論文リスト
論文リスト 2011
Molecular beam epitaxial growth of graphene and ridge-structure networks of graphene, F. Maeda and H. Hibino, J. Phys. D: Appl. Phys. 44, 435305 (2011). |
Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects, H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, AIP Conf. Proc. 1399, 755 (2011). |
Graphene growth by thermal decomposition of SiC and its characterization by LEEM, H. Hibino, S. Tanabe, and H. Kageshima, Display 17(10), 21 (2011) (in Japanese). |
Carrier transport mechanism in graphene on SiC(0001), S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Phys. Rev. B 84, 115458 (2011). |
Theoretical study on epitaxial graphene growth by Si sublimation from SiC(0001) surface, H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, Jpn. J. Appl. Phys. 50, 095601 (2011). |
Epitaxial growth of graphene on SiC surfaces, S. Tanaka, K. Morita, and H. Hibino, Hyoumenkagaku 32, 381 (2011) (in Japanese). |
Graphene growth from a spin-coated polymer without a reactive gas, S. Suzuki, Y. Takei, K. Furukawa, and H. Hibino, Appl. Phys. Express 4, 065102 (2011). |
Pattern formation of a step induced by a moving linear source, S. Kondo, M. Sato, M. Uwaha, and H. Hibino, Phys. Rev. B 84, 045420 (2011). |
Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC, S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Mater. Res. Soc. Symp. Proc. 1283, mrsf10-1283-b09-02 (2011). |
Graphene, H. Kageshima, H. Hibino, and S. Tanabe, KinouZairyo 31(5), 56 (2011) (in Japanese). |
Characterization of doped single-wall carbon nanotubes by Raman spectroscopy, S. Suzuki and H. Hibino, Carbon 49, 2264 (2011). |
Study of graphene growth by gas-source molecular beam epitaxy using cracked ethanol: influence of gas flow rate on graphitic material deposition, F. Maeda and H. Hibino, Jpn. J. Appl. Phys.50, 06GE12 (2011). |
Theoretical study on magnetoelectric and thermoelectric properties for graphene devices, H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, Jpn. J. Appl. Phys. 50, 070115 (2011). |
Evaluation of few-layer graphene grown by gas-source molecular beam epitaxy using cracked ethanol, F. Maeda and H. Hibino, I. Hirosawa, and Y. Watanabe, e-J. Surf. Sci. Nanotechnol. 9, 58 (2011). |
Observation of bandgap in epitaxial bilayer graphene field effect transistor, S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Jpn. J. Appl. Phys. 50, 04DN04 (2011). |