Publication list 2011

05/01/2015

論文リスト

 

論文リスト 2011

Molecular beam epitaxial growth of graphene and ridge-structure networks of graphene,
F. Maeda and H. Hibino, J. Phys. D: Appl. Phys. 44, 435305 (2011).
Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects,
H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, AIP Conf. Proc. 1399, 755 (2011).
Graphene growth by thermal decomposition of SiC and its characterization by LEEM,
H. Hibino, S. Tanabe, and H. Kageshima, Display 17(10), 21 (2011) (in Japanese).
Carrier transport mechanism in graphene on SiC(0001),
S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Phys. Rev. B 84, 115458 (2011).
Theoretical study on epitaxial graphene growth by Si sublimation from SiC(0001) surface,
H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, Jpn. J. Appl. Phys. 50, 095601 (2011).
Epitaxial growth of graphene on SiC surfaces,
S. Tanaka, K. Morita, and H. Hibino, Hyoumenkagaku 32, 381 (2011) (in Japanese).
Graphene growth from a spin-coated polymer without a reactive gas,
S. Suzuki, Y. Takei, K. Furukawa, and H. Hibino, Appl. Phys. Express 4, 065102 (2011).
Pattern formation of a step induced by a moving linear source,
S. Kondo, M. Sato, M. Uwaha, and H. Hibino, Phys. Rev. B 84, 045420 (2011).
Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC,
S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Mater. Res. Soc. Symp. Proc. 1283, mrsf10-1283-b09-02 (2011).
Graphene,
H. Kageshima, H. Hibino, and S. Tanabe, KinouZairyo 31(5), 56 (2011) (in Japanese).
Characterization of doped single-wall carbon nanotubes by Raman spectroscopy,
S. Suzuki and H. Hibino, Carbon 49, 2264 (2011).
Study of graphene growth by gas-source molecular beam epitaxy using cracked ethanol: influence of gas flow rate on graphitic material deposition,
F. Maeda and H. Hibino, Jpn. J. Appl. Phys.50, 06GE12 (2011).
Theoretical study on magnetoelectric and thermoelectric properties for graphene devices,
H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, Jpn. J. Appl. Phys. 50, 070115 (2011).
Evaluation of few-layer graphene grown by gas-source molecular beam epitaxy using cracked ethanol,
F. Maeda and H. Hibino, I. Hirosawa, and Y. Watanabe, e-J. Surf. Sci. Nanotechnol. 9, 58 (2011).
Observation of bandgap in epitaxial bilayer graphene field effect transistor,
S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Jpn. J. Appl. Phys. 50, 04DN04 (2011).

 

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