研究業績

書籍 Books
14) 次世代パワー半導体の開発動向と応用展開第2章4（2021）シーエムシ―出版、鹿田真一 ISBN978-4-7813-1613-0
13) DLCの基礎と応用展開　　第2章11　（2016）シーエムシ―出版、鹿田真一
ISBN978-7813-1167-8
12) 次世代パワー半導体の高性能化と産業展開　第7章（2015）シーエムシ―出版、鹿田真一
ISBN978-4-7813-1076-3
11) パワーエレクトロニクスの新展開　3章、普及版　（2015）　シーエムシ―出版、鹿田真一
ISBN978-4-7813-1029-9
11) パワーエレクトロニクスの新展開　3章、　（2009）　シーエムシ―出版、鹿田真一
ISBN978-4-7813-0137-2
9) ダイヤモンドエレクトロニクスの最前線　普及版　（監修　及び17章）（2014）シーエムシ―出版、　鹿田真一
ISBN978-4-7813-0889-0
10) 次世代パワー半導体　第二編　第三章、　（2009）エヌティーエス出版、鹿田真一
ISBN978-4-86043-262-1
9) ダイヤモンドエレクトロニクスの最前線　（監修　及び17章）（2008）　シーエムシ―出版、監修　藤森直治、鹿田真一　17章　鹿田真一
ISBN978-4-7813-0049-8
8)ダイヤモンド技術総覧　ISBN978-4-9902720-9-8　（2004）６章５、９章３エヌジーティー出版、　鹿田真一
7) "Diamond Surface Acoustic Wave Device", Thin Film Diamond, Chapter 8, （2004）　Elsevier Inc. Academic Press, S. Shikata, H. Nakahata
ISBN0-12-752186-0
6) 弾性波デバイス技術３章、　　（2004）オーム社、鹿田真一
ISBN4-274-03630-8
5) 高周波用電子材料とデバイス第４章、（2003）ＴＩＣ社、鹿田真一
4) 先端高機能材料５編、　　（2001）　ＮＧＴ社　鹿田真一
3) "Semiconduting Diamond and Diamond Devices", Electric Refractory Materials, Chapter 17,　（2000） Marcel Dekker, Inc. New York, S. Shikata and N.Fujimori
ISBN0-8247-0049-X
2) "CVD Diamond for Surface Acoustic Wave Filters", Low-Pressure Synthetic Diamond, Chapter 14 （1998）Springer Verlag、 Berlin Heidelberg, S.Shikata
ISBN3-540-63619-6
1) 高周波セラミックス材料とその応用４章、（1998）　　ＴＩＣ社、鹿田真一
$Electric Refractory Materials$

査読論文 Papers
2021

222) ”Effect of surface irregularities on diamond Schottky barrier diode with threading dislocations”,
N.Mikata, M.Takeuchi, N. Ohtani, K.Ichikawa, T.Teraji, and S.Shikata Diam. Relat. Mat., 127 (2022) 109188

https://doi.org/10.1016/j.diamond.2022.109188
221) ”Complete analysis of dislocations in single crystal diamonds” ,Y. Sato, K. Miyajima and S. Shikata

Diam. Relat. Mat., 126(2022)109129

https://doi.org/10.1016/j.diamond.2022.109129
220) “Analysis method of diamond dislocation vectors using reflectance mode X-ray topography”,
S.Shikata, K.Miyajima, and N.Akashi
Diam.Relat.Mat., 118 (2021) 108502
doi.org/10.1016/j.diamond.2021.108502
219) “Forbidden X-ray diffraction of highly B doped diamond substrate”,
K. Kouda, Y.Sato, M.Takeuchi, H.Takahashi and S. Shikata
Jap.J.Appl.Phys., 60 (2021) 071002
doi.org/10.35848/1347-4065/ac0b23
218) “Polarized Raman spectroscopy of phophorous doped diamond films”,
M.Matsuoka, Y.Tsuchida, N.Ohtani, T.Yamada, S.Koizumi and S.Shikata
Diam.Relat. Mat., 114 (2021) 108283
doi.org/10.1016/j.diamond.2021.108283
217) “High frequency surface acoustic wave resonator with ScAlN / hetero-epitaxial diamond”,
Y. Kobayashi , T. Tsuchiya, M. Okazaki, Y. Asao , K. Hashimoto, and S. Shikata
Diam. Relat. Mat., 111 (2021) 108190
doi.org/10.1016/j.diamond.2020.108190
2020
216) “Influence of threading dislocation on diamond Schottky barrier diode characteristics”,
N.Akashi, N.Fujimaki, and S.Shikata
Diam.Relat..Mat., 109 (2020) 108024
doi.org/10.1016/j.diamond.2020.108024
215) “X-ray absorption near edge structure and extended X-ray absorption fine structure study of P doped (111) diamond”,
S.Shikata, K.Yamaguchi , A.Fujiwara, Y.Tamenori, K.Tsuruta, T.Yamada, S.S.Nicley, K.Haenen and S.Koizumi
Diam.Relat.Mat., 105 (2020)107769
doi.org/10.1016/j.diamond.2020.107769
214) “Dislocation vector analysis method of deep dislocation having c-axis segment in diamond”,
S.Shikata and N.Akashi,
Material Science Forum, 1004 (2020) PP.519-524
213)“Intrinsic exciton transitions of isotopically purified 13C studied by photoluminescence and transmission spectroscopy”,
R.Ishii, S. Shikata, T. Teraji, H. Kanda, H. Watanabe, M. Funato, and Y. Kawakami,
Jap.J.Appl.Phys., 59 (2020) 010903
doi.org/10.7567/1347-4065/ab5b77
212)“Evaluation of diamond mosaic wafer crystallinity by electron backscatter diffraction”,
A.Matsushita, N. Fujimori, Y. Tsuchida, N. Ohtani, D. Dojima, K. Koide, T. Kaneko and S.Shikata
Diam.Relat.Mat., 101 (2020) 107558
doi.org/10.1016/j.diamond.2019.107558
2019
211)“Removing Non-Size-Dependent Electron Spin Decoherence of Nanodiamond Quantum Sensorsby Aerobic Oxidation”,
R. Tsukahara, M. Fujiwara, Y. Sera, Y.Nishimura,Y. Sugai, C. Jentgens, Y. Teki, H.Hashimoto, and S.Shikata,
ACS Applied Nano Materials, 2 (2019) pp.3701-3710
210)“Evaluation of highly B doped high pressure and high temperature diamond crystallinity by electron backscatter diffraction”,
A.Matsushita, Y.Tsuchida, M.Matsuoka, N.Ohtani, K.Ashida, D.Dojima, K.Koide, T.Kaneko and S.Shikata,
Jap.J.Appl.Phys., 58, (2019)065504
doi:10.7567/1347-4065/ab1c8a
209)“Monitoring spin coherence of single nitrogen-vacancy centers in nanodiamonds during pH changes in aqueous buffer solutions”,
M.Fujiwara, R.Tsukahara,Y.Sera, H.Yukawa,Y.Baba, S.Shikata, and H.Hashimoto,
RSC Advances, 9 (2019) pp.12606-12614
doi: 10.1039/c9ra02282a
208) “Dislocation analysis of homoepitaxial diamond (001) film grown with oxygen feeding by synchrotron radiation light X-ray topography”,
S.Shikata, Y. Matsuyama, and T.Teraji
Jap.J.Appl.Phys.,58(2019)045503　doi: 10.7567/1347-4065/ab0541
2018
207) “Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy”,
R.Ishii, S.Shikata, T.Teraji, H.Kanda, H. Watanabe, M. Funato, and Y.Kawakami,
Jap.J.Appl.Phys.,58 (2018) 010904 http://iopscience.iop.org/article/10.7567/1347-4065/aaef3e/meta
206)Observation of rotational Brownian motion of single diamond nanoparticles”,
M.Fujiwara, Y.Shikano, R.Tsukahara, S.Shikata, and H.Hashimoto,
Scientific Reports, 8 (2018) 14773 DOI:10.1038/s41598-018-33041-6
205) “Precise measurements of diamond lattice constant”,
S.Shikata, T.Tanno, T.Teraji, H.Kanda,T.Yamada and J.Kushibiki,
Jap.J.Appl.Phys., 57(2018) 111301 https://doi.org/10.7567/JJAP.57.111301
204) ” Influence of dislocations to the diamond SBD reverse characteristics”,
N.Akashi, A.Seki, H.Saitoh, F.Kawai and S.Shikata,
Material Science Forum, 924(2018) pp.212-216 https://doi.org/10.4028/www.scientific.net/MSF.924.212
203) “Dislocation analysis of p type and insulating HPHT diamond seed crystals”,
S.Shikata, E.Kamei, K.Yamaguchi, Y. Tsuchida and H. Takahashi,
Material Science Forum, 924(2018) pp.208-211 https://doi.org/10.4028/www.scientific.net/MSF.924.208
202) “Prospect and challenges of diamond wafer toward power electronics”,
S.Shikata,
Int’l J. Automation Technol., 12 (2018) pp.175-178　doi: 10.20965/ijat.2018.p0175
2017
201)“Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate”,
H.Umezawa, S.Shikata, Y.Kato, Y.Mokuno, A.Seki, H.Suzuki, T.Bessho,
Jpn. J. Appl. Phys., 56 (2017) 011301
200) “X-ray absorption fine structure study on heavily P doped (111) and (001) diamond”,
S.Shikata, K.Yamaguchi, A.Fujiwara, Y.Tamenori, J.Yahiro, M.Kunisu and T.Yamada
Applied Physics Letters, 110 (2017) 072106http://dx.doi.org/10.1063/1.4975062
199)“Evaluation of p+ HPHT diamond substrate for power device application”,
S.Shikata, Y.Tsuchida, K.Yamaguchi, E.Kamei, D.Fukunaga, Y.Tabuchi and N.Ohtani,
Diamond and Related Materials, 73(2017) pp.241-247
2016
198）“High performance diamond radiation detectors fabricated using productive lift-off method”,
T.Shimaoka, J.Kaneko, M.Tsubota, H.Watanabe, A.Chayahara, H.Umezawa and S.Shikata,
European Physical Letter, 113 (2016) 62001
197）“Single crystal diamond wafer for high power electronics”,
S.Shikata,
Diamond and Related Materials, 65 (2016) pp.168-175
Open access: http://www.sciencedirect.com/science/article/pii/S0925963516300759
196)“Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition”,
H.Watanabe, H.Umezawa,T.Ishikawa, K.Kaneko, S.Shikata, J.I.Hayase, and K.M.Itoh,
IEEE Transactions on Nanotechnology, 15 (2016) pp.614-618
195)“A diamond 14MeV neutron energy spectrometer with energy resolusion”,
T.Shimaoka, J.H.Kaneko, K.Ochiai,M.Tsubota,H.Shinmmyo, A.Chayahara, H.Umezawa, H.Watanabe, S.Shikata, M.Isobe and M.Osakabe,
Review of Scientific Instruments, 87(2016) 023503
194) “Investigation of Electrically-active Deep Levels in Single-crystalline Diamond by Particle-induced Charge Transient Spectroscopy”,
W.Kada, Y. Kambayashi, Y.Ando, S.Onoda, H.Umezawa, Y. Mokuno, S.Shikata, Makino, M. Koka, O.Hanaizumi, T.Kamiya, and T.Ohshima,
Instruments and Methods in Physics Research B, 372 (2016) pp.151-155
193) “Whole diamond stylus for the long play phonograph”,
S.Shikata, S.Yamamoto, K.Maeda, K.Nakagawa, and S.Kitaoka,
Diamond and Related Materials, 63(2016) pp.232-235
192) “Boron inhomogeneity of single-crystal diamond substrates caused by structural defects: confocal micro-Raman mapping investigations”,
K. Srimongkon, S.Ohmagari, Y. Kato, V.Amornkitbamrung, and S.Shikata,
Diamond and Related Materials, 63 (2016) pp.21-25
191) “Crystal Orientation Dependence of Piezoresistivity in Boron Doped Single Crystalline Diamond Films”,
K.Takenaka, H. Umezawa, S.Kato, A. Chayahara, and S.Shikata,
Diamond and Related Materials, 63 (2016) pp.218-221
190) “Characterizations of etch pits formed on single crystal diamond surface using oxygen/hydrogen plasma surface treatment”,
N. Tsubouch, Y. Mokuno, and S.Shikata,
Diamond and Related Materials, 63 (2016) pp.43-46
2015
189) “Unintentional tungsten incorporation in diamond during hot-filament chemical vapor deposition”,
S.Ohmagari, K.Srimongkon, V.Amornkitbamrung, H.Yamada, A.Chayahara, and S.Shikata,
Trans. Mat. Soc. Japan 40 (2015) pp.47-50
188) “Status of beam line detectors for the Big RIPS fragment separator at RIKEN RI Beam Factory: issues on high rates and resolution”,
Y. Sato, N. Fukuda, H. Takeda, D. Kameda, H. Suzuki, Y. Shimizu, D.S.Ahn, D. Murai, N. Inabe, T. Shimaoka, M.Tsubota, J.H.Kaneko, A.Chayahara, H.Umezawa, S.Shikata, H.Kumagai, H. Murakami, H. Sato, K. Yoshida, and T. Kubo,
J. Phy. Soc. Jpn, 6 (2015) 030124
187) “Response measurement of single crystal CVD diamond radiation detector for intense X-rays aiming at burn-history measurement on an inertial confinement fusion with fast ignition”,
T. Shimaoka, J.H. Kaneko, Y. Arikawa, M. Isobe, Y. Sato, M. Tsubota, T. Nagai, S. Kojima, Y. Abe, T. Sakata, S. Fujioka, M. Nakai, H. Shiraga, H. Azechi, A. Chayahara, H. Umezawa, and S. Shikata,
Rev. Sci. Insturm., 86 (2015) 053503
186) ” High-temperature characteristics of charge collection efficiency using single CVD diamond detectors”,
M.Tsubota, J.H. Kaneko, D.Miyazaki, T. Shimaoka, K.Ueno, T.Tadokoro, A.Chayahara, H.Watanabe, Y.Kato, S.Shikata, and H. Kuwabara,
Nucl. Instrum. Meth. A, 789(2015)50-56,.
185) “Low resistivity p+ diamond (100) films fabricated by hot-filament chemical vapor deposition”,
S.Ohmagari, K.Srimongkon, H.Yamada, H.Umezawa, N.Tsubouchi, A.Chayahara, S.Shikata and Y.Mokuno,
Diamond and Related Materials, 58 (2015) pp.110-114
184) “Friction modification by shifting of phonon energy dissipation in solid atoms”,
A.Kajita, M.Tohyama, H.Washizu, T.Ohmori, H.Watanabe and S.Shikata,
Tribology,10 (2015)pp.156-161
(Paper Award 2015 Japanese Society of Tribologist)
183)”Effects of crystallographic orientation on the homoepitaxial overgrowth on tiled single crystal diamond clones”,
H. Yamada, A. Chayahara, Y.Mokuno, Y. Kato, and S.Shikata,
Diamond and Related Materials, 57 (2015) pp.17-21
1882) “X-ray topographic study of defect in p− diamond layer of Schottky barrier diode”,
Y.Kato, H. Umezawa, and S.Shikata,
Diamond and Related Materials, 57(2015) pp.22-27
181) “Numerical microwave plasma discharge study for the growth of large single-crystal diamond”,
H.Yamada, A. Chayahara, Y.Mokuno, and S.Shikata,
Diamond and Related Materials, 54, April (2015) pp.9-14
2014
180) “Radiation hardness of single crystal CVD diamond detector for MeV energy protons “,Y. Sato, T. Shimaoka, J.H. Kaneko, H. Murakami, M. Isobe, M. Osakabe, M. Tsubota, A. Chayahara, H. Umezawa, S. Shikata, Nucl. Instrum. Meth. A, 784(2014)147-150,.
179) “Diamond Metal-Semiconductor Field Effect Transistor With Breakdown Voltage Over 1.5kV”,H.Umezawa, T.Matsumoto and S.Shikata, IEEE Electron Device Letters, 35,(2014) pp.1112-1114
178)“Large-area high-quality single crystal diamond”, M.Schreck , J.Asmussen , S.Shikata , J-C. Arnault ,and N. Fujimori, MRS Bulletin 39,(2014)pp.504-510
177) “Evaluation method for grown-in dislocations in CVD single crystal diamond using plasma surface treatment”, N.Tsubouchi and S. Shikata, Jap.J.Appl.Phys., 53(2014)068010
176) ”Nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by lift-off process”, Y. Mokuno, Y Kato, N. Tsubouchi, A. Chayahara, H. Yamada, and S. Shikata, Applied Physics Letters, 104 (2014) 252109
175) ”Characterization of free-standing single-crystal diamond prepared by hot-filament chemical vapor deposition”, S.Ohmagari, H.Yamada, H.Umezawa,A.Chayahara,T.Teraji and S.Shikata, Diamond and Related Materials, 48(2014) pp.19-23
174) “Pulse shape distortion of output signals from single-crystal CVD diamond detector in few-GHz broadband amplifiers”,Y.Sato, T.Shimaoka, J.H. Kaneko, H.Murakami, D.Miyazaki, M.Tsubota, A.Chayahara, H.Umezawa, and S.Shikata, Euro. Phys. Let., 106(2014) 22001
173)” X-ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-irradiated Precision Polished Substrate”,Y.Kato, H.Umezawa and S.Shikata, Acta physica polonica A,125 (2014)pp. 969-971
172) “Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications”,H.Umezawa, S.Shikata, and T.Funaki, Jap. J. Appl. Phys., 53 (2014) 05FP06
171) “Investigation of Surface Magnetic Noise by Shallow Spins in Diamond”, T. Rosskopf, A. Dussaux, K. Ohashi, M. Loretz, R. Schirhagl, H. Watanabe, S. Shikata, K. M. Itoh, and C. L. Degen,Phys. Rev. Lett. 112, (214)147602
170) “Effect on Surface Paramagnetism on Spin Relaxation in Nitrogen-Vacancy Centers in Diamond”,T.Rosskopf, A.Dussaux, K.Ohashi, M.Loretz, R.Schirhagl, H.Watanabe, S.Shikata, K.M.Itoh, and C.L.Degen, Phys.Rev.Lett., 112, 147602 (2014)
169)”A 2-in. mosaic wafer made of a single-crystal diamond”, H.Yamada, A.Chayahara, Y.Mokuno, Y.Kato and S.Shikata, Appl. Phys. Lett. 104 , 102110 (2014)
2013
168) “1 ohm on-resistance diamond vertical Schottky barrier diode at 250C”, H.Umezawa, Y.Kato and S.Shikata, Applied Physics Express, 6 (2013) 011302
167)”Atomic force microscopy observations of a single crystal diamond surface lifted-off via ion implantation”, Y. Mokuno, A. Chayahara, N. Tsubouchi, H. Yamada and S. Shikata, Diamond and Related Materials, 31(2013) pp. 6-9
166) “Effect of an Ultraflat Substrate on the Epitaxial Growth of Chemical Vapor Deposited Diamond”,　Y.Kato, H.Umezawa, S.Shikata and M.Touge, Applied Physics Express,6 (2013)025506
165) “Uniform growth and repeatable fabrication of inch size wafers of single-crystal diamond”, H.Yamada, A.Chayahara, Y.Mokuno, N.Tsubouchi and S.Shikata, Diamond and Related Materials, 33(2013)pp.27-31
164) “Low propagation loss in a one-port SAW resonator fabricated on single-crystal diamond for super high frequency applications”, S.Fujii, T.Odawara, H.Yamada, T.Omori, K.Hashimoto, H.Torii, H.Umezawa and S.Shikata, IEEE Ultrasonics, Ferroelectrics and frequency control, 60 (2013)pp.986-992
163) “Vertical Diamond Schottky Barrier Diode Fabricated on Insulating Diamond Substrate Using Deep Etching Technique”, M.Nagase, H.Umezawa and S.Shikata, IEEE Trans. Electron Device,60 (2013)pp.1416-1420
162) “High-sensitivity magnetometry based on quantum beats in diamond nitrogen-vacancy centers”,K.Fang, V.M. Acosta, C. Santori, Z.Huang, K. Itoh, H.Watanabe, S. Shikata,and R. G. Beausoleil, Phys.Review Lett., 110 (2013) 130802
161) ”One-port SAW Resonators Fabricated on Single-Crystal Diamond”, S.Fujii, H.Yamada, T. Omori, K.Hashimoto, H. Torii, H.Umezawa, and S. Shikata, IEEE MTT-S, (2013) pp. TU1D-6-1~4
160) “Development of diamond power electronics devices”, S.Shikata, and H.Umezawa, Synthesiology, 6 (2013) pp.152-161
159) “Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model”, A.Nawawi, K.J.Tseng, Rusli, G.A.J.Amartunga, H.Umezawa and S.Shikata, Diamond and Related Materials, 35(2013)pp.1-6
158) “Design and optimization of planar mesa termination for diamond Schottky barrier diodes”, A.Nawawi, K.J.Tseng, Rusli, G.A.J.Amartunga, H.Umezawa and S.Shikata, Diamond and Related Materials, 35 (2013) pp.51-57
157) "Negatively Charged Nitrogen-Vacancy Centers in a 5 nm Thin 12C Diamond Films,” K. Ohashi, T. Rosskopf, H.Watanabe, M. Loretz, Y. Tao, R. Hauert, S. Tomizawa, T. Ishikawa, J. Ishi-Hayase, S.Shikata, C. L. Degen, and K. M. Itoh, Nano Lett. 13, (2013), pp. 4733-4738.
156) “Isotope composition dependence of the band-gap energy in diamond”,H.Watanabe, T.Koretsune, S.Nakashima, S.Saito and S.Shikata, Phsical Review B88, (2013) 205420
155) “Leakage current analysis of diamond Schottky barrier diodes by defect imaging”,H.Umezawa, N.Tatsumi,Y.Kato and S.Shikata, Diamond and Related Materials, 40(2013)pp.56-59
154) “Structure, radiation damage and annealing effects in diamond implanted with a high fluence of a few MeV carbons”, N.Tsubouchi and S.Shikata, Nuclear Instruments and Methods in Physics Research B315(213)pp.165-168
153)“One-port SAW Resonators Fabricated on Single-Crystal Diamond,” S.Fujii, H.Yamada, T.Omori, K.Hashimoto, H.Torii, H.Umezawa, and S.Shikata, International Microwave Symp. (2013) TU-1D6-1~4
152) “Pulse height reduction effects of single crystal CVD diamond detector for low-energy heavy ions”,Y. Sato, T. Shimaoka, J.H. Kaneko, H. Murakami, D. Miyazaki, M. Tsubota, A.Chayahara, H.Umezawa, S.Shikata, Euro. Phys. Let., 104(2013)22003 1-4
151) “Optical absorptions, electrical properties and related band structures of diamond with high-dose B, C, N or P implantation at elevated temperatures”, N.Tsubouchi and S.Shikata, Transactions of the Materials Research Society of Japan,38-3,(2013)pp.431-434
2012
150) “High temperature switching operation of a power diamond Schottky barrier diode”, T.Funaki, M.Hirano, H.Umezawa and S.Shikata, IEICE Electronics Express, 9 (2012) pp.1835-1841
149) "High temperature application of diamond power device", H.Umezawa, M. Nagase, Y. Kato and S. Shikata, Diamond and Related Materials 24, (2012) pp. 201-205
148) "Local stress distribution of dislocations in homoepitaxial chemical vapor deposite single-crystal diamond", Y. Kato, H. Umezawa, S. Shikata and T.Teraji, Diamond and Related Materials 23 (2012) pp.109-111
147) "Optical and Spin Coherence Properties of Nitrogen-Vacancy Centers Placed in a 100 nm Thick Isotopically Purified Diamond Layer", T.Ishikawa, K.M.C. Fu, C.Santori, V. M. Acosta, R.G. Beausoleil,H. Watanabe, S.Shikata, and K.M. Itoh, Nano Lett. 12 (4) 2012, pp.2083-2087
146) "Characterization of a sandwich-type large CVD single crystal diamond particle detector fabricated using a lift-off method", N.Tsubouchi, Y.Mokuno, A.Kakimoto, Y.Konno, H.Yamada, A.Chayahara, J.H. Kaneko, F.Fujita and S.Shikata, Diamond and Related Materials 24 (2012) pp.74-77
145) "Growth and evaluation of self-standing CVD diamond single crystals on off-axis (001) surface of HP/HT type IIa substrates", J.H.Kaneko, F.Fujita, Y.Konno, T.Gotoh, N.Nishi, H.Watanabe, A.Chayahara, H.Umezawa, N.Tsubouchi, S.Shikata, M.Isobe, Diamond and Related Materials 26 (2012), pp.45-49
144) "Structural analysis of dislocations in type-IIa single-crystal diamond", Y. Kato, H.Umezawa, H. Yamaguchi,S.Shikata, Diamond and Related Materials 29 (2012), pp.37-41
143) "X-ray Topography Used to Observe Dislocations in Epitaxially Grown Diamond Film", Y. Kato, H.Umezawa, H. Yamaguchi, and S.Shikata, Jpn. J. Appl. Phys. 51 (2012) pp. 090103-1~5
142) "Selective-Area Growth of Thick Diamond Films Using Chemically Stable Masks of Ru/Au and Mo/Au", M.Nagase, K.Watanabe, H.Umezawa, and S.Shikata, Japanese Journal of Applied Physics 51 (2012) 070202
141) "Lattice structure of a freestanding nitrogen doped large single crystal diamond plate fabricated using the lift-off process: X-ray diffraction studies", N.Tsubouchi, H.Umezawa, Y. Mokuno, A.Chayahara and S.Shikata, Diamond and Related Materials, 25(2012) pp.119-123
140) “High Q surface acoustic wave resonators in 2-3GHz range using ScAlN/single crystalline diamond structure”, K.Hashimoto, T.Fujii, S.Sato, T.Omori, C.Ahn, A.Teshigahara, K.Kano, H.Umezawa and S.Shikata, IEEE Ultrasonics Symp. proc. (2012) pp.1926-1929
139) “Fabrication and fundamental characterizations of tiled-clones of single crystal diamond with 1-inch size”, H.Yamada, A.Chayahara, H. Umezawa, N. Tsubouchi, Y. Mokuno and S.Shikata, Diamond and Related Materials 24 (2012) pp.29-33
138) “Freestanding single crystal chemical vapor deposited diamond films produced using a lift-off method: Response to α-particles from 241Am and crystallinity”, N.Tsubouchi, Y.Mokuno, A.Kakimoto, F.Fujita, J.H. Kaneko, H. Yamada, A. Chayahara and S. Shikata, Nucl. Instrum. Methods Phys. Res. B, 286 (2012) pp.313-317
2011
137) “Improvement of crystal quality of a homoepitaxially grown diamond layer by a plasma etching treatment for a diamond substrate”, Yuta Konno, Junichi H Kaneko, Fumiyuki Fujita, Hideyuki Watanabe, Kei Sato, Akinori Kakimoto, Sinichi Shikata, Akira Homma, Michihiro Furusaka, Progress in Nuclear Science and Technology, 1(2011)255
136) "Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence", H.Umezawa, Y.Kato, H.Watanabe, A.M.M.Omer, H.Yamaguchi, and S.Shikata, Diamond and Related Materials 20 (2011) pp 523-526
135) "Developments of elemental technologies to produce inch-size single-crystal diamond wafers", H.Yamada, A. Chayahara, Y. Mokuno, N. Tsubouchi, S. Shikata, and N. Fujimori, Diamond and Related Materials 20 (2011) pp. 616-619
134) "A model of reactive microwave plasma discharge for growth of single-crystal-diamond”, H.Yamada, A.Chayahara, Y.Mokuno and S. Shikata, Japanese Journal of Applied Physics 50 (1), pp. 01AB02-1-6
133) "Characterization of fast switching capability for Diamond Schottky barrier diode", T.Funaki, K.Kodama, H.Umezawa and S.Shikata, Materials Science Forum 679-680, (2011) pp.820-823
132) "Superlattice structures from diamond", H.Watanabe and S.Shikata, Diamond and Related Materials 20 (2011) pp. 980-982
131) "Low propagation loss in a one-port resonator fabricated on single-crystal diamond", S.Fujii, T.Odawara, T.Omori, K.Hashimoto, H.Torii, H.Umezawa, and S.Shikata, IEEE Ultrasonics Symp. Proc. (2011) pp.555-558
130) "Change of structural and electrical properties of diamond with high-dose ion implantation at elevated temperatures: dependences on donor/acceptor impurity species" N.Tsubouchi and S.Shikata, Nucl. Instrum. Methods Phys. Res. B, 286 (2012) pp.303-307
129) “Local stress-strain structure in CVD diamond observed by Raman peakshift mapping”, Y.Kato, H.Umezawa and S.Shikata, MRS proc., (2011)1282-0404
128) “CVD diamond dislocation observed by Xray topography,birefringence image abd cathodoluminescence mapping”, Y.Kato, H.Umezawa, H.Yamaguchi and S.Shikata, MRS proc., (2011) 1282-0519
2010
127) “Fabrication of 1 inch mosaic crystal diamond wafers”, H.Yamada, A.Chayahara, Y. Mokuno, H. Umezawa, S. Shikata, and N.Fujimori , Applied Physics Express, 3,(2010)051301
126) ”Crystallinity of freestanding large undoped single crystal diamond plates produced using pre-ion-implanted substrates and lift-off processes”,Nobuteru Tsubouchi, Y. Mokuno, A. Chayahara and S. Shikata, Diamond and Related Materials 19, (2010) pp. 1259-1262
125) “Characterization of Schottky barrier diodes on a 0.5-inch single-crystalline CVD diamond wafer” H. Umezawa, Y. Mokuno, H.Yamada, A. Chayahara and S. Shikata, Diamond and Related Materials 19, (2010) pp.208-212
124) “High Temperature Characteristics of Diamond SBDs”, H. Umezawa and S. Shikata, Materials Science Forum, 645-648, (2010) pp.1231-1234
123) “Characteristics of Diamond SBD’s fabricated on half inch size CVD wafer made by the direct wafer fabrication technique”, S. Shikata, H. Umezawa, H. Yamada, N. Tsubouchi, Y. Mokuno and A. Chayahara, Materials Science Forum, 645-648, (2010) pp.1227-1230
122) ”Parasitic resistance analysis of pseudovertical structure diamond Schottky barrier diode”, R.Kumaresan,Umezawa and S. Shikata, Physica Status Solidi A , 207 (2010) pp.1997-2001
121) “Vertical structure Schottky barrier diode fabrication using insulating diamond substrate”,R.Kumaresan,Umezawa and S. Shikata, Diamond and Related Materials 19, (2010) pp. 1324-1329
120) “Switching characteristics of a diamond Schottky barrier diode”, K.Kodama, T.Funaki, H.Umezawa, and S.Shikata, IEICE Electronics Express, 7, (2010)pp.1246-1251
119) “Resonant field emission from 2D-DOS on hydrogen terminated intrinsic diamond”, T. Yamada, S. Shikata and C. Nebel, Journal of Applied Physics 107, (2010) pp. 013705
118) “Measurement of charge carrier's transportation in a large size self-standing CVD single crystal diamond film fabricated using lift-off method”, F. Fujita, A. Kakimoto, J.H. Kaneko, N. Tsubouchi, Y. Mokuno, A. Chayahara, K. Sato, Y. Konno, A. Homma, S. Shikata, M. Furusaka, Diamond and Related Materials 19, (2010) pp. 162-165
117) “Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD”, Z.B.Feng, A.Chayahara, Y.Mokuno, H. Yamada and S.Shikata, Diamond and Related Materials 19, (2010) pp. 171-173
116) “Surface stress measurement with interference microscopy of thick homoepitaxial single-crystal diamond layers”, Z.B.Feng, A.Chayahara, H.Yamada, Y.Mokuno, N.Tsubouchi and S.Shikata, Diamond and Related Materials, 19, (2010) pp.1453-1456
2009
115) “Microwave plasma generated in a narrow gap to achieve high power efficiency during diamond growth”, H.Yamada, A.Chayahara, Y.Mokuno and S. Shikata, Diamond and Related Materials 18, (2009) pp.117-120
114) “Characterization of crystallinity of a large self-standing homoepitaxial diamond film”, N.Tsubouchi, Y. Mokuno, H.Yamaguchi, N.Tatsumi, A.Chayahara and S.Shikata, Diamond and Related Materials 18, (2009) pp.216-219
113) “Thermally Stable Schottky Barrier Diode by Ru / Diamond”,Kazuhiro Ikeda , H.Umezawa , R.Kumaresan and S.Shikata, Applied Physics Express, 2, (2009) 011202
112) “Device processing, fabrication and analysis of diamond pseudo-vertical Schottky barrier diodes with low leak current and high blocking voltage”,R. Kumaresan, H. Umezawa, N.Tatsumi, K. Ikeda, and S. Shikata, Diamond Related and Materials 18, (2009), pp.299-302
111) “Fabrication of a Film Bulk Acoustic Wave Resonator from Nano-Crystalline Diamond”, S. Shikata, S. Fujii, and T. Sharda, Diamond and Related Materials 18, (2009), pp.253-257
110) “Fabrication of a field plate structure for diamond Schottky barrier diodes”, K.Ikeda, H.Umezawa, N.Tatsumi, R.Kumaresan and S. Shikata, Diamond and Related Materials 18 (2009), pp.292-295
109) “Recent progress of diamond device toward power application”, S.Shikata, K.Ikeda, R.Kumaresan, H. Umezawa and N. Tatsumi, Materials Science Forum Vols. 615-617, (2009) pp999-1002
108) “Device Characteristics Dependence on Diamond SDBs Area”, H.Umezawa, K.Ikeda, R. Kumaresan, N.Tatsumi and S.Shikata, Materials Science Forum Vols. 615-617, (2009) pp.1003-1006
107) “Device scaling of pseudo-vertical diamond power Schottky barrier diodes”, H.Umezawa, K. Ikeda, N.Tatsumi, K. Ramanujam, S. Shikata, Diamond and Related Materials, 18,(2009) pp.1196-1199
106)”Increase in Reverse Operation Limit by Barrier Height Control of Diamond Schottky Barrier Diode”, H.Umezawa, N.Tatsumi, S.Shikata, K.Ikeda, R.Kumaresan, IEEE Electron Device Letters, 30 , (2009) pp.960-962
105)”Isotopic Homojunction Band Engineering from Diamond”, H.Watanabe, C.Nebel and S.Shikata, Science, 324, (2009) pp.1425-1427
104) “Cathodoluminescence Characterization of Nitrogen-doped Homoepitaxial Diamond Thin Film”, H.Watanabe, T Kitamura, S.Nakashima and S.Shikata, Journal of Applied Physics 105, (2009)093529
103) “Field emission properties of nano-structured phosphorus-doped diamond”, T.Yamada, C.E.Nebel and　S.Shikata, Applied Surface Science 256, (2009) pp. 1006-1009
102) “Core Level Photoelectron Spectroscopic Study on Oxidized Phosphorus-Doped (100) Diamond Surfaces after Vacuum Annealing”, S.Kumaragurubaran, T. Yamada, and S.Shikata, Japanese Journal of Applied Physics 48, (2009) 011602
2008
101) “Simulation with an improved plasma model utilized to design a new structure of microwave plasma discharge for chemical vapor deposition of diamond crystals”, H.Yamada, Y.Mokuno, A.Chayahara, and S.Shikata, Diamond Related Materials. 17, (2008) pp.494-497
100) “Numerical and experimental studies of high growth-rate over area with 1-inch in diameter under moderate input-power by using MWPCVD”,H. Yamada, A.Chayahara, Y.Mokuno and S.Shikata, Diamond and Related Materials 17, (2008) pp.1062-1066
99) “Edge termination technologies of p-type diamond Schottky barrier diodes”, K.Ikeda, H.Umezawa, and S.Shikata, Diamond and Related Materials, 17, (2008) pp.809-812
98) “Annealing effects in H- and O- terminated P doped diamond (111) surface”, S.Kumaragurubaran, T.Yamada, and S.Shikata, Diamond and Related Materials, 17, (2008) pp.472-475
97) “Effect of vacuum annealing on field emission from heavily phosphorus doped homoepitaxial (111) diamond” T. Yamada, S. Kumaragurubaran, C. Nebel and S. Shikata, Diamond Related Materials, 17, (2008) pp.745-748
96)“Simulation of mechanical properties of diamond membrane for application to electron beam extraction window”, S.Shikata and T.Yamada, Diamond and Related Materials, 17, (2008) pp.794-798
95) “Vacuum-annealing induced band bending in phosphorus-doped (111) diamond”, S.Kumaragurubaran, T.Yamada, and S.Shikata, Diamond and Related Materials 17,(2008) pp.1969-1971
94) “ICP etching of polycrystalline diamonds: fabrication of diamond nano-tips for AFM cantilevers”, H. Uetsuka, T, Yamada and S. Shikata, Diamond and Related Materials 17, (2008) pp.728-731
93) “Barrier height difference induced by surface terminations for field emission from Pdoped diamond”, Y.Kudo, T.Yamada, N.Yamagauchi,T.Masuzawa, I.Saitoh, S.Shikata and C.Nebel, MRS proc.,(2008)1039-1512
92) “Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (111) diamond”, T. Yamada, C.E. Nebel, K. Somu, S. Shikata, Applied Surface Science, 254, (2008) pp.7921-7924
2007　
91) “Reverse Leakage Current of Diamond Schottky Barrier Diode”, H.Umezawa, N.Tokuda, M.Ogura, S.Ri, H.Yoshikawa, and S.Shikata, Applied Physics Letters 90, (2007) 073506
90) “Cycle of two-step etching process using ICP for diamond MEMS applications”, T.Yamada, H.Yoshikawa, H. Uetsuka, S. Kumaragurubaran, N. Tokuda and S. Shikata, Diamond and Related Materials, 16, (2007) pp.996-999
89) “Field emission from reconstructed phosphorus-doped homoepitaxial diamond (111)”, T.Yamada, S. Kumaragurubaran, H. Uetsuka, C.E.Nebel, H. Yamaguchi, Ken Okano and S. Shikata, Physica Status Solidi A 204(9) (2007) pp.2957-2964
88) “Field emission characteristics of surface-reconstructed heavily phosphorus-doped homoepitaxial diamond”, T.Yamada, H.Yamaguchi, Y.Kudo, K.Okano, S.Shikata, C.E.Nebel, J. Vac. Sci. Technol. B 25(2), (2007)pp.528 - 531
87) “Predominant physical quantity dominating macroscopic surface morphology of diamond synthesized by microwave plasma CVD”, H. Yamada, Y. Mokuno, A. Chayahara, Y. Horino and S. Shikata, Diamond and Related Materials 16, (2007) pp.576-580
86) “Field emission from surface-modified heavily phosphorus-doped homoepitaxial (111) diamond”,T.Yamada, C.E.Nebel, K.Somu, H.Uetsuka, H.Yamaguchi, Y.Kudo, K.Okano, S.Shikata, Physica Status Solidi A 204, (2007) pp.2957-2964
85) “Field emission characteristics of surface-reconstructed heavily phosphorus-doped homoepitaxial diamond”, T. Yamada,H. Yamaguchi, Y.Kudo, K. Okano, S. Shikata, C.E. Nebel, Journal of Vaccuum Science Technology, B 25, (2007), pp.528-531
84) “Predominant physical quantity dominating macroscopic surface shape of diamond synthesized by microwave plasma CVD”, H. Yamada, Y. Mokuno, A. Chayahara, Y. Horino and S. Shikata, Diamond and Related Materials 16, (2007) pp.576-580
2006　
83) “Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling”,H.Umezawa, N.Tokuda, M. Ogura, S.G. Ri and S.Shikata, Diamond and Related Materials, 15, (2006) pp.1949-1953
82) “Field emission from H- and O-terminated heavily P-doped homoepitaxial diamond”, T.Yamada, H.Kato, S.Shikata, C.E.Nebel, H.Yamaguchi, Y.Kudo, and K.Okano, Journal of Vaccuum Science Technology B 24, (2006) pp. 967-970
81) “Field emission process of O-terminated heavily P- doped homoepitaxial diamond”,T. Yamada, D. Takeuchi, H. Kato, S.Shikata, H.Yamaguchi, K.Okano and C.E.Nebel, Diamond and Related Materials 15, (2006) pp.863-865
80) “Field emission from reconstructed heavily phosphorus-doped homoepitaxial diamond (111)”, T.Yamada, K.Okano,H.Yamaguchi, H.Kato, S.Shikata and C.E.Nebel, Applied Physics Letters 88, (2006) 212114
79) “Field emission characteristics of surface-reconstructed heavily phosphorus-doped homoepitaxial diamond”, T. Yamada, N. Yamaguchi, Y. Kudo, K.Okano, S.Shikata and C.E. Nebel, Journal of Vaccuum Science Technology B 25, (2006)
78) “Leakage current analysis of diamond Schottky barrier diode”, H.Umezawa, T.Saito, N.Tokuda, S-G. Ri, M. Ogura, H. Yoshikawa and S. Shikata, Applied Physics Letters 90, (2006)073506
77) “Smooth Surface Dry Etching of Diamond by Very High Frequency Inductive Coupled Plasma” , H.Yoshikawa, N. Fujimori and S. Shikata, New Diamond and Frontier Carbon Technology 16,(2006)pp.97-106
76)“Qualitative correspondences of experimentally obtained growth rate and morphology of single crystal diamond with numerical predictions of plasma and gas dynamics in microwave discharges for various substrate holder shapes”, H. Yamada, A. Chayahara, Y. Mokuno, Y. Soda, Y. Horino, S. Shikata and N. Fujimori、Japanese Journal of Applied Physics 10B (2006) pp.8177-8182
75)“Simulation of temperature and gas flow distributions in region close to a diamond substrate with finite thickness”,　H. Yamada, A. Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15 (2006) pp.1738-1742
74) “Numerical analyses of a microwave plasma chemical vapor deposition reactor for thick diamond syntheses”, H.Yamada, A.Chayahara,Y.Mokuno,Y.Horino and S.Shikata, Diamond and Related Materials, 15 (2006) pp.1389-1394
73) “Simulation of microwave plasmas concentrated on the top surface of a diamond substrate with finite thickness”, H. Yamada, A. Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15, (2006) pp.1383-1388
72）” Field emission from reconstructed heavily phosphorus-doped homoepitaxial diamond (111)”, T.Yamada, K. Okano, H. Yamaguchi, H. Kato, S. Shikata, and C.E. Nebel, Applied Physics Letters 88 , (2006) 212114
71)”Field emission process of O-terminated heavily P-doped homoepitaxial diamond”, T. Yamada, H. Kato, D. Takeuchi, S.Shikata, H.Yamaguchi, K.Okano, C.E. Nebel, Diamond and Related Materials 15, (2006) pp.863-865
70) “Field emission from H- and O-terminated heavily P-doped homoepitaxial diamond”, T. Yamada, H. Kato, S. Shikata, C.E. Nebel, H. Yamaguchi, Y. Kudo, K. Okano, Journal of Vaccuum Science Technology B 24 , (2006) pp.967-969
69)“Simulation of temperature and gas flow distributions in region close to a diamond substrate with finite thickness”,H.Yamada, A.Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15, (2006) pp.1738-1742
68)”Numerical analyses of a microwave plasma chemical vapor deposition reactor for thick diamond syntheses”, H.Yamada, A. Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15, (2006) pp.1389-1394
67)“Simulation of microwave plasmas concentrated on the top surface of a diamond substrate with finite thickness”,H.Yamada, A. Chayahara, Y. Mokuno, Y. Horino and S. Shikata, Diamond and Related Materials 15, (2006) pp.1383-1388
2005
66)“Simulation of the Characteristics of KNbO3 /Diamond Surface Acoustic Wave”, S.Shikata, A, Hachigo, H.Nakahata, and M.Narita, Diamond and Related Materials, 14, (2005) pp.167-172
65)“Improvements of Diamond SAW Device Characteristics and Applications to Communication Systems”, S.Shikata, S.Fujii, T.Uemura, K.Itakura, A.Hachigo, H.Kitabayashi ,H. Nakahata and Y.Takada, New Diamond and Frontier Carbon Technology 15, (2005) pp.349-361
64)“Self-aligned fabrication of single crystal diamond gated field emitter array”, T. Yamada, P. R. Vinod, D. H. Hwang. H. Yoshikawa, S.Shikata and N. Fujimori, Diamond and Related Materials,14, (2005) pp.2047-2050
63)“High Frequency surface acoustic wave devices based on LiNbO3/diamond multilayered structure”, E.Dogheche, D.Remiens and S. Shikata, Applied Physics Letters 87 (2005), 213503
62)“Effect of Crystalline Quality of Diamond Film to the Propagation Loss of Surface Acoustic Wave Devices”, S Fujii and S. Shikata, IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control 52 (10) (2005), pp.1817- 1822
2004
61)”Simulation of the Characteristics of SiO2/c-axis Oriented LiNbO3 on Diamond Surface Acoustic Wave”, S.Shikata, H.Nakahata and A.Hachigo, IEEE Ultrasonics, Ferroelectrics, and Frequency Control., 51, (2004) pp.1683-1689
60)“Simulation of the Characteristics of LiNbO3 /Diamond Surface Acoustic Wave”, S.Shikata, A.Hachigo, H.Nakahata, and M.Narita, IEEE Ultrasonics, Ferroelectrics, and Frequency Control., 51, (2004) pp.1308-1313
59)“800 V 4H-SiC RESURF-type Lateral JFETs”, K. Fujikawa, K. Shibata, T.Masuda, S.Shikata and H.Hayashi, IEEE Electron Dev. Lett., 25, pp 790-791 (2004)
2003
58)”Diamond-based surface acoustic wave devices”, H.Nakahata, S.Fujii , K.Higaki,　A.Hachigo, H.Kitabayashi, S.Shikata, and N.Fujimori, IEEE Semiconductor Science and Technology, 18, (2003) pp.ｐ96-104
2002　
57)” Low loss Diamond Surface Acoustic Wave Devices Using Small Grain Poly-Crystalline Diamond”, T.Uemura, S.Fujii, H.Kitabayashi, K.Itakura, A.Hachigo, H.Nakahata and S.Shikata, Jpn.J.Appl. Phys., 41 (2002) pp.3476~3479
56)”Equivalent Circuit Parameters of Surface Acoustic Wave Interdigital Transducers for ZnO/Diamond and　SiO2/ZnO/Diamond Structures”, H.Nakahata, A.Hachigo, S.Fujii and S.Shikata, Jpn.J.Appl.Phys., 41 (2002) pp.3489-3493
55)”Low Loss Diamond SAW Devices by Small Grain Size Poly-crystalline Diamond”, T.Uemura, S.Fujii,H.Kitabayashi, K.Itakura, A.Hachigo, H.Nakahata, and S.Shikata, IEEE Ultrason. Symp. Proc., 416~419 (2002)
2001
54)”Synthesis and Surface Acoustic Wave Property of Aluminum Nitride Thin Films Fabricated on Silicon and　Diamond Substrates Using the Sputtering Method”, M. Ishihara, T.Manabe, T.Kumagai, T. Nakamura, S. Fujiwara, Y. Ebata, S.Shikata, H. Nakahata,　A. Hachigo and Y. Koga, Jpn.J.Appl. Phys., 40, 5065, (2001)
53) “High frequency SAW Devices using SiO2/ZnO/Diamond”, S.Shikata, H.Nakahata, S.Fujii, A.Hachigo, H.Kitabayashi, K.Itakura, T.Uemura, H.Toyoda, and N.Fujimori, Int'l Symp. Acoustic Wave Devices for Future Mobile Comm. Systems, Proc., 227-230 (2001)
2000
52)”SAW Resonators of SiO2/ZnO/diamond Structure in GHz Range”,H.Nakahata, A.Hachigo, K.Itakura, S.Fujii and S.Shikata, IEEE Freq.Cont. Symp. Proc., 315~320 (2000)
51)”Fabrication of High Frequency SAW Filters from 5 to 10 GHz using SiO2/ZnO/Diamond Structure”Nakahata, A. Hachigo, K.Itakura, and S. Shikata, IEEE Ultrason. Symp. Proc., 349~352 (2000)
1999　
50) “Annealing behaviours of defects in electron-irradiated diamond probed by positron annihilation”, A.Uedono,K.Mori, N.Morishita, H.Itoh, S.Tanigawa, S.Fujii and S.Shikata, J.Physics, Condens.Matter,11 (1999) pp.4925-4930
49) “Defects in synthesized and natural diamond probed by positron annihilation”, A.Uedono, S.Fujii, H.Itoh, S.Tanigawa and S.Shikata, J.Physics,Condens.Matter, 11(1999) pp.4109-4114
48) “New Material Systems for Diamond Surface Acoustic Wave Devices”, S.Shikata, H.Nakahata and A.Hachigo, New Diamond and Frontier Carbon Technology, 9, 75~92 (1999)
1998　
47)”Study on Surface Acoustic Wave Characteristics of SiO2/IDT/ZnO/Diamond Structure and Fabrication of 2.5 GHz narrow band filter”, H. Nakahata, H.Kitabayashi, T.Uemura, A. Hachigo, K. Higaki, S.Fujii, Y. Seki, K. Yoshida and S. Shikata, Jpn.J.Appl. Phys., 37, , 2918~2922 (1998)
46)“The road to commercialization of Vapor Phase Grown Diamond," S. Shikata, MRS Bulletin, 23, p61 (1998)
45)”Diamond SAW filter for 2.488 Gbps retiming”, H. Nakahata, H.Kitabayashi, T.Uemura, A. Hachigo, K. Higaki, S.Fujii and S. Shikata, IEEE Ultrason.Symp. Proc., 319~322 (1998)
44) “Structures and Configurations of Diamond SAW Device and its Characteristics”, S.Shikata, Osaka Univ. Symposium　proc.,58-61 (1998)
1997
43）”High Power Durability of Diamond Surface Acoustic Wave Filter”, K. Higaki, H. Nakahata, H.Kitabayashi, S.Fujii, K. Tanabe, Y. Seki and S. Shikata, IEEE Ultrasonics, Ferroelectrics, and Frequency Control, 44, 1395 ~1400 (1997)
42) “Diamond wafers for SAW application”, S.Fujii, Y.Seki, K.Yoshida, H.Nakahata, K.Higaki, H.Kitabayashi and　Shikata, IEEE Ultrason. Symp. Proc., 183~186 (1997)
41)”High frequency SAW filter on diamond”, K. Higaki, H. Nakahata, H.Kitabayashi, S. Fujii, K. Tanabe, Y. Seki and S. Shikata, IEEE MTT-S Digest, 829~832 (1997)
40) “Diamond SAW Filter for Optical Fiber Communication Systems”, S. Shikata, H.Nakahata, K. Higaki, H. Kitabayashi, K. Tanabe, S. Fujii, and Y. Seki, Int'l Symp. Advanced Materials Proc., (1997)
1996　
39) “Fabrication of 2.5 GHz SAW retiming filter with SiO2/ZnO/diamondStructure”,H.Nakahata, S.Fujii, H.Kitabayashi, K.Higaki, K.Tanabe, Y.Seki and S.Shikata, IEEE Ultrason. Symp. Proc., pp.285~288, (1996)
1995　
38) “Pulse-doped Diamond P-Channel Metal Semiconductor Field-Effect Transistor”, H.Shiomi, Y.Nishibayashi, N.Toda, and S.Shikata, IEEE Electr. Device Lett., 16, 36 (1995)
37) ”SAW deivce application of diamond”, S.Shikata,Electronic Manufacturing Technology Symp., (1995)　pp.379-382
36) “Study of various types of diamonds by measurements of double crystal x-ray diffraction and positron annihilation”, S.Fujii, Y.Nishibayashi, S.Shikata, A.Uedono, and S.Tanigawa, J.Appl.Phys., 78,1510 (1995)
35) “Theoretical Study on SAW Characteristics of Layered Structures Including a Diamond　Layer”, H. Nakahata, A. Hachigo, K. Higaki, S.Fujii, A. Hachigo, S. Shikata, and N. Fujimori, IEEE Ultrasonics, Ferroelectrics, and Frequency Control, 42, pp.362~375 (1995)
34) “Characterization of diamond single crystals by means of double-crystal X-ray diffraction and positron annihilation”, S.Fujii, Y.Nishibayashi, S.Shikata, A.Uedono and S.Tanigawa, Appl. Phys.A 61, 331 (1995)
33) “SAW filters based on diamond”, S.Shikata, H.Nakahata, K.Higaki, S.Fujii, A.Hachigo, H.Kitabayashi, Y.Seki, K.Tanabe and N.Fujimori, 3rd Int'l Conf. Appl. of Diamond Films and Related Materials, Proc, pp.21~28 (1995)
32) “SAW Device on Diamond”, H.Nakahata, K.Higaki, S.Fujii, H.Kitabayashi, Y.Seki, K.Tanabe, and S.Shikata, IEEE Ultrason. Symp.pp.361~370 (1995)
1994
31) “Characterization of Single Crystal Diamond by Double-Crystal X-Ray Diffraction”, Y.Nishibayashi, T.Tomikawa, S.Shikata, and N.Fujimori, Trans. Mat.Res.Soc.Jpn., 14B, 1537 (1994)
30) “p-n Junction Diode by B-Doped Diamond heteroepitaxially grown on Si-doped c-BN”, T.Tomikawa,Y.Nishibayashi, and S.Shikata, Diamond and Related Materials,3,pp.1389-1392 (1994)
29) “Diamond (001) single-domain 2×1 surface grown by chemical vapor deposition”, T.Tsuno, T.Tomikawa, and S.Shikata, Appl.Phys.Lett., 64,572 (1994)
28) “Diamond homoepitaxial growth on (111) substrate investigated by scanning tunneling microscope”,　T.Tsuno, T.Tomikawa, and S.Shikata, J.Appl.Phys.75, 1526 (1994)
27) “Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering”, A.Hachigo,　H.Nakahata,　K.Higaki, S.Fujii, and S.Shikata, Appl.Phys.Lett., 65,pp. 2556~2558 (1994)
26) “High frequency surface acoustic wave filter using ZnO/diamond/Si structure”, H. Nakahata, K. Higaki, A.Hachigo, S. Shikata, N. Fujimori, Y.Takahashi, T.Kajiwara and Y. Yamamoto, Jpn.J.Appl. Phys.,33, pp.324~328, (1994)
25) “2.5GHz SAW bandpass filter using poly-crystalline diamond”, S. Shikata, H.Nakahata, K.Higaki, S.Fujii,A.Hachigo, and N.Fujimori, 4th Int'l Conf..New Diamond Science and Technol., Proc., pp.697~700 (1994)
24) “Fabrication of a Gate-Recessed-Structure MESFET on Diamond Films”, H.Shiomi, Y.Nishibayashi, N.Toda,S.Shikata and N.Fujimori, 4th Int'l Conf..New Diamond Science and Technology, Proc.,pp.669-672 (1994)
23) “Thermally Stable Ohmic Contact to Boron Doped Diamond Films”, Y.Nishibayashi, H.Shiomi, N.Toda, and S.Shikata, 4th Int'l Conf..New Diamond Science and Technology, Proc., pp.717-720 (1994)
22) “Surface structure and morphology of diamond epitaxial film”, T.Tsuno, T. Imai, S. Shikata and N.Fujimori,4th Int'l Conf..New Diamond Science and Technology, Proc. ,pp.249-252 (1994)
1993
21)”High-frequency bandpass filter using polycrystalline diamond”, S. Shikata, H.Nakahata, A.Hachigo, and N.Fujimori, Diamond and Related Materials, 2, 1197~1202 (1993)
20) “Cross-Sectional Transmission Electron Microscopy Observation and Selected-Area Electron Diffraction of Interfaces of Epitaxially Grown Diamond Thin Films on Cubic Boron Nitride Substrates” T.Tomikawa and S.Shikata, Jpn.J.Appl.Phys., 32, 3938 (1993)
19) “1.5GHz SAW bandpass filter using poly-crystalline diamond”, S.Shikata, H.Nakahata, K.Higaki, A.Hachigo and N.Fujimori, IEEE Ultrasonics Symp., Proc., 277~280, (1993)
18)”STM observation of diamond　(111) homoepitaxial films”, T.Tsuno, T.Tomikawa and S.Shikata, Trans.Mat.Res.Soc.Jpn., (1993) 1471-1474
17) “Microfabrication Technique for Diamond Devices”, S.Shikata, Y.Nishibayashi, T.Tomikawa, N.Toda, and N.Fujimori, 2nd Int'l Conf. Appl. of Diamond Films and Related Materials, Proc., 377-380 (1993)
16) “High-Frequency Surface Acoustic Wave Filter Using ZnO/Diamond/Si Structure”, H.Nakahata, K.Higaki,A.Hachigo, S. Shikata, N.Fujimori, Y.Takahashi, R.Kajihara, N.Sakairi and Y. Yamamoto, 2nd Int`l Conf.on the Application of Diamond Films and Related Materials, Proc., p.361-364 (1993)
1992　
15) “High Frequency Surface Acoustic Wave Filter Using ZnO/Diamond Structure”, H.Nakahata, A..Hachigo, S.Shikata and N.Fujimori, IEEE Ultrason.Symp. Proc., 377~380 (1992)
14)“The study of Se and Si implanted GaAs by slow positron”, S.Fujii, S.Shikata, L.Wei, and S.Tanigawa, Mat.Sci.For.,2105-110 (1992) pp.1387
13) “Characterization of vacancy-type defects in Se-implanted GaAs by means of a slow positron beam”, S.Fujii, S.Shikata, L.Wei, and S.Tanigawa, J.Appl.Phys. 72, 1405 (1992)
12) “The study of Ion Implanted GaAs by slow positron beam”, S.Fujii, S.Shikata, L.Wei, and S.Tanigawa, GaAs and Related Materials, proc.,pp.241-244 (1992)
11) “Effect of Annealing Method on Vacancy-Type Defects in Si-implanted GaAs Studied by a Slow Positron Beam”, S.Shikata, S.Fujii, L.Wei and S.Tanigawa, Jpn.J.Appl.Phys., 31, 732~736 (1992)
1991
10)“Thermally stable Pd/Ge ohmic contacts to n‐type GaAs”, J. Tsuchimoto, S.Shikata, and H. Hayashi, J.Appl. Phys., 69, 6556 (1991)
9) “Suppression of emitter size effect on the current gain of AlGaAs/GaAs heterojunction bipolar transistor by utilizing (NH4)2Sx treatment”, S.Shikata, H.Okada, and H.Hayashi, J. App. Phys., 69,pp.2717~2719 (1991)
8) “Photoluminescence studies on over-passivations of (NH4)2Sx treated GaAs”, S.Shikata and H. Hayashi, J.Appl.Phys. 70, 3721~3725 (1991)
7) “Over-passivation of sulfur treated AlGaAs/GaAs hetero junction bipolar transistors”, S.Shikata, H.Okada, and H.Hayashi, J. Vac. Sci. Technol. B 9, 2479~2482 (1991)
6) “Electrical Characteristics and Reliability of Pt/Ti/Pt/Au Ohmic Contacts to p-Type GaAs”, H.Okada, S.Shikata and H.Hayashi, Jpn. J. Appl. Phys. 30 (1991) L558-L566
1990
5) “A Novel Self-Aligned Gate Process for Half-Micrometer Gate GaAs IC's Using ECR-CVD”, S.Shikata, J.Tsuchimoto and H.Hayashi, IEEE Trans. Electron Devices, 37. 1800~1803 (1990)
4) “A Novel Self-Aligned Gate Process for GaAs LSI using ECR-CVD”, S.Shikata, S.Sawada, J.Tsuchimoto, and H.Hayashi, GaAs IC Symp., Proc., 257-260 (1990)
3) “Suppression of emitter size effect on the current gain of AlGaAs/GaAs HBT by utilizing (NH4)2Sx treatment”, S.Shikata, H.Okada, and H.Hayashi, 17th Int'l Symp. GaAs and Related Compounds, Proc., 251-254 (1990)
1987
2) “A Novel Self-Aligned Process using ECR-CVD”, S.Shikata, H.Hayashi, H.Takahashi and K.Yoshida, SPIE Advanced Processing of Semiconductor Devices, Proc., 126-129 (1987)
1984
1) “The Effects of Material Constants and Device Parameters on Electro-optic Characteristics of Liquid Crystal Devices”, S.Shikata, M.Isogai, K.Iwasaki, and A.Mukoh, Molecular Crystals and Liquid Crystals, 108, 339~348 (1984)

国際学会　招待講演・プレナリー講演
25)” Single crystal diamond wafer for high power electronics”, S.Shikata,International Conference on Diamond and Carbon Materials, Bad Homburg, Germany, Sept.6-10(2015) Invited talk
24) “Diamond Wafer Prospect for the Power Device Application”, S.Shikata, H.Umezawa, Y.Kato, S.Ohmagari, H.Yamada, N.Tsubouchi, Y.Mokuno, and A.Chayahara, 6th International Workshop on Crystal Growth Technology, Berlin, Germany, June (2014) Invited talk
23) “Diamond based power devices”, S.Shikata,H.Umezawa,Y.Kato, S.Ohmagari, H.Yamada, N.Tsubouchi, Y.Mokuno and A.Chayahara, New Diamond and Nano Carbons 2014, Chicago, USA, May (2014) Invited talk
22) “Diamond based power devices”, S.Shikata,H.Umezawa,Y.Kato, H.Yamada, N.Tsubouchi, Y.Mokuno and A.Chayahara, Int.Conf.SiC and Related Materials, Miyazaki, Japan, Oct.(2013) Invited talk
21) “Road to next generation diamond power switching device”, S.Shikata, H.Umezawa,Y.Kato, H.Watanabe, H.Yamada, N.Tsubouchi, Y.Mokuno and A.Chayahara, 63^rd Diamond Conf., Birmingham July (2012)Plenary talk
20) “Progress in technologies of fabrication of single-crystal diamond wafers with inch-size area”, H.Yamada, A.Chayahara, Y.Mokuno, N.Tsubouchi and S.Shikata, Solid State Device Meeting, Kyoto, Sept. (2012)Invited talk
19) “New opportunities for diamond based frequency control devices”, S.Shikata, H.Umezawa, S.Fujii, T.Odawara, H.Yamada, T.Omori, and K.Hashimoto, New Diamond and Nano Carbons2012, San Juan May (2012) Plenary talk
18) “Single crystal diamond thin plate and its thermal conductivity”, S.Shikata, A.Chayahara, N.Yamada and T.Yagi 15th Int'l Conf.Thin Films，Kyoto, Nov.(2011)
17) “Single NV centers in isotopically controlled diamond films”, K.Ito, T.Ishikawa, K.M.Fu, C.Santori, P.E. Barclay,R.G.Beausoleil,R.Hirano,M.Tajima, H.Watanabe and S.Shikata 22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides (DIAMOND2011),Gamisch-Partenkirchen, (2011)
16) “Latest progresses in R&D for synthesis of large single-crystal diamond wafers by using MWPCVD”, H.Yamada, A.CHayahara, Y.Mokuno, N.Tsubouchi, H.Umezawa and S.Shikata, 8th International Workshop Strong Microwave and Terahertz Waves: Sources and Applications,Nizhny Novgorod, July (2011)
15) “Diamond Related Technologies for the Mitigation of Climate Change”, S.Shikata, New Diamond and Nano Carbons2010, Suzhou,May (2010) Plenary talk
14) “Developments of elemental technologies to produce inch-size single crystal diamond wafers”, H.Yamada, A.Chayahara, Y.Mokuno, N.Tsubouchi, S.Shikata and N.Fujimori, New Diamond and Nano Carbons2010, Suzhou,May (2010)Invited
13) “The distribution control of radicals by discharge conditions of microwave plasma to synthesize diamond crystals”, H.Yamada, A.Chayahara, Y.Mokuno and S.Shikata, New Diamond and Nano Carbons2009, Traverse City,May (2010)Invited
12) “A description of of reactive microwave-plasma-CVD of single-crystal-diamond”, H.Yamada, A.Chayahara, Y.Mokuno and S.Shikata, ISPlasma2010,Nagoya,March (2010)Invited
11) “Recent progress of diamond toward power switching devices” S.Shikata and H.Umezawa, 20th　European Conf.Diamond, Diamond like carbons, Carbon Nanotubes，Athene, Sept. (2009)Invited
9) “Simulation of microwave plasma CVD for synthesis of large-size diamond crystals”, H.Yamada, A.Chayahara, Y.Mokuno and S.Shikata, 7th Symposium on Plasma Processing，Liblice, April (2009)
8) “Schottky device of diamond”, H.Umezawa, R.Kumaresan, K.Ikeda N.Tatsumi and S.Shikata, NIMS Conference , Tsukuba July (2008)
7) “Application of Diamond to electronics”, S.Shikata, 9th Int'l Conf. Diamond Electrochemistry, Tokyo, March (2007) Invited
6) “Key Issues on Electronic Application of Diamond”, N.Fujimori and S.Shikata, Applied Diamond Conference，Chicago, May(2005) Plenary talk
5) "High Frequency SAW Resonators by SiO2/ZnO/Diamond and It's Application to Low Phase Noise VCSO," S.Shikata, H.Nakahata, S.Fujii, T.Uemura, Y.Takada, T.Kano, N.Itoh, and O.Iwamoto, Int'l Symp. Acoustic Wave Devices for Future Mobile Comm. Systems, Chiba, March (2004)Invited
4) ”Diamond SAW Device, Narrow Band and Wide Band”, S.Shikata, H.Nakahata, S.Fujii,　A.Hachigo, H.Kitabayashi, K.Itakura, and T.Uemura, 9th Int'l Conference for New Diamond Science and Technology , Tokyo, March (2004)Invited
3)”High frequency SAW Devices using SiO2/ZnO/Diamond”, S.Shikata, H.Nakahata, S.Fujii, A.Hachigo, H.Kitabayashi, K.Itakura, T.Uemura, H.Toyoda, and N.Fujimori, Int'l Symp. Acoustic Wave Devices for Future Mobile Comm. Systems, Chiba, March (2001)Invited
2)“1.5GHz SAW bandpass filter using poly-crystalline diamond”, S.Shikata, H.Nakahata, K.Higaki, A.Hachigo,and N.Fujimori, IEEE Ultrasonics Symp., Orlando, Oct.(1993)Invited
1) “A Novel Self-Aligned Gate Process for GaAs LSI using ECR-CVD”, S.Shikata, S.Sawada, J.Tsuchimoto, and H.Hayashi, GaAs IC Symp., New Orleans Oct.(1990)Invited

解説等
“Large-area high-quality single crystal diamond”, M.Schreck , J.Asmussen , S.Shikata , J-C. Arnault ,and N. Fujimori, MRS Bulletin 39,(2014)pp.504-510
“Effect of an Ultraflat Substrate on the Epitaxial Growth of Chemical-Vapor-Deposited Diamond”，Y.Kato,H.Umezawa and S.Shikata Photon Factory Activity Report 2012　Part A(Highlights) 30(2014)pp.66-67
“ダイヤモンドパワー半導体へ向けた開発状況”、鹿田真一、応用物理、82（2013）pp.299-302
“ダイヤモンド薄膜を用いたサステナブル圧電デバイス”、鹿田真一、超音波、23（2011）pp.56-58
”ダイヤモンドを用いた次世代パワーデバイスの開発“、鹿田真一、表面技術、62（2011）pp.170-174
“ダイヤモンドウェハおよびパワーデバイスの開発動向”、鹿田真一、電子材料、49（2010）pp.19-24
”半導体ダイヤモンドデバイスの研究動向“、鹿田真一、Semiconductor FPR World、28(2009) pp.57-59
“高温動作パワーデバイス用ダイヤモンドデバイス”、鹿田真一、オーム社96（2009）pp.8-9
“ダイヤモンドの特性を活用したデバイスの開発” 鹿田真一、化学、62,36（2007）
“ニューダイヤモンドの電気的応用” 鹿田真一、New Diamond vol.22, (2006)
“ダイヤモンドの工業応用”、鹿田真一、岩石と鉱物、vol.33, p106 (2004)
“ダイヤモンドＳＡＷデバイス”、鹿田真一、中幡英章、応用物理　vol.71,No.3,p327(2002)
“ダイヤモンドＳＡＷデバイス（１）” 鹿田真一、NEW DIAMOND、15,No.2,p28 (1999)
“ダイヤモンドＳＡＷデバイス（２）”鹿田真一、NEW DIAMOND、15,No.3,p19 (1999)
“The road to commercialization of Vapor Phase Grown Diamond," S.Shikata, MRS Bulletin, 23, p61 (1998)
“ダイヤモンドＳＡＷフィルタ”, 鹿田真一、電子情報通信学会誌,、81, p240 (1998)
“ダイヤモンドの高周波ＳＡＷフィルタへの応用” セラミックス、33 ,p458 (1998)
“狭帯域ダイヤモンドＳＡＷフィルタと超高速光リンクへの適用”、鹿田真一、New Diamond、14, p22 (1998)
“ダイヤモンドのエレクトロニクスへの応用における最近の進歩”、鹿田真一、真空、vol.37, 387（1997）
“SAWフィルタの最新動向、ダイヤモンド基板による高周波化”、鹿田真一、エレクトロニクス　8（1997）

特許
日本国　登録特許　
８５）「半導体−金属複合材料及びその製造方法」大曲, 梅沢, 山田, 茶谷原, 鹿田6466197　　2019/01/18８４）「ダイヤモンドNV光学中心を有するダイヤモンド単結晶」渡邊、鹿田、梅澤、石川、伊藤、富澤、大橋、早瀬　　6037387　2016/11/11
８３）「３層構造積層ダイヤモンド系基板、パワー半導体モジュール用放熱実装基板およびそれらの製造方法」鹿田、梅澤、関　5979478　2016/08/05
８２）「半導体ダイヤモンドデバイス用オーミック電極」、山田、ソム、鹿田　5747239　2015/5/22
８１）「ダイヤモンド電子素子」、辰己、池田、西林、今井、梅澤、鹿田　5521132　2014/4/18）

８０）「電界電子放出素子及びその製造方法」、中島、山田、高橋、奥村、鹿田、谷本　5540331　2014/5/16
７９）「ダイヤモンド電子素子及びその製造方法」梅澤、加藤、永瀬、鹿田　5540296　2014/5/16
７８）「ダイヤモンド電子素子及びその製造方法」梅澤、加藤、永瀬、鹿田　5532248　2014/5/9
７７）「ダイヤモンド表面と金属片との接合保護構造」池田、梅澤、鹿田　5522648、2014/04/18
７６）「半導体ダイヤモンドデバイス用オーミック電極」山田、ソム、鹿田　5488602　2014/3/7
７５）「オフ角を有する単結晶基板の製造方法」杢野、茶谷原、山田、鹿田　5382742　2013/1011
７４）「ダイヤモンド半導体素子におけるショットキー電極及びその製造方法」池田、梅澤、鹿田5344484　2013/8/23
７３）「ダイヤモンド半導体デバイス及びその製造方法」梅澤、鹿田、池田　5344464　2013/8/23
７２）「バリアハイト制御をしたダイヤモンド電子デバイス」池田、梅澤、鹿田　5414019 2008/04/01
７１）「同位体ダイヤモンド積層体」渡邊、ネーベル、鹿田　5263893　2013/5/10
７０）「ダイヤモンド基板の表面処理方法」山田、鹿田、ソム　5234541　　2013/4/5
６９）「ダイヤモンド表面の微細加工方法」上塚、山田、鹿田　5219116　　2013/3/15
６８）「高出力ダイヤモンド半導体素子」池田、梅澤、鹿田　 5099486 2012/10/05
６７）「マイクロ波プラズマ処理装置」山田、茶谷原、杢野、鹿田　5071927 2012/08/31
６６）「高出力ダイヤモンド半導体素子」池田、梅澤、鹿田、クマレサン、辰巳　 5051835 2012/08/03
６５）「コーティング基板の製造方法、前記方法により製造されるコーティング基板」雨宮、中山、嶋本、上塚、山田、ネーベル、鹿田　　4904559 2012/01/20
６４）「オフ角を有する単結晶基板の製造方法」杢野、茶谷原、山田、鹿田　4873467 2011/12/02
６３）「不純物傾斜型ダイヤモンド薄膜及びその製造方法並びに該不純物傾斜型ダイヤモンド薄膜を用いたダイオード又はトランジスタ」李、山崎、大串、鹿田　4858948 2011/11/11
６２）「p型表面伝導性酸素終端（１１１）ダイヤモンドの製造方法及び高周波・高出力デバイス」李、山崎、大串、鹿田4845086 2011/10/21
６１）「単結晶ダイヤモンドの表面損傷の除去方法」杢野、茶谷原、鹿田4803464 2011/08/19
６０）「細胞内及び細胞間の微小空間計測用カンチレバーシステム」青木、鹿田、上塚、中村、嶋本　4798454 2011/08/12
５９）「リン原子がドープされたｎ型（１００）面方位ダイヤモンド半導体単結晶膜及びその製造方法」加藤、山崎、大串、鹿田 4784915 2011/07/22
５８）「ダイヤモンド素子及びその製造方法」梅澤、齊藤、朴、鹿田 4734668 2011/05/13
５７）「ダイヤモンド素子及びその製造方法」齊藤、梅澤、朴、鹿田 4734667 2011/05/13
５６）「ダイヤモンド製造方法」山田、茶谷原、杢野、堀野、鹿田 4729741 2011/04/28
５５）「ダイヤモンド構造体のエッチング方法及びそれを用いたパワー半導体デバイス若しくは電子放出源の製造方法」山田,鹿田、 4543216 2010/7/9
５４）「炭素終端構造のダイヤモンド電子源及びその製造方法」山田、Nebel、鹿田　4340776 2009/7/17
５３）「電子放出電圧を著しく低減した電子源及びその製造方法」山田、鹿田4103961 2008/4/4
５２）「表面弾性波素子」, 板倉、八郷、中幡、藤井、鹿田,　03365506　 2001/03/21
５１）「表面弾性波素子」, 板倉、八郷、中幡、藤井、鹿田,　 03365505　 2001/03/21
５０）「表面弾性波素子」, 八郷、板倉、中幡、藤井、鹿田,　 03341759　 2000/08/25
４９）「硬質炭素膜および表面弾性波素子用基板」, 藤井、上村、石橋、関、中幡、鹿田,　03189833　 1999/09/07
４８）「ダイヤモンドウェハのチップ化方法」, 中幡、桧垣、藤井、北林、鹿田, 03319507　 1998/06/29
４７）「表面弾性波素子及び製造方法」, 中幡、上村、桧垣、藤井、北林、鹿田, 03275297　 1997/11/07
４６）「ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ」, 藤井、関、吉田、中幡、桧垣、北林、鹿田, 03168961　 1997/10/06
４５）「表面弾性波素子」, 中幡、成田、桧垣、藤井、北林、鹿田, 03177946　 1996/02/09
４４）「表面弾性波素子」, 北林、中幡、桧垣、藤井、鹿田, 03205981　 1995/09/29
４３）「表面弾性波素子」, 中幡、桧垣、藤井、北林、鹿田, 03205978　 1995/08/08
４２）「ダイヤモンドウエハとその製造方法」, 田辺、関、池谷、藤森、中幡、鹿田, 03296134　 1995/03/31
４１）「微小機械部品及びその製造方法」, 塩見、西林、鹿田, 03391141　 1995/03/24
４０）「表面弾性波素子」, 中幡、桧垣、藤井、北林、鹿田, 03204290　 1995/02/09
３９）「ダイヤモンド基材および表面弾性波素子」, 桧垣、中幡、藤井、北林、鹿田, 03374557　 1994/11/29
３８）「電界効果トランジスタ」, 塩見、西林、鹿田,　 03436278　 1994/09/16
３７）「表面弾性波素子」, 中幡、八郷、桧垣、藤井、鹿田, 03318920　 1994/09/02
３６）「表面弾性波素子」, 中幡、八郷、桧垣、藤井、鹿田, 03344441　 1994/03/25
３５）「表面弾性波素子」, 中幡、桧垣、八郷、藤井、鹿田,03282645　 1994/09/02
３４）「配向性材料および表面弾性波素子」, 八郷、中幡、桧垣、藤井、鹿田, 03344442　 1994/05/27
３３）「表面弾性波素子用ダイヤモンド基材及び素子」, 鹿田、中幡、藤井、八郷、桧垣,　03295921　 1994/06/20
３２）「表面弾性波素子」, 中幡、八郷、桧垣、藤井、鹿田,特 03344441　 1994/03/25
３１）「半導体素子」, 西林、塩見、鹿田, 03309887　 1994/08/17
３０）「表面弾性波素子」, 中幡、八郷、桧垣、鹿田,03205976　 1993/09/07
２９）「半導体素子」, 西林、富川、鹿田, 03269510　 1993/08/31
２８）「オーミック電極の形成方法」, 戸田、西林、富川、鹿田, 03304541　 1993/09/08
２７）「ｎ型半導体立方晶窒化ホウ素のオーミック電極およびその形成方法」, 西林、富川、鹿田,　02942452　 1993/10/21
２６）「電子デバイス」, 西林、富川、鹿田, 03269065　 1993/01/29
２５）「半導体ダイヤモンド及びその形成方法」, 西林、富川、鹿田, 03374866　 1993/08/30
２４）「窒化ホウ素のエッチング方法」, 富川、鹿田、築野, 03017898　 1993/02/12
２３）「表面弾性波素子」, 桧垣、中幡、八郷、鹿田, 03163606　 1993/01/29
２２）「ダイヤモンドのエッチング方法」, 西林、富川、鹿田、藤森, 03104433　 1992/10/16
２１）「半導体装置の製造方法」, 西林、富川、鹿田, 02931727　 1992/10/29
２０）「表面弾性波素子および表面弾性波素子の製造方法」, 鹿田、中幡、八郷、桧垣,　03252865　 1992/09/11
１９）「表面弾性波素子」, 中幡、八郷、桧垣、鹿田, 03248258　 1992/09/02
１８）「ダイアモンドのエッチング方法」, 富川、鹿田, 02997135　 1992/07/31
１７）「半導体装置」, 鹿田, 03339508　 1992/03/24
１６）「超音波振動子」, 中幡、鹿田, 02990926　 1992/03/16
１５）「表面弾性波素子及びその製造方法」, 中幡、八郷、鹿田、藤森, 03225495　 1992/02/21
１４）「表面弾性波素子」, 中幡、鹿田、八郷、藤森,特 03170819　 1991/09/24
１３）「表面弾性波素子の製造方法」, 八郷、中幡、鹿田、藤森, 03132515　 1991/09/26
１２）「表面弾性波素子」, 中幡、鹿田、八郷、藤森,特 03109060　 1991/09/26
１１）「弾性表面波素子及びその製造方法」, 八郷、中幡、鹿田、藤森, 03132078　1991/09/19
１０）「ＭＥＳ構造電極の形成方法」, 鹿田, 02830414　1990/08/01
９）「電界半導体レーザの保護膜形成方法」, 鹿田, 02841775　1990/08/01
８）「電界効果トランジスタの製造方法」, 鹿田, 02685149　1988/04/11
７）「ゲ−ト電極の形成方法」, 鹿田, 02657950　1988/04/06
６）「ゲ−ト電極形成方法」, 鹿田, 02652657　1988/04/06
５）「電界効果トランジスタの製造方法」, 鹿田, 02544767　1988/02/08
４）「超電導薄膜の作製方法」, 鹿田, 02668532　1987/08/18
３）「電界効果トランジスタの製造方法」, 鹿田, 02055848　1986/12/01
２）「結晶へのイオン注入方法」, 鹿田, 02124260　1985/06/20
１）「結晶へのイオン注入方法」, 鹿田,菊池　 01794034　1985/06/18
米国　登録特許
65) Large diamond crystal substrates and methods for producing the same 8,940,266　H.Yamada, A.Chayahara, Y.Mokuno and S.Shikata Jan.27, 2015
64) Film of N type (100)oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same 8,876,973 H.Kato, S.Yamasaki, H.Okushi, S.Shikata, Nov.4,2014
63) Ohmic electrode for use in a semiconductor diamond device 8,735,907 T Yamada, Kumaragurubaran, S.Shikata, May27, 2014
62)Schottky Diamond Semiconductor Device and Manufacturing Method for a Schottky Electrode for Diamond Semiconductor Device 8,237,170 K.Ikeda, H.Umezawa,S.Shikata, Aug.7, 2012
61)Diamond Electron Source Having Carbon-Terminated Structure 7960905 2011/06/14 T.Yamada, C.Nebel and S.Shikata
60)Surface acoustic wave device utilizing a ZnO layer and a diamond layer 6,642,813 Itakura, Hachigo, Fujii, Nakahata, Shikata November 4, 2003
59)Surface acoustic wave device 6,469,416 Itakura, Hachigo, Nakahata, Fujii, Shikata October 22, 2002
58)Hard carbon film and surface-acoustic-wave substrate 6,448,688 Fujii, Uemura, Seki, Nakahata, Shikata September 10, 2002
57)Hard carbon film and surface acoustic-wave substrate 6,416,865 Fujii, Uemura, Seki, Nakahata, Shikata July 9, 2002
56)Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 6,356,006 Fujii, Seki, Yoshida, Nakahata, Higaki, Kitabayashi, Uemura, Shikata March 12, 2002
55)Surface-acoustic-wave device 6,337,531 Nakahata, Narita, Hachigo, Shikata January 8, 2002
54)Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 6,320,296 Fujii, Seki, Yoshida, Nakahata, Higaki, Kitabayashi, Uemura, Shikata November 20, 2001
53)Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wavedevice 6,210,780 Fujii, Seki, Yoshida, Nakahata, Higaki, Kitabayashi, Uemura, Shikata April 3, 2001
52)Diamond wafer and method of producing a diamond wafer 6,051,063 Tanabe, Seki, Ikegaya, Fujimori, Nakahata, Shikata April 18, 2000
51)Surface acoustic wave device incorporating single crystal LiNbO3 substrate 6,025,636 Nakahata, Narita, Higaki, Fujii, Kitabayashi, Shikata February 15, 2000
50)Method of forming diamond heat sink comprising synthetic diamond film 5,976,909 Shiomi, Nakahata, Nishibayashi, Shikata November 2, 1999
49)Diamond-ZnO surface acoustic wave device 5,959,389 Nakahata, Uemura, Higaki, Fujii, Kitabayashi, Shikata September 28, 1999
48)Micro mechanical component and production process thereof 5,943,555 Shiomi, Nishibayashi, Shikata August 24, 1999
47)Field effect transistor using diamond 5,903,015 Shiomi, Nishibayashi, Shikata May 11, 1999
46)Surface acoustic wave device and diamond base material for the same 5,891,557 Shikata, Nakahata, Higaki, Fujii, Hachigo April 6, 1999
45)Surface acoustic wave device and diamond base material for the same 5,891,519 Shikata, Nakahata, Higaki, Fujii, Hachigo April 6, 1999
44)Surface acoustic wave device 5,888,646 Takahashi, Yamamoto, Sakairi, Shikata, Nakahata, Higaki, Fujii, Kitabayashi March 30, 1999
43)Diamond heat sink including microchannel therein and methods for manufacturing diamond heat sinks 5,874,775　Shiomi, Nakahata, Nishibayashi, Shikata February 23, 1999
42)Field emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamond 5,844,252 Shiomi, Nishibayashi, Tomikawa, Shikata December 1, 1998
41)Surface acoustic wave device 5,838,090 Nakahata, Higaki, Fujii, Kitabayashi, Shikata November 17, 1998
40)Diamond-ZnO surface acoustic wave device 5,814,918 Nakahata, Higaki, Fujii, Kitabayashi, Shikata September 29, 1998
39)Semiconductor lasers comprising rare earth metal-doped diamond 5,812,573 Shiomi, Nishibayashi, Shikata September 22, 1998
38)Diamond-Zn0 surface acoustic wave device 5,783,896 Nakahata, Higaki, Fujii, Kitabayashi, Shikata July 21, 1998
37)Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer 5,777,422 Kitabayashi,Nakahata, Higaki, Fujii, Shikata July 7, 1998
36)Diamond wafer and method of producing a diamond wafer 5,776,246 Tanabe, Seki, Ikegaya, Fujimori, Nakahata, Shikata July 7, 1998
35)Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature 5,757,032 Nishibayashi, Shiomi, Shikata May 26, 1998
34)Surface acoustic wave device and diamond base material for the same 5,750,243 Shikata, Nakahata, Higaki, Fujii, Hachigo May 12, 1998
33)Micro mechanical component and production process thereof 5,729,074 Shiomi, Nishibayashi, Shikata March 17, 1998
32)Semiconductor device consisting of a semiconductor material having a deep impurity level 5,670,796 Nishibayashi, Shikata, Fujimori, Kobayashi September 23, 1997
31)Ohmic electrode and method for forming it Toda, Nishibayashi, Tomikawa, Shikata September 16, 1997
30)Diamond heat sink comprising synthetic diamond film 5,663,595 Shiomi, Nakahata, Nishibayashi, Shikata September 2, 1997
29)Diamond-LiTaO.sub.3 surface acoustic wave device 5,646,468 Nakahata, Higaki, Fujii, Hachigo, Shikata July 8, 1997
28)Method for forming heterojunction bipolar transistors 5,624,853 Shikata April 29, 1997
27)Diamond semiconductor device with P-I-N type multilayer structure 5,600,156 Nishibayashi, Tomikawa, Shikata February 4, 1997
26)Surface acoustic wave device 5,565,725 Nakahata, Higaki, Fujii, Hachigo, Shikata October 15, 1996
25)Orientational material, orientational substrate and surface acoustic wave device 5,565,724 Hachigo, Nakahata, Higaki, Fujii, Shikata October 15, 1996
24)Electron device 5,552,613 Nishibayashi, Tomikawa, Shikata September 3, 1996
23)Heterojunction bipolar transistor 5,536,952 Shikata July 16, 1996
22)Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same 5,527,735 Tomikawa, Nishibayashi, Shikata June 18, 1996
21)Polycrystalline diamond substrate and process for producing the same 5,501,909 Higaki, Nakahata, Hachigo, Shikata March 26, 1996
20)Method of polishing/flattening diamond 5,500,077 Nishibayashi, Shikata March 19, 1996
19)Method of manufacturing a surface acoustic wave element 5,497,726 Shikata, Hachigo, Nakahata, Higaki March 12, 1996
18)Stacked piezoelectric surface acoustic wave device with a boron nitride layer in the stack 5,463,901 Hachigo, Nakahata, Shikata, Fujimori November 7, 1995
17)Surface acoustic wave element 5,446,329 Nakahata,Hachigo, , Shikata August 29, 1995
16)Surface acoustic wave device and method of manufacturing the same 5,426,340 Higaki, Nakahata, Hachigo, Shikata June 20, 1995
15)Method for manufacturing a surface acoustic wave device 5,401,544 Nakahata, Shikata, Hachigo, Fujimori March 28, 1995
14)MIS electrode forming process 5,393,680 Shikata February 28, 1995
13)Method for producing a surface acoustic wave device 5,390,401 Shikata, Nakahata, Hachigo, Fujimori February 21, 1995
12)Semiconductor device including semiconductor diamond 5,382,809 Nishibayashi, Tomikawa, Shikata January 17, 1995
11)Method for etching diamond 5,344,526 Nishibayashi, Shikata September 6, 1994
10)Surface acoustic wave element and method of manufacturing the same 5,343,107 Shikata, Hachigo, Nakahata, Higaki August 30, 1994
9)Method of manufacturing a surface acoustic wave device 5,320,865 Nakahata, Hachigo, Shikata, Fujimori June 14, 1994
8)Surface acoustic wave device 5,294,858 Nakahata, Hachigo, Shikata, Fujimori March 15, 1994
7)Method of making a hetero-junction bipolar transistor 5,264,379 Shikata November 23, 1993
6)Process for preparing a superconducting thin film of compound oxide 5,235,398 Nakanishi, Shikata, Itozaki May 20, 1992
5)Surface acoustic wave device 5,235,236 Nakahata, Shikata, Hachigo, Fujimori August 28, 1992
4)Method for forming an oxide superconducting film having different crystal orientation on different regions of a Si substrate 5,225,398 　Nakanishi, Shikata, Itozaki March 26, 1992
3)Method for manufacturing a field effect transistor using spacers of different thicknesses 4,962,054 Shikata March 27, 1989
2)Method of producing the gate electrode of a field effect transistor 4,859,618 Shikata, Hayashi November 19, 1987
1)Method of annealing a compound semiconductor substrate 4,772,489 Shikata September 19, 1986
EC登録特許
USとほぼ同様の登録状況。
調査報告書
3) 経済産業省委託（社）ニューダイヤモンドフォーラム技術調査報告書，（分担執筆）（2006）
2)　経済産業省委託　製造産業技術等対策調査　（ファインセラミックス及びダイヤモンド技術俯瞰図）調査報告書（分担執筆）　１０章１　（2008）
1) NEDO委託「ダイヤモンド系材料の技術開発と省エネ効果に関する調査」報告書、（代表者　及び　執筆）　（2009）

受賞等
9)2015年度日本トライボロジー学会TROL論文賞 “Friction modification by shifting of phonon energy dissipation in solid atoms”, A.Kajita, M.Tohyama, H.Washizu,T.Ohmori,H.Watanabe and S.Shikata,Tribology,10 (2015)pp.156-161
8)第28回ダイヤモンドシンポジウム　優秀講演賞「フィラメントCVD法によるダイヤモンド大面積ホモエピ成長」大曲新矢、山田英明、茶谷原昭義、鹿田真一
7)The 8th International Workshop “Strong Microwaves and Terahertz Waves: Sources and Applications”"DIPLOMA" for outstanding presentation (2012)"Recent progress in R&D for the synthesis of large single-crystal diamond wafers by using MWPCVD" Yamada, A. Chayahara, Y. Mokuno, N. Tsubouchi, H. Umezawa, and S.Shikata
6)5h International Conference on New Diamond and Nano Carbons (NDNC2011). Best Poster Award (2011)"Structure and Electric Property Analysis of Dislocations in Single Crystal Diamond (001)"Kato, H. Umezawa, H. Yamaguchi, T. Teraji and S. Shikata
5)4th International Conference on New Diamond and Nano Carbons (NDNC2010) Best Poster Awards (2010)"A method to fabricate single crystal diamond wafers with 1-inch size",Yamada, A.Chayahara, Y. Mokuno, N. Tsubouchi, S. Shikata, and N. Fujimori
4)4th International Conference on New Diamond and Nano Carbons (NDNC2010) Poster Awards (2010)"Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence",H.Umezawa, A.Omer and S.Shikata
3)第21回ダイヤモンドシンポジウム　ポスター賞　“ダイヤモンドショットキーダイオードにおける耐圧構造”、池田、梅澤、辰巳、鹿田（2007）
2)住友電気工業㈱研究開発部門　優秀賞光通信用ダイヤモンドＳＡＷデバイスの開発　（1997）鹿田真一、中幡英章、藤井知、桧垣賢一郎他3名
1)Real Innovation Award　　米　材料学会（1996）受賞論文" High-frequency bandpass filter using poly crystalline diamond",S.Shikata, H.Nakahata, A.Hachigo, and N.Fujimori, Diamond and Related Materials, 2, 1197~1202 (1993)
外部資金プロジェクト等（産総研入所後以降のみ　2005～）
進行中
科学研究費補助金　（B)　（2019-2022）（代表）
　ダイヤモンド欠陥の同定と低減に関する研究
総務省SCOPE　（2019）
　高周波用薄膜ダイヤモンド弾性表面波デバイスの開発　（代表）
完了
キャノン財団　研究助成（2013～2014）ダイヤモンドによる単一プロトン核スピン磁気共鳴センシング　（分担者）
ＮＥＤＯ　省エネルギー革新技術開発事業　挑戦研究　（2009-2011）冷却フリー　ダイヤモンド省エネパワーデバイス　　（研究PJ代表者）
科学研究費補助金　PJ　　（2008-2012）トライボプラズマ応用技術　　　（分担者）
経済産業省　地域イノベーションPJ　（2008～2009）Ｆ2発生用ダイヤモンド電極　（分担者）
経済産業省　地域コンソーシアムPJ　（2007～2008）Ｆ2発生用ダイヤモンド電極　（分担者）
科学研究費補助金　PJ　　（2006-2009）高品質ダイヤモンド薄膜の評価技術　　（分担者）
NEDOナノテク・先端部材実用化研究開発　（2006～2008）ダイヤモンド電子源　（分担者）
ＳＩＰ（戦略的イノベーション創造プログラム）／次世代パワーエレクトロニクス（2014-2015）ダイヤモンドパワーデバイス用ウェハの研究開発（研究開発責任者）
科学研究費補助金　（A）（2013-2016）低欠陥ダイヤモンドウェハ（研究代表者）
ＪＳＴ原子力システム研究開発事業（安全基盤技術研究開発）　（2012-2015）過酷事故環境に適用可能なダイヤモンド半導体デバイス　（分担
科学研究費補助金　（B)　（2016-2018）軽元素同位体制御工学の実現に向けたダイヤモンドの物性解明（代表）
科学研究費補助金　（S）（2014-2018）ダイヤモンド量子センシング　慶応大　伊藤教授代表（分担者）
科学研究費補助金　（A）（2014-2017）高エネルギーイオン大気取り出し窓兼位置敏感型検出器としてのダイヤモンド薄膜の研究　量子研　神谷主席代表（分担者）
村田財団研究助成　（2018）（代表）多結晶ダイヤモンド高速基板を用いた高周波デバイス

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