th International Workshop on Crystal Growth Technology, Berlin, Germany, June (2014) Invited talk
  • 23) “Diamond based power devices”, S.Shikata,H.Umezawa,Y.Kato, S.Ohmagari, H.Yamada, N.Tsubouchi, Y.Mokuno and A.Chayahara, New Diamond and Nano Carbons 2014, Chicago, USA, May (2014) Invited talk
  • 22) “Diamond based power devices”, S.Shikata,H.Umezawa,Y.Kato, H.Yamada, N.Tsubouchi, Y.Mokuno and A.Chayahara, Int.Conf.SiC and Related Materials, Miyazaki, Japan, Oct.(2013) Invited talk
  • 21) “Road to next generation diamond power switching device”, S.Shikata, H.Umezawa,Y.Kato, H.Watanabe, H.Yamada, N.Tsubouchi, Y.Mokuno and A.Chayahara, 63rd Diamond Conf., Birmingham July (2012)Plenary talk
  • 20) “Progress in technologies of fabrication of single-crystal diamond wafers with inch-size area”, H.Yamada, A.Chayahara, Y.Mokuno, N.Tsubouchi and S.Shikata, Solid State Device Meeting, Kyoto, Sept. (2012)Invited talk
  • 19) “New opportunities for diamond based frequency control devices”, S.Shikata, H.Umezawa, S.Fujii, T.Odawara, H.Yamada, T.Omori, and K.Hashimoto, New Diamond and Nano Carbons2012, San Juan May (2012) Plenary talk
  • 18) “Single crystal diamond thin plate and its thermal conductivity”, S.Shikata, A.Chayahara, N.Yamada and T.Yagi 15th Int'l Conf.Thin Films,Kyoto, Nov.(2011)
  • 17) “Single NV centers in isotopically controlled diamond films”, K.Ito, T.Ishikawa, K.M.Fu, C.Santori, P.E. Barclay,R.G.Beausoleil,R.Hirano,M.Tajima, H.Watanabe and S.Shikata 22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides (DIAMOND2011),Gamisch-Partenkirchen, (2011)
  • 16) “Latest progresses in R&D for synthesis of large single-crystal diamond wafers by using MWPCVD”, H.Yamada, A.CHayahara, Y.Mokuno, N.Tsubouchi, H.Umezawa and S.Shikata, 8th International Workshop Strong Microwave and Terahertz Waves: Sources and Applications,Nizhny Novgorod, July (2011)
  • 15) “Diamond Related Technologies for the Mitigation of Climate Change”, S.Shikata, New Diamond and Nano Carbons2010, Suzhou,May (2010) Plenary talk
  • 14) “Developments of elemental technologies to produce inch-size single crystal diamond wafers”, H.Yamada, A.Chayahara, Y.Mokuno, N.Tsubouchi, S.Shikata and N.Fujimori, New Diamond and Nano Carbons2010, Suzhou,May (2010)Invited
  • 13) “The distribution control of radicals by discharge conditions of microwave plasma to synthesize diamond crystals”, H.Yamada, A.Chayahara, Y.Mokuno and S.Shikata, New Diamond and Nano Carbons2009, Traverse City,May (2010)Invited
  • 12) “A description of of reactive microwave-plasma-CVD of single-crystal-diamond”, H.Yamada, A.Chayahara, Y.Mokuno and S.Shikata, ISPlasma2010,Nagoya,March (2010)Invited
  • 11) “Recent progress of diamond toward power switching devices” S.Shikata and H.Umezawa, 20th European Conf.Diamond, Diamond like carbons, Carbon Nanotubes,Athene, Sept. (2009)Invited
  • 9) “Simulation of microwave plasma CVD for synthesis of large-size diamond crystals”, H.Yamada, A.Chayahara, Y.Mokuno and S.Shikata, 7th Symposium on Plasma Processing,Liblice, April (2009)
  • 8) “Schottky device of diamond”, H.Umezawa, R.Kumaresan, K.Ikeda N.Tatsumi and S.Shikata, NIMS Conference , Tsukuba July (2008)
  • 7) “Application of Diamond to electronics”, S.Shikata, 9th Int'l Conf. Diamond Electrochemistry, Tokyo, March (2007) Invited
  • 6) “Key Issues on Electronic Application of Diamond”, N.Fujimori and S.Shikata, Applied Diamond Conference,Chicago, May(2005) Plenary talk
  • 5) "High Frequency SAW Resonators by SiO2/ZnO/Diamond and It's Application to Low Phase Noise VCSO," S.Shikata, H.Nakahata, S.Fujii, T.Uemura, Y.Takada, T.Kano, N.Itoh, and O.Iwamoto, Int'l Symp. Acoustic Wave Devices for Future Mobile Comm. Systems, Chiba, March (2004)Invited
  • 4) ”Diamond SAW Device, Narrow Band and Wide Band”, S.Shikata, H.Nakahata, S.Fujii, A.Hachigo, H.Kitabayashi, K.Itakura, and T.Uemura, 9th Int'l Conference for New Diamond Science and Technology , Tokyo, March (2004)Invited
  • 3)”High frequency SAW Devices using SiO2/ZnO/Diamond”, S.Shikata, H.Nakahata, S.Fujii, A.Hachigo, H.Kitabayashi, K.Itakura, T.Uemura, H.Toyoda, and N.Fujimori, Int'l Symp. Acoustic Wave Devices for Future Mobile Comm. Systems, Chiba, March (2001)Invited
  • 2)“1.5GHz SAW bandpass filter using poly-crystalline diamond”, S.Shikata, H.Nakahata, K.Higaki, A.Hachigo,and N.Fujimori, IEEE Ultrasonics Symp., Orlando, Oct.(1993)Invited
  • 1) “A Novel Self-Aligned Gate Process for GaAs LSI using ECR-CVD”, S.Shikata, S.Sawada, J.Tsuchimoto, and H.Hayashi, GaAs IC Symp., New Orleans Oct.(1990)Invited
  • 解説等
  •  “Large-area high-quality single crystal diamond”, M.Schreck , J.Asmussen , S.Shikata , J-C. Arnault ,and N. Fujimori, MRS Bulletin 39,(2014)pp.504-510
  •  “Effect of an Ultraflat Substrate on the Epitaxial Growth of Chemical-Vapor-Deposited Diamond”,Y.Kato,H.Umezawa and S.Shikata Photon Factory Activity Report 2012 Part A(Highlights) 30(2014)pp.66-67
  •  “ダイヤモンドパワー半導体へ向けた開発状況”、鹿田真一、応用物理、82(2013)pp.299-302
  •  “ダイヤモンド薄膜を用いたサステナブル圧電デバイス”、鹿田真一、超音波、23(2011)pp.56-58
  • ”ダイヤモンドを用いた次世代パワーデバイスの開発“、鹿田真一、表面技術、62(2011)pp.170-174
  • “ダイヤモンドウェハおよびパワーデバイスの開発動向”、鹿田真一、電子材料、49(2010)pp.19-24
  • ”半導体ダイヤモンドデバイスの研究動向“、鹿田真一、Semiconductor FPR World、28(2009) pp.57-59
  • “高温動作パワーデバイス用ダイヤモンドデバイス”、鹿田真一、オーム社96(2009)pp.8-9
  • “ダイヤモンドの特性を活用したデバイスの開発” 鹿田真一、化学、62,36(2007)
  • “ニューダイヤモンドの電気的応用” 鹿田真一、New Diamond vol.22, (2006)
  • “ダイヤモンドの工業応用”、鹿田真一、岩石と鉱物、vol.33, p106 (2004)
  • “ダイヤモンドSAWデバイス”、鹿田真一、中幡英章、応用物理 vol.71,No.3,p327(2002)
  • “ダイヤモンドSAWデバイス(1)” 鹿田真一、NEW DIAMOND、15,No.2,p28 (1999)
  • “ダイヤモンドSAWデバイス(2)”鹿田真一、NEW DIAMOND、15,No.3,p19 (1999)
  • “The road to commercialization of Vapor Phase Grown Diamond," S.Shikata, MRS Bulletin, 23, p61 (1998)
  • “ダイヤモンドSAWフィルタ”, 鹿田真一、電子情報通信学会誌,、81, p240 (1998)
  • “ダイヤモンドの高周波SAWフィルタへの応用” セラミックス、33 ,p458 (1998)
  • “狭帯域ダイヤモンドSAWフィルタと超高速光リンクへの適用”、鹿田真一、New Diamond、14, p22 (1998)
  • “ダイヤモンドのエレクトロニクスへの応用における最近の進歩”、鹿田真一、真空、vol.37, 387(1997)
  • “SAWフィルタの最新動向、ダイヤモンド基板による高周波化”、鹿田真一、エレクトロニクス 8(1997)
  • 特許
  • 日本国 登録特許 
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  • 83)「3層構造積層ダイヤモンド系基板、パワー半導体モジュール用放熱実装基板およびそれらの製造方法」鹿田、梅澤、関 5979478 2016/08/05
  • 82)「半導体ダイヤモンドデバイス用オーミック電極」、山田、ソム、鹿田 5747239 2015/5/22
  • 81)「ダイヤモンド電子素子」、辰己、池田、西林、今井、梅澤、鹿田 5521132 2014/4/18)
  • 80)「電界電子放出素子及びその製造方法」、中島、山田、高橋、奥村、鹿田、谷本 5540331 2014/5/16
  • 79)「ダイヤモンド電子素子及びその製造方法」梅澤、加藤、永瀬、鹿田 5540296 2014/5/16
  • 78)「ダイヤモンド電子素子及びその製造方法」梅澤、加藤、永瀬、鹿田 5532248 2014/5/9
  • 77)「ダイヤモンド表面と金属片との接合保護構造」池田、梅澤、鹿田 5522648、2014/04/18
  • 76)「半導体ダイヤモンドデバイス用オーミック電極」山田、ソム、鹿田 5488602 2014/3/7
  • 75)「オフ角を有する単結晶基板の製造方法」杢野、茶谷原、山田、鹿田 5382742 2013/1011
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  • 73)「ダイヤモンド半導体デバイス及びその製造方法」梅澤、鹿田、池田 5344464 2013/8/23
  • 72)「バリアハイト制御をしたダイヤモンド電子デバイス」池田、梅澤、鹿田 5414019 2008/04/01
  • 71)「同位体ダイヤモンド積層体」渡邊、ネーベル、鹿田 5263893 2013/5/10
  • 70)「ダイヤモンド基板の表面処理方法」山田、鹿田、ソム 5234541  2013/4/5
  • 69)「ダイヤモンド表面の微細加工方法」上塚、山田、鹿田 5219116  2013/3/15
  • 68)「高出力ダイヤモンド半導体素子」池田、梅澤、鹿田  5099486 2012/10/05
  • 67)「マイクロ波プラズマ処理装置」山田、茶谷原、杢野、鹿田 5071927 2012/08/31
  • 66)「高出力ダイヤモンド半導体素子」 池田、梅澤、鹿田、クマレサン、辰巳  5051835 2012/08/03
  • 65)「コーティング基板の製造方法、前記方法により製造されるコーティング基板」雨宮、中山、嶋本、上塚、山田、ネーベル、鹿田  4904559 2012/01/20
  • 64)「オフ角を有する単結晶基板の製造方法」 杢野、茶谷原、山田、鹿田 4873467 2011/12/02
  • 63)「不純物傾斜型ダイヤモンド薄膜及びその製造方法並びに該不純物傾斜型ダイヤモンド薄膜を用いたダイオード又はトランジスタ」 李、山崎、大串、鹿田 4858948 2011/11/11
  • 62)「p型表面伝導性酸素終端(111)ダイヤモンドの製造方法及び高周波・高出力デバイス」李、山崎、大串、鹿田4845086 2011/10/21
  • 61)「単結晶ダイヤモンドの表面損傷の除去方法」 杢野、茶谷原、鹿田4803464 2011/08/19
  • 60)「細胞内及び細胞間の微小空間計測用カンチレバーシステム」青木、鹿田、上塚、中村、嶋本 4798454 2011/08/12
  • 59)「リン原子がドープされたn型(100)面方位ダイヤモンド半導体単結晶膜及びその製造方法」加藤、山崎、大串、鹿田 4784915 2011/07/22
  • 58)「ダイヤモンド素子及びその製造方法」梅澤、齊藤 、朴、鹿田 4734668 2011/05/13
  • 57)「ダイヤモンド素子及びその製造方法」齊藤、梅澤、朴、鹿田 4734667 2011/05/13
  • 56)「ダイヤモンド製造方法」山田、茶谷原、杢野、堀野、鹿田 4729741 2011/04/28
  • 55)「ダイヤモンド構造体のエッチング方法及びそれを用いたパワー半導体デバイス若しくは電子放出源の製造方法」 山田,鹿田、 4543216 2010/7/9
  • 54)「炭素終端構造のダイヤモンド電子源及びその製造方法」山田、Nebel、鹿田  4340776 2009/7/17
  • 53)「電子放出電圧を著しく低減した電子源及びその製造方法」 山田、鹿田4103961 2008/4/4
  • 52)「表面弾性波素子」, 板倉、八郷、中幡、藤井、鹿田, 03365506  2001/03/21
  • 51)「表面弾性波素子」, 板倉、八郷、中幡、藤井、鹿田,  03365505  2001/03/21
  • 50)「表面弾性波素子」, 八郷、板倉、中幡、藤井、鹿田,  03341759  2000/08/25
  • 49)「硬質炭素膜および表面弾性波素子用基板」, 藤井、上村、石橋、関、中幡、鹿田, 03189833  1999/09/07
  • 48)「ダイヤモンドウェハのチップ化方法」, 中幡、桧垣、藤井、北林、鹿田, 03319507  1998/06/29
  • 47)「表面弾性波素子及び製造方法」, 中幡、上村、桧垣、藤井、北林、鹿田, 03275297  1997/11/07
  • 46)「ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ」, 藤井、関、吉田、中幡、桧垣、北林、鹿田, 03168961  1997/10/06
  • 45)「表面弾性波素子」, 中幡、成田、桧垣、藤井、北林、鹿田, 03177946  1996/02/09
  • 44)「表面弾性波素子」, 北林、中幡、桧垣、藤井、鹿田, 03205981  1995/09/29
  • 43)「表面弾性波素子」, 中幡、桧垣、藤井、北林、鹿田, 03205978  1995/08/08
  • 42)「ダイヤモンドウエハとその製造方法」, 田辺、関、池谷、藤森、中幡、鹿田, 03296134  1995/03/31
  • 41)「微小機械部品及びその製造方法」, 塩見、西林、鹿田, 03391141  1995/03/24
  • 40)「表面弾性波素子」, 中幡、桧垣、藤井、北林、鹿田, 03204290  1995/02/09
  • 39)「ダイヤモンド基材および表面弾性波素子」, 桧垣、中幡、藤井、北林、鹿田, 03374557  1994/11/29
  • 38)「電界効果トランジスタ」, 塩見、西林、鹿田,  03436278  1994/09/16
  • 37)「表面弾性波素子」, 中幡、八郷、桧垣、藤井、鹿田, 03318920  1994/09/02
  • 36)「表面弾性波素子」, 中幡、八郷、桧垣、藤井、鹿田, 03344441  1994/03/25
  • 35)「表面弾性波素子」, 中幡、桧垣、八郷、藤井、鹿田,03282645  1994/09/02
  • 34)「配向性材料および表面弾性波素子」, 八郷、中幡、桧垣、藤井、鹿田, 03344442  1994/05/27
  • 33)「表面弾性波素子用ダイヤモンド基材及び素子」, 鹿田、中幡、藤井、八郷、桧垣, 03295921  1994/06/20
  • 32)「表面弾性波素子」, 中幡、八郷、桧垣、藤井、鹿田,特 03344441  1994/03/25
  • 31)「半導体素子」, 西林、塩見、鹿田, 03309887  1994/08/17
  • 30)「表面弾性波素子」, 中幡、八郷、桧垣、鹿田,03205976  1993/09/07
  • 29)「半導体素子」, 西林、富川、鹿田, 03269510  1993/08/31
  • 28)「オーミック電極の形成方法」, 戸田、西林、富川、鹿田, 03304541  1993/09/08
  • 27)「n型半導体立方晶窒化ホウ素のオーミック電極およびその形成方法」, 西林、富川、鹿田, 02942452  1993/10/21
  • 26)「電子デバイス」, 西林、富川、鹿田, 03269065  1993/01/29
  • 25)「半導体ダイヤモンド及びその形成方法」, 西林、富川、鹿田, 03374866  1993/08/30
  • 24)「窒化ホウ素のエッチング方法」, 富川、鹿田、築野, 03017898  1993/02/12
  • 23)「表面弾性波素子」, 桧垣、中幡、八郷、鹿田, 03163606  1993/01/29
  • 22)「ダイヤモンドのエッチング方法」, 西林、富川、鹿田、藤森, 03104433  1992/10/16
  • 21)「半導体装置の製造方法」, 西林、富川、鹿田, 02931727  1992/10/29
  • 20)「表面弾性波素子および表面弾性波素子の製造方法」, 鹿田、中幡、八郷、桧垣, 03252865  1992/09/11
  • 19)「表面弾性波素子」, 中幡、八郷、桧垣、鹿田, 03248258  1992/09/02
  • 18)「ダイアモンドのエッチング方法」, 富川、鹿田, 02997135  1992/07/31
  • 17)「半導体装置」, 鹿田, 03339508  1992/03/24
  • 16)「超音波振動子」, 中幡、鹿田, 02990926  1992/03/16
  • 15)「表面弾性波素子及びその製造方法」, 中幡、八郷、鹿田、藤森, 03225495  1992/02/21
  • 14)「表面弾性波素子」, 中幡、鹿田、八郷、藤森,特 03170819  1991/09/24
  • 13)「表面弾性波素子の製造方法」, 八郷、中幡、鹿田、藤森, 03132515  1991/09/26
  • 12)「表面弾性波素子」, 中幡、鹿田、八郷、藤森,特 03109060  1991/09/26
  • 11)「弾性表面波素子及びその製造方法」, 八郷、中幡、鹿田、藤森, 03132078 1991/09/19
  • 10)「MES構造電極の形成方法」, 鹿田, 02830414 1990/08/01
  • 9)「電界半導体レーザの保護膜形成方法」, 鹿田, 02841775 1990/08/01
  • 8)「電界効果トランジスタの製造方法」, 鹿田, 02685149 1988/04/11
  • 7)「ゲ−ト電極の形成方法」, 鹿田, 02657950 1988/04/06
  • 6)「ゲ−ト電極形成方法」, 鹿田, 02652657 1988/04/06
  • 5)「電界効果トランジスタの製造方法」, 鹿田, 02544767 1988/02/08
  • 4)「超電導薄膜の作製方法」, 鹿田, 02668532 1987/08/18
  • 3)「電界効果トランジスタの製造方法」, 鹿田, 02055848 1986/12/01
  • 2)「結晶へのイオン注入方法」, 鹿田, 02124260 1985/06/20
  • 1)「結晶へのイオン注入方法」, 鹿田,菊池  01794034 1985/06/18
  •  米国 登録特許
  • 65) Large diamond crystal substrates and methods for producing the same 8,940,266 H.Yamada, A.Chayahara, Y.Mokuno and S.Shikata Jan.27, 2015
  • 64) Film of N type (100)oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same 8,876,973  H.Kato, S.Yamasaki, H.Okushi, S.Shikata, Nov.4,2014
  • 63) Ohmic electrode for use in a semiconductor diamond device 8,735,907   T Yamada, Kumaragurubaran, S.Shikata, May27, 2014
  • 62)Schottky Diamond Semiconductor Device and Manufacturing Method for a Schottky Electrode for Diamond Semiconductor Device 8,237,170   K.Ikeda, H.Umezawa,S.Shikata, Aug.7, 2012
  • 61)Diamond Electron Source Having Carbon-Terminated Structure 7960905   2011/06/14   T.Yamada, C.Nebel and S.Shikata
  • 60)Surface acoustic wave device utilizing a ZnO layer and a diamond layer 6,642,813 Itakura, Hachigo, Fujii, Nakahata, Shikata November 4, 2003
  • 59)Surface acoustic wave device 6,469,416    Itakura, Hachigo, Nakahata, Fujii, Shikata October 22, 2002
  • 58)Hard carbon film and surface-acoustic-wave substrate 6,448,688   Fujii, Uemura, Seki, Nakahata, Shikata September 10, 2002
  • 57)Hard carbon film and surface acoustic-wave substrate 6,416,865  Fujii, Uemura, Seki, Nakahata, Shikata July 9, 2002
  • 56)Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device  6,356,006   Fujii, Seki, Yoshida, Nakahata, Higaki, Kitabayashi, Uemura, Shikata March 12, 2002
  • 55)Surface-acoustic-wave device 6,337,531  Nakahata, Narita, Hachigo, Shikata January 8, 2002
  • 54)Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device  6,320,296 Fujii, Seki, Yoshida, Nakahata, Higaki, Kitabayashi, Uemura, Shikata November 20, 2001
  • 53)Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wavedevice    6,210,780 Fujii, Seki, Yoshida, Nakahata, Higaki, Kitabayashi, Uemura, Shikata April 3, 2001
  • 52)Diamond wafer and method of producing a diamond wafer 6,051,063    Tanabe, Seki, Ikegaya, Fujimori, Nakahata, Shikata April 18, 2000
  • 51)Surface acoustic wave device incorporating single crystal LiNbO3 substrate 6,025,636  Nakahata, Narita, Higaki, Fujii, Kitabayashi, Shikata February 15, 2000
  • 50)Method of forming diamond heat sink comprising synthetic diamond film 5,976,909   Shiomi, Nakahata, Nishibayashi, Shikata November 2, 1999
  • 49)Diamond-ZnO surface acoustic wave device 5,959,389   Nakahata, Uemura, Higaki, Fujii, Kitabayashi, Shikata September 28, 1999
  • 48)Micro mechanical component and production process thereof 5,943,555   Shiomi, Nishibayashi, Shikata August 24, 1999
  • 47)Field effect transistor using diamond 5,903,015   Shiomi, Nishibayashi, Shikata May 11, 1999
  • 46)Surface acoustic wave device and diamond base material for the same 5,891,557   Shikata, Nakahata, Higaki, Fujii, Hachigo April 6, 1999
  • 45)Surface acoustic wave device and diamond base material for the same 5,891,519   Shikata, Nakahata, Higaki, Fujii, Hachigo April 6, 1999
  • 44)Surface acoustic wave device 5,888,646   Takahashi, Yamamoto, Sakairi, Shikata, Nakahata, Higaki, Fujii, Kitabayashi March 30, 1999
  • 43)Diamond heat sink including microchannel therein and methods for manufacturing diamond heat sinks 5,874,775 Shiomi, Nakahata, Nishibayashi, Shikata February 23, 1999
  • 42)Field emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamond 5,844,252 Shiomi, Nishibayashi, Tomikawa, Shikata December 1, 1998
  • 41)Surface acoustic wave device 5,838,090  Nakahata, Higaki, Fujii, Kitabayashi, Shikata November 17, 1998
  • 40)Diamond-ZnO surface acoustic wave device 5,814,918  Nakahata, Higaki, Fujii, Kitabayashi, Shikata September 29, 1998
  • 39)Semiconductor lasers comprising rare earth metal-doped diamond 5,812,573  Shiomi, Nishibayashi, Shikata September 22, 1998
  • 38)Diamond-Zn0 surface acoustic wave device 5,783,896   Nakahata, Higaki, Fujii, Kitabayashi, Shikata July 21, 1998
  • 37)Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer 5,777,422 Kitabayashi,Nakahata, Higaki, Fujii, Shikata July 7, 1998
  • 36)Diamond wafer and method of producing a diamond wafer 5,776,246  Tanabe, Seki, Ikegaya, Fujimori, Nakahata, Shikata July 7, 1998
  • 35)Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature 5,757,032 Nishibayashi, Shiomi, Shikata May 26, 1998
  • 34)Surface acoustic wave device and diamond base material for the same 5,750,243  Shikata, Nakahata, Higaki, Fujii, Hachigo May 12, 1998
  • 33)Micro mechanical component and production process thereof 5,729,074  Shiomi, Nishibayashi, Shikata March 17, 1998
  • 32)Semiconductor device consisting of a semiconductor material having a deep impurity level 5,670,796 Nishibayashi, Shikata, Fujimori, Kobayashi September 23, 1997
  • 31)Ohmic electrode and method for forming it Toda, Nishibayashi, Tomikawa, Shikata September 16, 1997
  • 30)Diamond heat sink comprising synthetic diamond film 5,663,595   Shiomi, Nakahata, Nishibayashi, Shikata September 2, 1997
  • 29)Diamond-LiTaO.sub.3 surface acoustic wave device 5,646,468 Nakahata, Higaki, Fujii, Hachigo, Shikata July 8, 1997
  • 28)Method for forming heterojunction bipolar transistors 5,624,853   Shikata April 29, 1997
  • 27)Diamond semiconductor device with P-I-N type multilayer structure 5,600,156  Nishibayashi, Tomikawa, Shikata February 4, 1997
  • 26)Surface acoustic wave device 5,565,725  Nakahata, Higaki, Fujii, Hachigo, Shikata October 15, 1996
  • 25)Orientational material, orientational substrate and surface acoustic wave device 5,565,724  Hachigo, Nakahata, Higaki, Fujii, Shikata October 15, 1996
  • 24)Electron device 5,552,613  Nishibayashi, Tomikawa, Shikata September 3, 1996
  • 23)Heterojunction bipolar transistor 5,536,952  Shikata July 16, 1996
  • 22)Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same 5,527,735  Tomikawa, Nishibayashi, Shikata June 18, 1996
  • 21)Polycrystalline diamond substrate and process for producing the same 5,501,909   Higaki, Nakahata, Hachigo, Shikata March 26, 1996
  • 20)Method of polishing/flattening diamond 5,500,077  Nishibayashi, Shikata March 19, 1996
  • 19)Method of manufacturing a surface acoustic wave element 5,497,726   Shikata, Hachigo, Nakahata, Higaki March 12, 1996
  • 18)Stacked piezoelectric surface acoustic wave device with a boron nitride layer in the stack 5,463,901   Hachigo, Nakahata, Shikata, Fujimori November 7, 1995
  • 17)Surface acoustic wave element 5,446,329   Nakahata,Hachigo, , Shikata August 29, 1995
  • 16)Surface acoustic wave device and method of manufacturing the same 5,426,340   Higaki, Nakahata, Hachigo, Shikata June 20, 1995
  • 15)Method for manufacturing a surface acoustic wave device 5,401,544   Nakahata, Shikata, Hachigo, Fujimori March 28, 1995
  • 14)MIS electrode forming process 5,393,680   Shikata February 28, 1995
  • 13)Method for producing a surface acoustic wave device 5,390,401   Shikata, Nakahata, Hachigo, Fujimori February 21, 1995
  • 12)Semiconductor device including semiconductor diamond 5,382,809   Nishibayashi, Tomikawa, Shikata January 17, 1995
  • 11)Method for etching diamond 5,344,526   Nishibayashi, Shikata September 6, 1994
  • 10)Surface acoustic wave element and method of manufacturing the same 5,343,107   Shikata, Hachigo, Nakahata, Higaki August 30, 1994
  • 9)Method of manufacturing a surface acoustic wave device 5,320,865   Nakahata, Hachigo, Shikata, Fujimori June 14, 1994
  • 8)Surface acoustic wave device 5,294,858   Nakahata, Hachigo, Shikata, Fujimori March 15, 1994
  • 7)Method of making a hetero-junction bipolar transistor 5,264,379   Shikata November 23, 1993
  • 6)Process for preparing a superconducting thin film of compound oxide 5,235,398  Nakanishi, Shikata, Itozaki May 20, 1992
  • 5)Surface acoustic wave device 5,235,236   Nakahata, Shikata, Hachigo, Fujimori August 28, 1992
  • 4)Method for forming an oxide superconducting film having different crystal orientation on different regions of a Si substrate 5,225,398  Nakanishi, Shikata, Itozaki March 26, 1992
  • 3)Method for manufacturing a field effect transistor using spacers of different thicknesses 4,962,054   Shikata March 27, 1989
  • 2)Method of producing the gate electrode of a field effect transistor 4,859,618   Shikata, Hayashi November 19, 1987
  • 1)Method of annealing a compound semiconductor substrate 4,772,489   Shikata September 19, 1986
  • EC登録特許
  • USとほぼ同様の登録状況。
  •  調査報告書
  • 3) 経済産業省委託(社)ニューダイヤモンドフォーラム技術調査報告書,(分担執筆)(2006)
  • 2) 経済産業省委託 製造産業技術等対策調査 (ファインセラミックス及びダイヤモンド技術俯瞰図)調査報告書(分担執筆) 10章1 (2008)
  • 1) NEDO委託「ダイヤモンド系材料の技術開発と省エネ効果に関する調査」報告書、(代表者 及び 執筆) (2009)
  •  受賞等
  • 9)2015年度日本トライボロジー学会TROL論文賞  “Friction modification by shifting of phonon energy dissipation in solid atoms”, A.Kajita, M.Tohyama, H.Washizu,T.Ohmori,H.Watanabe and S.Shikata,Tribology,10 (2015)pp.156-161
  • 8)第28回ダイヤモンドシンポジウム 優秀講演賞「フィラメントCVD法によるダイヤモンド大面積ホモエピ成長」大曲新矢、山田英明、茶谷原昭義、鹿田真一
  • 7)The 8th International Workshop “Strong Microwaves and Terahertz Waves: Sources and Applications”"DIPLOMA" for outstanding presentation (2012)"Recent progress in R&D for the synthesis of large single-crystal diamond wafers by using MWPCVD" Yamada, A. Chayahara, Y. Mokuno, N. Tsubouchi, H. Umezawa, and S.Shikata
  • 6)5h International Conference on New Diamond and Nano Carbons (NDNC2011). Best Poster Award (2011)"Structure and Electric Property Analysis of Dislocations in Single Crystal Diamond (001)"Kato, H. Umezawa, H. Yamaguchi, T. Teraji and S. Shikata
  • 5)4th International Conference on New Diamond and Nano Carbons (NDNC2010) Best Poster Awards (2010)"A method to fabricate single crystal diamond wafers with 1-inch size",Yamada, A.Chayahara, Y. Mokuno, N. Tsubouchi, S. Shikata, and N. Fujimori
  • 4)4th International Conference on New Diamond and Nano Carbons (NDNC2010) Poster Awards (2010)"Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence",H.Umezawa, A.Omer and S.Shikata
  • 3)第21回ダイヤモンドシンポジウム ポスター賞 “ダイヤモンドショットキーダイオードにおける耐圧構造”、池田、梅澤、辰巳、鹿田(2007)
  • 2)住友電気工業㈱ 研究開発部門 優秀賞 光通信用ダイヤモンドSAWデバイスの開発 (1997)鹿田真一、中幡英章、藤井知、桧垣賢一郎他3名
  • 1)Real Innovation Award  米 材料学会(1996)受賞論文" High-frequency bandpass filter using poly crystalline diamond",S.Shikata, H.Nakahata, A.Hachigo, and N.Fujimori, Diamond and Related Materials, 2, 1197~1202 (1993)
  • 外部資金プロジェクト等(産総研入所後以降のみ 2005~)
  • 進行中
  • 科学研究費補助金 (B) (2019-2022)(代表)
  •  ダイヤモンド欠陥の同定と低減に関する研究
  • 総務省SCOPE (2019)
  •  高周波用薄膜ダイヤモンド弾性表面波デバイスの開発 (代表)
  • 完了
  • キャノン財団 研究助成(2013~2014)ダイヤモンドによる単一プロトン核スピン磁気共鳴センシング (分担者)
  • NEDO 省エネルギー革新技術開発事業 挑戦研究 (2009-2011)冷却フリー ダイヤモンド省エネパワーデバイス  (研究PJ代表者)
  • 科学研究費補助金 PJ  (2008-2012)トライボプラズマ応用技術   (分担者)
  • 経済産業省 地域イノベーションPJ (2008~2009)F2発生用ダイヤモンド電極 (分担者)
  • 経済産業省 地域コンソーシアムPJ (2007~2008)F2発生用ダイヤモンド電極 (分担者)
  • 科学研究費補助金 PJ  (2006-2009)高品質ダイヤモンド薄膜の評価技術  (分担者)
  • NEDOナノテク・先端部材実用化研究開発 (2006~2008)ダイヤモンド電子源 (分担者)
  • SIP(戦略的イノベーション創造プログラム)/次世代パワーエレクトロニクス(2014-2015)ダイヤモンドパワーデバイス用ウェハの研究開発(研究開発責任者)
  • 科学研究費補助金 (A)(2013-2016)低欠陥ダイヤモンドウェハ(研究代表者)
  • JST原子力システム研究開発事業(安全基盤技術研究開発) (2012-2015)過酷事故環境に適用可能なダイヤモンド半導体デバイス (分担
  • 科学研究費補助金 (B) (2016-2018)軽元素同位体制御工学の実現に向けたダイヤモンドの物性解明(代表)
  • 科学研究費補助金 (S)(2014-2018)ダイヤモンド量子センシング 慶応大 伊藤教授代表(分担者)
  • 科学研究費補助金 (A)(2014-2017)高エネルギーイオン大気取り出し窓兼位置敏感型検出器としてのダイヤモンド薄膜の研究 量子研 神谷主席代表(分担者)
  • 村田財団研究助成 (2018)(代表)多結晶ダイヤモンド高速基板を用いた高周波デバイス
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