|Lcal conductance measurements of double-layer graphene on SiC substrate,
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, Nanotechnology 20, 445704 (2009).
|Stacking domains of epitaxial few-layer graphene on SiC(0001),
H. Hibino, S. Mizuno, H. Kageshima, M. Nagase, and H. Yamaguchi, Phys. Rev. B 80, 085406 (2009).
|Dynamical observations of crystal growth and phase transition by surface electron microscopy,
H. Hibino, Kenbikyou 44, 149 (2009) (in Japanese).
|Theoretical study of epitaxial graphene growth on SiC(0001) surfaces,
H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, Appl. Phys. Express 2, 065502 (2009).
|Number-of-layers dependence of electronic properties of epitaxial few-layer graphene investigated by photoelectron emission microscopy,
H. Hibino, H. Kageshima, M. Kotsugi, F. Maeda, F.-Z. Guo,and Y. Watanabe, Phys. Rev. B 79, 125437 (2009).
|A lattice model for thermal decoration and step bunching in vicinal surface with sub-monolayer adsorbates,
N. Akutsu, H. Hibino, and T. Yamamoto, e-J. Surf. Sci. Nanotechnol. 7, 39 (2009).